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A method of adding a sintering aid to prepare a flexible thermoelectric thick film material with excellent electrical transport properties

A technology of thermoelectric materials and sintering aids, which is applied in the manufacture/processing of thermoelectric devices, etc., can solve the problems of not being able to fully meet the requirements of thermoelectric refrigeration devices, the degradation of thermoelectric thick film electrical properties, and the hindrance of carrier transport. The method is simple and controllable, the electrical transport performance is improved, and the preparation cycle is short

Active Publication Date: 2020-12-29
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermoelectric paste for printing must be added with polymer resin to ensure the stability and printability of the paste, and the decomposition and volatilization of organic matter brought about by the subsequent heat treatment process will leave defects such as holes and cracks inside the thick film. The organic matter remaining in the thermoelectric thick film will hinder the carrier transport, resulting in the deterioration of the electrical properties of the thermoelectric thick film
Around this problem, relevant researchers have performed cold isostatic pressing on the heat-treated thick film or hot-pressing it during the heat treatment process to improve its electrical transport performance, but it still cannot fully meet the requirements of thermoelectric cooling devices.

Method used

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  • A method of adding a sintering aid to prepare a flexible thermoelectric thick film material with excellent electrical transport properties
  • A method of adding a sintering aid to prepare a flexible thermoelectric thick film material with excellent electrical transport properties
  • A method of adding a sintering aid to prepare a flexible thermoelectric thick film material with excellent electrical transport properties

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Add 0.3wt% Sn 42 Bi 58 Preparation of Bi by sintering aid 0.5 Sb 1.5 Te 3 Based thermoelectric composite thick film, comprising the following steps:

[0031] 1) the p-type Bi 0.5 Sb 1.5 Te 3 The ingot is broken, ground, and passed through a 120-mesh sieve to obtain a ready-to-use powder with a particle size of less than 120 μm;

[0032] 2) Calculate and weigh the above Bi according to the mass percentage 0.5 Sb 1.5 Te 3 Powder 9.97g and sintering aid Sn 42 Bi 58 Add 0.03g of alloy powder into a high-energy ball mill tank with a ball-to-material ratio of 55:1, add 50ml of absolute ethanol as a ball mill medium, and put Ar atmosphere protection after vacuuming. The ball milling process parameters are ball milling speed 200r / min, ball milling time 24h;

[0033] 3) The ball-milled powder was centrifuged at a speed of 4000r / min for 10min, the lower layer of slurry was removed, and vacuum-dried in a vacuum oven at 60°C for 2h to obtain a powder containing 0.3wt% ...

Embodiment 2

[0039] Add 1.5wt% Sn 42 Bi 58 Preparation of Bi by sintering aid 0.5 Sb 1.5 Te 3 Based thermoelectric composite thick film, comprising the following steps:

[0040] p-type Bi 0.5 Sb 1.5 Te 3 The ingot is broken, ground, and passed through a 120-mesh sieve to obtain a ready-to-use powder with a particle size of less than 120 μm;

[0041] Calculate and weigh the above Bi according to the mass percentage 0.5 Sb 1.5 Te 3 Powder 9.85g and sintering aid Sn 42 Bi 58 Add 0.15g of alloy powder into a high-energy ball mill tank with a ball-to-material ratio of 55:1, add 50ml of absolute ethanol as a ball mill medium, and put Ar atmosphere protection after vacuuming. The ball milling process parameters are ball milling speed 200r / min, ball milling time 24h;

[0042] The ball-milled powder was centrifuged at a speed of 4000r / min for 10min, the lower layer of slurry was removed, and vacuum-dried in a vacuum oven at 60°C for 2h to obtain a powder containing 1.5wt% Sn 42 Bi 58...

Embodiment 3

[0048] Preparation of Bi by adding 1wt% bismuth telluride nanowire sintering aid 0.5 Sb 1.5 Te 3 Based thermoelectric composite thick film, comprising the following steps:

[0049] 1) Preparation of Bi 2 Te 3 Nanowires

[0050] Weigh 0.1g SDS, 0.0183g Na 2 TeO 3 and 0.0150 g NaBH 4 , dissolved in 100mL water successively under magnetic stirring to form a homogeneous solution. Under the condition of ice-water bath, Na 2 TeO 3 and NaBH 4 The solution was added dropwise into the SDS solution and stirred continuously, the solution gradually turned black, and a dispersion of Te crystal seeds was obtained;

[0051] Mix 1g PVP K90 and 0.25g Na 2 TeO 3 Dissolve in 70mL of water, obtain a clear solution under magnetic stirring, transfer it with 10mL Te seed crystal dispersion and 1.5mL hydrazine hydrate solution into a stainless steel reaction kettle lined with polytetrafluoroethylene, and place it in a high-temperature furnace at 145°C to keep warm After 72 hours, the rea...

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Abstract

The invention relates to a method for preparing a flexible thermoelectric thick-film material with excellent electrical transport performance by adding a sintering aid. The preparation method comprises the following steps: 1) uniformly mixing the thermoelectric material powder and the sintering aid to obtain a mixed powder; 2) Dissolving the polymer resin in an appropriate solvent to obtain a solution of the polymer resin; 3) uniformly mixing the mixed powder with the polymer resin solution to prepare a thermoelectric paste; 4) printing the thermoelectric paste on the 5) leveling the wet film of the slurry, drying and sintering. The invention has the advantages of: the sintering aid used is environmentally friendly and easy to obtain, and the price is low; the electrical transport performance of the flexible thermoelectric thick film material can be significantly improved by adding the sintering aid; the preparation method of the thermoelectric thick film material is simple and controllable, and the preparation cycle is short , suitable for industrial production, and is expected to promote the development of in-plane flexible thermoelectric devices.

Description

technical field [0001] The invention relates to a method for preparing a flexible thermoelectric thick film material, in particular to a method for preparing a flexible thermoelectric thick film material with excellent electrical transport performance by adding a sintering aid. Background technique [0002] Thermoelectric materials are new energy materials that can realize direct conversion of thermal energy and electrical energy. They have important applications in industrial waste heat thermoelectric power generation, solar thermoelectric-photoelectric hybrid power generation, deep space / deep sea power, small temperature difference power generation, and thermoelectric refrigeration. As microelectronic integrated devices are widely used in high-power processors and terminal equipment, the heat dissipation of high-power-density hotspots urgently requires the development of efficient thermal management solutions. Thermoelectric refrigeration technology based on the Peltier ef...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H10N10/01
CPCH10N10/01
Inventor 赵文俞田烨聂晓蕾张清杰朱婉婷魏平孙志刚李鹏方文兵
Owner WUHAN UNIV OF TECH
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