195results about How to "The process is simple and mature" patented technology

The invention provides a method for extracting heavy liquefaction oil and an intermediate-phase bitumen matter from coal liquefaction residuals and application thereof. The method comprises the following steps of: adding coal liquefaction residual powder and an extraction solvent to a stirring kettle together for extraction to obtain extraction liquid and extraction residues; carrying out solid-liquid separation on the obtained extraction liquid and extraction residues; carrying out steam stripping on the obtained extraction residues, and recovering an organic phase after oil-water separation; mixing the extraction liquid with the organic phase, and then delivering into a solvent recovery unit; recovering the extraction solvent for recycling use or being returned to a liquefaction productprocessing unit by using a distillation method and/or an evaporation method, wherein residuals obtained after the extraction solvent is recovered are liquefaction residual extractives; delivering theobtained liquefaction residual extractives into a heat treatment unit, and separating the heavy liquefaction oil from the intermediate-phase bitumen matter by using a heating dry distillation method;and adding the obtained heavy liquefaction oil and other recycling solvents in a direct liquefaction process to a coal liquefaction solvent hydrogenation unit together.

The invention provides a central frequency adjustable substrate integrated waveguide filter and a manufacturing method thereof. According to an electric adjustment method of the waveguide resonant frequency, tuning conductive poles loaded in a filter resonant cavity, The resonant frequency of the resonant cavity is disturbed, a switch composed of a conductive film bridge is formed on the top metal layer to gate the tuning conductive poles, and the central frequency of the substrate integrated waveguide filter is adjusted. The application range and adjustability of the filter are improved greatly.

The invention relates to a macromolecular material and a preparation method thereof, in particular to a PBT (polybutylece terephthalate) composite material and a preparation method thereof. The PBT composite material comprises the following components in percentage by weight: 20-25 percent of polybutylene terephthalate, 6-20 percent of bromine containing flame retardant, 5-15 percent of phosphorus and nitrogen containing flame retardant, 5-15 percent of inorganic flame retardant, 20-40 percent of glass fiber, 2-8 percent of toughening agent, 0.2-0.4 percent of antioxidant and 0.3-2 percent of lubricating dispersant. The preparation method comprises the following steps of weighing the components in the percentage by weight; putting plastic and adjuvant into a high-speed mixing machine, mixing the plastic and the adjuvant for 2-5 minutes and discharging a mixture; controlling a double-screw extruder to extrude and granulate the mixture; and adding glass fiber in the extruding process to obtain the PBT composite material. The flame-retardant property and the strength of the PBT composite material are obviously improved; using requirements of more occasions can be met; the PBT composite material has high application value and good market prospect; and the used raw materials are the conventional products in the field of engineering plastics and are low in cost.

The invention discloses a leadless piezoelectric ceramics and a corresponding preparation method. The chemical formula of the leadless piezoelectric ceramics is as follows: 0.94Bi0.5Na0.5TiO3-(0.06-x)BaTiO3-xK0.5Na0.5NbO3, wherein, x is larger than 0 and less than 0.06. The leadless piezoelectric ceramics is manufactured through a solid state reaction method, and the structure of the ceramics is similar to a tripartite-orthogonal morphotropic phase boundary and has better ferroelectric and piezoelectric capability, and a residual polarization is about 30 Mu C/cm<2> and a saturation polarization is about 40 Mu C/cm<2> without depending on the contents, and the coercive field alters from 4.2 to 5.5kV/mm and increases as the increase of parameter x; and a piezoelectric coefficient d33 and an electro-mechanical coupling factor Kp decrease as the increase of parameter x, d33 alters from 86 to 118pC/N and kp alters from 0.26 to 0.29. A depolarization temperature (T<d>) increases from 108 to 146 DEG C as the increase of KNN.

The invention discloses a dielectric nano-brick array structure and the application thereof as a high-reflection film and a high-permeability film. The dielectric nano-brick array structure comprisesa substrate and a dielectric nano-brick array on the substrate. The dielectric nano-brick array is formed by periodically arranging dielectric nano-bricks and the dielectric nano-bricks are in a regular quadrangular prism shape. The bottom surfaces of the dielectric nano-bricks are square, wherein the length, the width and the height of the dielectric nano-bricks are sized in sub-wavelength scale.When the dielectric nano-brick array structure is used as a high-reflectivity film, the structural parameters of the dielectric nano-brick array structure are optimized. In this way, the Mie resonance can be generated when the s-wave and the p-wave are incident at a working wavelength. When the dielectric nano-brick array structure is used as a high-permeability film, the structural parameters ofthe dielectric nanometer brick array structure are optimized. In this way, the equivalent refractive index of a mixed layer is between the refractive index of a medium around the mixed layer and therefractive index of the substrate. According to the technical scheme of the invention, the high-reflection film and the high-permeability film, based on the dielectric nano-brick array structure, arehigh in working efficiency in the whole communication wave band.

