A flexible silicon-based thin film solar cell and preparation method thereof
A technology of solar cells and silicon-based thin films, which is applied in the field of solar cells, can solve problems such as complex preparation processes, restrictions on the development of integration of thin-film cells, and high requirements on process conditions, so as to reduce production time, save raw materials, and reduce costs. Effect
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Embodiment 1
[0027] Attached below figure 1 , attached figure 2 , attached image 3 , the present invention will be further described by embodiment. The preparation process of the novel battery of embodiment 1 is as follows:
[0028] 1. The purchased 30 micron thick flaky stainless steel substrate 1 is cleaned, the cleaning method is ultrasonic cleaning, and the cleaning solution is a neutral solution (mainly composed of alkali, emulsifier is used to remove oil stains, and the op-10 of Sinopharm is used) , measure 8-10mL, then weigh potassium carbonate and KOH, the concentration of potassium carbonate is 1-5mol / L, 3mol / L here, and the concentration of KOH is also 1-5mol / L, 3mol / L here), The solvent is prepared with deionized water, the solution cleaning time is 30 minutes, and then cleaned with deionized water for 30 minutes;
[0029] 2. Prepare a high-temperature silver layer 2 with a thickness of 250nm at 255°C by thermal evaporation on the cleaned stainless steel substrate; at room...
Embodiment 2
[0034] 1. The purchased 30 micron thick flaky stainless steel substrate 1 is cleaned, the cleaning method is ultrasonic cleaning, and the cleaning solution is a neutral solution (mainly composed of alkali, emulsifier is used to remove oil stains, and the op-10 of Sinopharm is used) , measure 8-10mL, then weigh potassium carbonate and KOH, the concentration of potassium carbonate is 1-5mol / L, here 3mol / L, the concentration of KOH is also 1-5mol / L, here 3mol / L), The solvent is prepared with deionized water, the solution cleaning time is 30 minutes, and then cleaned with deionized water for 30 minutes;
[0035]2. Prepare a high-temperature silver layer 2 with a thickness of 250nm at 255°C by thermal evaporation on the cleaned stainless steel substrate; at room temperature, use an aluminum-doped zinc oxide target to prepare an AZO layer by magnetron sputtering 3. The thickness is 60nm; then use plasma-enhanced chemical vapor deposition of silicon film: n-type silicon film, doped w...
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