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A kind of cadmium telluride solar cell and preparation method thereof

A solar cell, cadmium telluride technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve the problems of low conversion efficiency of solar cells, battery attenuation, complicated preparation process of back contact materials, etc., to improve the collection and transfer capacity. , The effect of reducing the interface loss and excellent long-term stability

Active Publication Date: 2020-07-31
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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Problems solved by technology

[0004] In view of this, the present application provides a cadmium telluride solar cell and a preparation method thereof. The cell uses copper-doped molybdenum oxide as the material of the back contact layer, which forms a good ohmic contact with the light-absorbing layer, and solves the problem of the copper doping process. Problems of battery attenuation caused by diffusion, complex preparation process of back contact materials, and low conversion efficiency of solar cells

Method used

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  • A kind of cadmium telluride solar cell and preparation method thereof
  • A kind of cadmium telluride solar cell and preparation method thereof
  • A kind of cadmium telluride solar cell and preparation method thereof

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preparation example Construction

[0036] The present invention also provides a preparation method of a cadmium telluride solar cell, characterized in that the preparation method comprises the following steps:

[0037] (1) providing a substrate layer, depositing cadmium sulfide on the substrate layer to obtain a window layer;

[0038] (2) Depositing cadmium telluride on the window layer to obtain a light absorbing layer;

[0039] (3) Magnetron sputtering copper-doped molybdenum oxide on the light absorbing layer to obtain a back contact layer;

[0040] (4) Etching the back contact layer with an acid solution to form a back contact layer with a textured structure;

[0041] (5) depositing a back electrode layer on the back contact layer;

[0042] (6) Annealing treatment.

[0043] Preferably, the material of the back electrode layer is metal molybdenum or metal nickel.

[0044] Preferably, the deposition method in step (4) is magnetron sputtering.

[0045] Preferably, the thickness of the back contact layer i...

Embodiment

[0056] Effect of the thickness of textured back electrode on the performance of CdTe thin film battery

[0057] 1. Experimental samples: cadmium telluride thin-film battery sample 1, sample 2, sample 3, sample 4, and sample 5. The preparation methods and parameters of the five samples are the same except for the thickness of the back contact layer;

[0058] 2. Experimental method: use the method described in GB / T 6495.1-1996 for performance testing;

[0059] 3. Experimental results: See Table 2.

[0060] Table 3 The influence of back contact layer thickness on the performance of cadmium telluride thin film battery

[0061]

[0062]

[0063] It can be seen from Table 3 that when the thickness of the back contact layer is 20nm, the charge and discharge efficiency, open circuit voltage, short circuit current and fill factor of the battery all reach the maximum value, and the photoelectric conversion efficiency of the battery is the highest at this time.

[0064] Example

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Abstract

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The solar cell comprises a substrate layer, a window layer, a light absorbing layer, a back contact layer and aback electrode layer in order from bottom to top. The material of the back contact layer is copper doped molybdenum oxide, the material of the back electrode layer is metal molybdenum, and the lightabsorbing layer is cadmium telluride thin film. Cu-doped molybdenum oxide is use as that material of the back contact layer of the solar cell, forming a good ohmic contact with the light absorbing layer, Moreover, the preparation method has the advantages of simple operation, dense structure of the prepared back contact layer film, suitable grain size, small diffusion of metal atoms between the metal layers contained in the back contact layer, high open circuit voltage and filling factor of the cadmium telluride thin film solar cell, excellent initial performance, long-term stability and highconversion efficiency of the cell.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a cadmium telluride solar cell and a preparation method thereof. Background technique [0002] With the increasing scarcity of traditional energy, the development and utilization of new energy has become an important means to solve the energy crisis. Among many new energy sources, including solar energy, ocean energy, geothermal energy, tidal energy, biomass energy, etc., solar energy has become the leader of new energy due to its advantages of cleanliness, pollution-free and abundant reserves. After years of development, the second-generation compound thin-film batteries have attracted the attention of many research institutions and companies, and some of them have been industrialized. As a branch of compound thin-film solar cells, CdTe batteries have great research value and commercial value, and have attracted widespread attention in the industry. CdTe has a ba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0445H01L31/073H01L31/18
CPCH01L31/02245H01L31/0445H01L31/073H01L31/1836Y02E10/543Y02P70/50
Inventor 彭寿马立云潘锦功殷新建赵雷
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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