The invention discloses sulfonated fluorene-containing polyether sulphone for a proton exchange membrane of an all-vanadium flow battery and a preparation method and an application thereof. The preparation method of the invention adopts fluorene-containing bisphenol with different structures and different dihalide monomers to perform copolymerization in non-proton polar solvent under the action of potassium carbonate catalyst, then uses chlorosulfonic acid to sulfonate the obtained polymer and finally adjusts the dosage of chlorosulfonic acid to prepare a kind of sulfonated fluorene-containing polyether sulphones with different degrees of sulfonation. The polymer can be directly casted to prepare single component film, mixed with other polymers to prepare composite film, mixed with inorganic matter to prepare doped film or combined with other ion exchange films to prepare multi-layer film. The films are characterized by low vanadium ion permeability, low water absorption, high proton conductivity, good stability, low cost and the like, thus being applicable to being used as proton exchange films of the all-vanadium flow battery.

The invention provides a nanometer silicon dioxide modified sulfonate oil-displacing agent and a preparation method thereof, which belong to synthesis of a chemical oil-displacing agent in tertiary recovery by a simple and convenient and easily industrialized method. The method comprises the following steps that: firstly, naphthene base crude oil is sulfonated and neutralized at a temperature of between 10 and 80 DEG C to obtain sulfonate; secondly, the sulfonate is subjected to graft modification by nano-grade silicon dioxide; and finally, the nanometer modified sulfonate oil-displacing agent is obtained. The nanometer silicon dioxide modified sulfonate oil-displacing agent comprises 60 to 90 portions of naphthene base sulfonate and 10 to 40 portions of nanometer silicon dioxide by mass portion. The oil-displacing agent can be used for an oil-displacing experiment; when mass fraction of dosage of the oil-displacing agent is 0.3, the oil-displacing agent can reduce the tensile force of oil-water boundary to 5*10mN.m to effectively reduce adhesive force of residual oil, so that the residual oil is easy to deform and separate; meanwhile, the capillary resistance is reduced, so that the residual oil drop is easy to aggregate to form an oil wall and the oil recovery efficiency is improved. The oil-displacing agent has low price, simple synthesis process and convenient popularization and application.

The invention discloses a high-intensity high-damping deforming magnesium alloy with rear earth yttrium, which is characterized by comprising the following components by weight percent: 2.9-3.1 percent of Al, 0.9-1.1 percent of Zn, 0.5-2 percent of Y, 0.29-0.31 percent of Mn and the rest of Mg and unavoidable impurities. The high-intensity high-damping deforming magnesium alloy with rear earth yttrium can greatly increase the mechanical property and the damping performance of the high-intensity AZ series deforming magnesium alloy, successfully solve the conflict of the mechanical property andthe damping performance of the magnesium alloy and satisfy the actual requirements for a high-intensity high-damping light-weight material in the fields of very high-speed trains, automobiles, aerospace, national defense war industry, and the like, moreover, the magnesium alloy material has lower cost, and a technical device is the normal universal device with strong portability and easy operation.

The invention provides a plastic working process for improving the damping property of a high-strength wrought magnesium alloy. The plastic working process includes the following steps: plastic deformation by extrusion: a magnesium alloy ingot is extruded on an extruder, the technical parameters are that the extrusion temperature is 350-400 DEG C, the extrusion ratio is 9-15, the extrusion speed is 2-8m/min and the speed is constant; upsetting type forging treatment: the wrought magnesium alloy treated by extrusion and plastic deformation is upset after keeping the temperature of 380-400 DEG C for 1-2 hours, the temperature of the magnesium alloy ingot at upsetting is 315-375 DEG C, the upset rate is 30%-40%, and the strain rate of upsetting is 0.001-0.01/s. The plastic working process of the invention can greatly improve the damping property of the high strength wrought magnesium alloy and guarantee good mechanical property simultaneously, and successfully solves the contradiction between the strength and the damping property of the magnesium alloy. The wrought magnesium alloy treated by the plastic working process has wide application fields, and can satisfy the actual requirement for high-strength, high-damping and light-weight materials in the fields of high speed train, automobile, aeronautics and astronautics, national defense, military industry, etc. In addition, the process equipment used in the plastic working process is the conventional universal equipment which is low in cost.

