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Quantum dot electroluminescent device

An electroluminescent device and quantum dot light-emitting technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve problems that affect the color and luminous efficiency of the device, uneven light emission of the device, and affect carrier recombination. Achieve the effects of avoiding spontaneous charge transfer, uniform luminescence, and improved surface flatness

Active Publication Date: 2020-10-09
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when zinc oxide nanoparticles are used as the electron transport layer, charge transfer easily occurs at the interface with the quantum dot light-emitting layer, which will affect the recombination of carriers, thereby affecting the luminous color and luminous efficiency of the device.
In addition, in quantum dot electroluminescent devices, the electron transport layer is mainly formed on the quantum dot light-emitting layer by inkjet printing. In the process of forming the electron transport layer, it is often found that the film-forming property is poor, resulting in uneven light emission of the device. , poor conductivity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Quantum dot light-emitting diodes, including sequentially adjacent ITO anode, PEDOT:PSS hole injection layer, TFB hole transport layer, blue CdZnSeS quantum dot light-emitting layer, intermediate layer, ZnMgLiO electron transport layer and cathode electrode aluminum. in:

[0023] The middle layer includes polymethyl methacrylate and oleic acid, and the mass ratio of polymethyl methacrylate to oleic acid is 1:1. The intermediate layer is deposited on the blue CdZnSeS quantum dot light-emitting layer by spin coating to form an intermediate layer with a thickness of 5 nm.

[0024] The electron transport layer includes ZnMgLiO nanoparticles and is prepared according to the method described in the specification. The surface of the ZnMgLiO nanoparticles is connected with ligand PEG200, and the surface ligand PEG200 accounts for 30% of the total amount of the ZnMgLiO nanoparticles in terms of mass fraction. The electron transport layer was deposited on the above intermediate...

Embodiment 2

[0027] Quantum dot light-emitting diodes, including sequentially adjacent ITO anode, PEDOT:PSS hole injection layer, TFB hole transport layer, blue CdSe quantum dot light-emitting layer, intermediate layer, ZnMgLiO electron transport layer and cathode electrode aluminum. in:

[0028] The middle layer includes polymethyl methacrylate and oleic acid, and the mass ratio of polymethyl methacrylate to oleic acid is 1.5:1. The intermediate layer is deposited on the blue CdSe quantum dot light-emitting layer by spin coating to form an intermediate layer with a thickness of 6 nm.

[0029] The electron transport layer includes ZnMgLiO nanoparticles and is prepared according to the method described in the specification. The surface of the ZnMgLiO nanoparticles is connected with ligand PEG400, and the surface ligand PEG400 accounts for 38% of the total amount of the ZnMgLiO nanoparticles in terms of mass fraction. The electron transport layer was deposited on the above intermediate lay...

Embodiment 3

[0032] Quantum dot light-emitting diodes, including sequentially adjacent ITO anode, PEDOT:PSS hole injection layer, TFB hole transport layer, blue CdSeS quantum dot light-emitting layer, intermediate layer, ZnMgLiO electron transport layer and cathode electrode aluminum. in:

[0033] The middle layer includes polymethyl methacrylate and oleic acid, and the mass ratio of polymethyl methacrylate to oleic acid is 0.8:1. The intermediate layer is deposited on the blue CdSeS quantum dot light-emitting layer by spin coating to form an intermediate layer with a thickness of 5 nm.

[0034]The electron transport layer includes ZnMgLiO nanoparticles and is prepared according to the method described in the specification. The surface of the ZnMgLiO nanoparticles is connected with ligand PEG600, and the surface ligand PEG600 accounts for 35% of the total amount of the ZnMgLiO nanoparticles in terms of mass fraction. The electron transport layer was deposited on the above intermediate la...

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Abstract

The invention discloses a quantum dot electroluminescent device, which comprises a quantum dot luminescent layer and an electron transport layer, an intermediate layer is arranged between the quantum dot luminescent layer and the electron transport layer, and the material of the intermediate layer includes a band gap not less than 4eV polymers and oleic acid. The intermediate layer enables electrons and holes to effectively recombine in the quantum dot light-emitting layer, which improves the film-forming property of the device, uniform film formation, and improves the luminous performance of the light-emitting device.

Description

technical field [0001] The application belongs to the field of display technology, and in particular relates to a quantum dot electroluminescence device. Background technique [0002] In the field of display technology, quantum dots have excellent properties such as wide color gamut, high color purity, adjustable emission wavelength, and easy synthesis and processing. The luminescent center of quantum dot light-emitting diodes is composed of quantum dots. Its structure is that electrons and holes on both sides converge in the quantum dot layer to form photons, which emit light through the recombination of photons. Quantum dot light-emitting diodes have the advantages of narrow half-peak width, adjustable color, simple preparation process, etc., and have broad application prospects in the field of optoelectronics. [0003] A traditional quantum dot light-emitting diode includes an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50
CPCH10K30/865H10K50/115H10K50/16H10K50/00
Inventor 王红琴方龙王思元张健王允军
Owner SUZHOU XINGSHUO NANOTECH CO LTD