Device and method for preparing tantalum carbide crucible for growing aluminum nitride single crystal

Abstract

The invention discloses a device and new method for preparing a tantalum carbide crucible for growing an aluminum nitride single crystal. The device comprises high-purity tantalum carbide powder, a binder, a sheath mold, a liquid pressure medium, a closed high-pressure container, the crucible, a lathe and a high-temperature heating furnace. The new method comprises the steps that the high-purity tantalum carbide powder and the binder are evenly mixed, then dried and loaded into a sheath mold material; the sheath mold is loaded into the closed high-pressure container to be subjected to high-pressure pressing into a tantalum carbide crucible model, wherein the liquid pressure medium is fully poured into the closed high-pressure container; the tantalum carbide crucible model is put into the crucible and then put into the high-temperature heating furnace to be subjected to high-temperature sintering; the lathe is utilized to conduct turning on the tantalum carbide crucible model, and thusthe tantalum carbide crucible with the proper size is obtained; and the tantalum carbide crucible is subjected to high-temperature shaping through the high-temperature heating furnace, and thus the tantalum carbide crucible for growing the aluminum nitride single crystal is obtained. According to the device and new method for preparing the tantalum carbide crucible for growing the aluminum nitridesingle crystal, the service life of the tantalum carbide crucible can be prolonged, the crystal quality of the grown aluminum nitride single crystal is improved, and the usable area of the signal crystal is increased; and the method is simple, and thus the aluminum nitride single crystal can be prepared at the low cost.

Description

technical field [0001] The invention relates to a semiconductor manufacturing device and process, in particular to a device and a new preparation method for preparing a tantalum carbide crucible for growing aluminum nitride single crystals. Background technique [0002] The bandgap width of the third-generation semiconductor materials is generally greater than 3.0 electron volts, so it is also called a wide bandgap semiconductor, and aluminum nitride materials belong to it. It has high thermal conductivity, high breakdown field strength, and high saturation electron drift rate. Excellent properties such as high bonding energy and high bonding energy have great application prospects in high-temperature, high-frequency, high-power and radiation-resistant devices. The research and development of aluminum nitride single crystal materials has become a hot spot in the semiconductor field. Currently, the method of physical vapor transport (PVT) is mainly used to prepare aluminum ni...

AI Technical Summary

Problems solved by technology

[0005] (1) The tantalum carbide component only exists in a small depth range on the surface of the crucible, and the interior is still only a single carbon or tantalum component, which cannot withstand high temperatures above 2000 ° C, reducing the service life of the crucible

[0006] (2) Whether it is to coat the tantalum carbide coating on the surface of the graphite crucible or anneal and carbonize the tantalum crucible, it needs to be carried out in a nitrogen atmosphere. Nitrogen gas easily reacts with tantalum to form tantalum nitride at high temperature, and tantalum nitride easily reacts with aluminum vapor. Causes the crucible to crack and ultimately reduces the useful life of the crucible

[0007] (3) After raising the temperature, due to the complex composition in the system, it is easy to introduce carbon, oxygen and other impurities in the material transportation process, so that the aluminum nitride contains a large amount of impurities, which affects the growth of the aluminum nitride single crystal. quality

[0008] It can be seen that the traditional method of making a crucible for growing aluminum nitride still has the problems of reducing the service life of the crucible and affecting the quality of growing aluminum nitride, so there is an urgent need for a new method for preparing a tantalum carbide crucible for growing aluminum nitride single crystals. method

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