Vitamin K2 submicron emulsion is prepared from, by weight, 0.0005-1% of vitamin K2, 1.0-10% of oil, 0.1-1.2% of phospholipid, 0.5-2.3% of emulgator, 0.5-3.0% of antifreezing agent and water according to the total weight of the vitamin K2 submicron, wherein emulgators except phospholipid can serve as the emulgator in the emulsion. The vitamin K2 submicron emulsion is good in sterilization stability and freeze-thaw stability, and the expected shelf life can reach two years or more.

The invention discloses a terahertz dual-band elimination filter. The terahertz dual-frequency band elimination filter comprises N * N identical square units which are periodically arranged on a planeperpendicular to a wave incident direction, and no interval exists between the units; each unit comprises a metal resonance layer and a substrate; and each metal resonance layer comprises a first semi-metal ring, a second semi-metal ring, a metal ring, a first metal strip, a second metal strip and a metal circle; the metal circle is arranged in the center of the metal ring, the first metal stripand the second metal strip are respectively arranged right above and right below the metal ring, the first semi-metal ring and the second semi-metal ring are respectively arranged right above and right below the first metal strip and the second metal strip, and the first semi-metal ring and the second semi-metal ring form a circular ring with two gaps. The dual-stop-band characteristic of the filter in the terahertz wave band is achieved, and the filter has the advantages of being low in loss, simple in structure and low in material and process cost.

The invention discloses a recombinant trapped wave frequency band ultra wide band-pass filter based on a cross resonator. The recombinant trapped wave frequency band ultra wide band-pass filter comprises a cross resonator, and parallel coupling feeder line structures, wherein three stub lines of the cross resonator are connected with capacitors to the ground. Micro band line design with distribution parameters is adopted. The recombinant trapped wave frequency band ultra wide band-pass filter has the advantages of light weight, small size, high reliability, excellent property, good temperature stability, large-scale production, low cost and the like, and is particularly applicable to ultra wide band communication systems, digital radar, single soldier satellite movement, military and civil multimode and multi-channel communication system terminals in different working environments, and corresponding systems with harsh requirements on weight, property and reliability.

The invention relates to the field of functional films, in particular to a transparent lacquer protective film and application thereof. In order to solve the problem that the current lacquer protective film has poor impact resistance and large water contact angle, the invention provides a transparent lacquer protective film and application thereof. The transparent lacquer protective film providedby the invention comprises a self-healing layer, a substrate layer and a pressure-sensitive adhesive layer. The raw materials of the self-healing layer are composed of the following materials (by weight): 55-80 parts of polyol resin, 3-18 parts of a crosslinking agent, 5-32 parts of inorganic nanoparticles, 0.2-3 parts of a catalyst, and 0.5-3 parts of an ultraviolet light absorber. The prepared lacquer protective film not only has high light transmittance and self-repairing property, but also has excellent performances such as high impact performance and low water contact angle. The lacquer protective film provided by the invention has simple preparation process, is easy to operate, and is convenient for industrial production.

The process of extracting and separating protein from defatted cotton seed residue includes the following steps: alkali dissolving defatted cotton seed residue; first separation to obtain solid phaseand supernatant liquid; drying solid phase to obtain feed protein; and acid precipitation, second separation, neutralization, homogenization, sterilization and spray drying of the supernatant liquid to obtain protein. It has the advantages of reasonable apparatus layout, high quality of protein product, high protein extracting rate and no need of eliminating gossypol.

The invention discloses a method for manufacturing glass substrate all buried strip-type optical waveguide stack. The glass substrate all buried strip-type optical waveguide stack is formed by manufacturing a plurality of layers of buried optical waveguides on a glass substrate in sequence through an ion exchange and electric field assisted ion diffusion technology. The strip-type optical waveguide stack which is manufactured by the method has the characteristics of simple and mature process, simple integration and low loss; and the shape of a core part of the obtained optical waveguide is symmetrical.

The invention provides a semiconductor device and a manufacturing method thereof, and an electronic apparatus. The manufacturing method comprises the following steps of providing a device wafer and forming a first bonding interface layer on a right side of the device wafer; providing a support wafer and forming a second bonding interface layer on a surface of the support wafer, wherein the support wafer executes hydrogen ion implantation; forming a hydrogen ion implantation layer in an area, wherein a predetermined depth is arranged between the area and the second bonding interface layer; carrying out a bonding technology and making the first bonding interface layer of the device wafer be connected to the second bonding interface layer of the support wafer; carrying out thinning on a back side of the device wafer; executing annealing processing and realizing hydrogen embrittlement fragmentation de-bonding so as to peel most of the support wafer; and removing the residual support wafer. According to the manufacturing method in the invention, other bonding mediums are not needed; cost is low and efficiency is high; the process is mature and simple; by using a de-bonding method, uniformity is good; other tools are not needed; the process is simple and the operability is high.