A vertical cavity surface emitting silicon substrate GaN laser based on a dielectric Bragg mirror and a preparation method thereof

Abstract

The invention discloses a vertical cavity surface emitting silicon substrate GaN laser based on a dielectric Bragg mirror and a preparation method thereof, Using deep silicon etching technology, the silicon substrate on the bottom of the device is stripped completely, and then the AlN layer, AlGaN layer and part of n-GaN layer are etched off from the back by inductively coupled plasma reactive ionetching technology. GaN lay to regulate that length of the vertical resonant microcavity; The mirrors at the top and bottom of the vertical resonant microcavity are realized by electron beam evaporation technology to deposit dielectric Bragg mirrors. The insulating insulation layer and the top mirror located below the p-type electrode bonding region are simultaneously accomplished using a one-step electron beam evaporation process. During the fabrication process, tunable wavelength and controllable laser direction can be obtained by adjusting the related parameters to achieve the laser wavelength and emission direction selection, so as to obtain an electrically pumped GaN laser. The vertical cavity surface emitting silicon substrate GaN laser based on the dielectric Bragg mirror has low cost, simple preparation process and can be used in a plurality of fields.

Description

technical field [0001] The invention relates to the field of information materials and devices, in particular to a vertical cavity surface emitting silicon substrate GaN laser based on a dielectric Bragg reflector and a preparation method thereof. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is a new type of semiconductor laser with great development prospects, and it is a major breakthrough in the integration of photonic devices. The vertical cavity surface emitting laser is different from the conventional end surface emitting laser. The end surface emitting laser emits light sideways, while the output light of the vertical cavity surface emitting laser is perpendicular to the surface of the resonant cavity. This difference in the orientation of the optical cavity makes the performance of the vertical cavity surface emitting laser much better than that of the conventional end surface emitting laser. The vertical emission of the laser makes i...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a vertical cavity surface emitting silicon substrate GaN laser based on a dielectric Bragg reflector and its preparation method, which can solve the semiconductor Bragg problem that the existing GaN vertical cavity surface emitting laser is usually obtained by growing. The mirror process is complex, time-consuming and difficult to obtain high-quality mirrors; silicon substrate nitride wafers have a great cost advantage over the sapphire substrates commonly used in existing GaN lasers, are easy to process, and are more conducive to large-scale mass production

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