Method for preparing Cu3SnS4 through binding-single-target sputtering
An absorption layer and sputtering technology, applied in the field of binding single target sputtering to prepare Cu3SnS4 absorption layer, can solve the problems of reducing the number of targets, poor conductivity, discharge of the target, etc. And the effect of uniform composition and fast sputtering speed
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Embodiment 1
[0026] Example 1: Preparation of Cu by sputtering with a bound single target 3 SnS 4 The method of absorbing layer, concrete steps are:
[0027] (1) Substrate pretreatment: The soda-lime glass substrate is ultrasonically cleaned with acetone, absolute ethanol, and deionized water in sequence, and the cleaned substrate is dried with nitrogen gas, and placed on a substrate rack filled with absolute ethanol For use, blow dry the substrate with nitrogen;
[0028] (2) Place the pretreated substrate in step (1) on the sample holder in the magnetron sputtering chamber, install the ternary copper-tin-sulfur target bound to the pure copper target in the magnetron sputtering chamber, adjust the binding The target base distance between the ternary copper-tin-sulfur target of the pure copper target and the substrate in the sputtering chamber is 80 mm; the ternary copper-tin-sulfur target bound to the pure copper target is the ternary copper-tin-sulfur target through The indium material...
Embodiment 2
[0033] Example 2: Preparation of Cu by sputtering with a single bound target 3 SnS 4 The method of absorbing layer, concrete steps are:
[0034] (1) Substrate pretreatment: The soda-lime glass substrate is ultrasonically cleaned with acetone, absolute ethanol, and deionized water in sequence, and the cleaned substrate is dried with nitrogen gas, and placed on a substrate rack filled with absolute ethanol For use, blow dry the substrate with nitrogen;
[0035] (2) Place the pretreated substrate in step (1) on the sample holder in the magnetron sputtering chamber, install the ternary copper-tin-sulfur target bound to the pure copper target in the magnetron sputtering chamber, adjust the binding The target base distance between the ternary copper-tin-sulfur target of the pure copper target and the substrate in the sputtering chamber is 85 mm; the ternary copper-tin-sulfur target bound to the pure copper target is the ternary copper-tin-sulfur target through The indium material...
Embodiment 3
[0042] Example 3: Preparation of Cu by sputtering with a bound single target 3 SnS 4 The method of absorbing layer, concrete steps are:
[0043] (1) Substrate pretreatment: The soda-lime glass substrate is ultrasonically cleaned with acetone, absolute ethanol, and deionized water in sequence, and the cleaned substrate is dried with nitrogen gas, and placed on a substrate rack filled with absolute ethanol For use, blow dry the substrate with nitrogen;
[0044] (2) Place the pretreated substrate in step (1) on the sample holder in the magnetron sputtering chamber, install the ternary copper-tin-sulfur target bound to the pure copper target in the magnetron sputtering chamber, adjust the binding The target base distance between the ternary copper-tin-sulfur target of the pure copper target and the substrate in the sputtering chamber is 90 mm; the ternary copper-tin-sulfur target bound to the pure copper target is the ternary copper-tin-sulfur target through The indium material...
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