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Efficient terahertz emission chip based on electron spin and manufacturing method thereof

An electron spin, emission chip technology, applied in radiation control devices and other directions, can solve the problems of large and complex external auxiliary equipment, large external magnetic field, difficult miniaturization production, etc., to achieve integration and miniaturization applications, conversion efficiency High, wide spectral width effects

Active Publication Date: 2019-02-01
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] (1) In the current photonics method to generate THz radiation technology, the external auxiliary equipment of the photoconductive antenna is complicated, and it is difficult to realize the miniaturization of the terahertz transmitter; the nonlinear frequency mixing and the vacuum electronic wave tube are also difficult to realize the miniaturization production; Cascaded lasers have low emission efficiency and need to work at extremely low temperatures; the zinc telluride crystal (ZnTe) used in the optical rectification effect is expensive and the preparation process is complicated
[0009] (2) The ferromagnetic thin film THz radiation sources that exist at this stage need to be applied with a constant magnetic field, and the external magnetic field is large in size, which is not conducive to the application of chip-level THz radiation sources
[0011] The difficulty lies in: it is difficult to not only reduce the cost of terahertz radiation sources (photoconductive antenna, zinc telluride crystal (ZnTe)) and simplify the preparation process through the current preparation process, but also solve technical problems such as large and complex external auxiliary equipment at the same time

Method used

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  • Efficient terahertz emission chip based on electron spin and manufacturing method thereof
  • Efficient terahertz emission chip based on electron spin and manufacturing method thereof
  • Efficient terahertz emission chip based on electron spin and manufacturing method thereof

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Embodiment 1

[0065] see Figure 1~3 , The terahertz wave transmitter is composed of a substrate and a magnetic multilayer metal film plated on the substrate. From the substrate to the top: 107 is an antiferromagnetic pinning layer (2nm), 106 is a pinned layer (2nm), 105 is an oxide barrier layer (2nm), 104 is a second metal layer (Pt, 4nm) , 103 ferromagnetic layer (CoFeB, 4nm), 102 first metal layer (W, 4nm), 101 cover layer (MgO, 2nm). The ferromagnetic layer needs to have an in-plane magnetization direction. 104 the second metal layer, 103 the ferromagnetic layer, and 102 the first metal layer need to form a heterojunction. The given thickness is a commonly used thickness, and changing different thicknesses can greatly change the strength of the terahertz wave emission signal. Use commonly used physical and chemical coating methods, such as magnetron sputtering, chemical vapor deposition, molecular beam epitaxy, etc.

[0066] image 3 A test scheme for the terahertz transmitter sig...

Embodiment 2

[0068] This embodiment is the same as the first embodiment, except that the three-layer structure of 104 second metal layer, 103 ferromagnetic layer, and 102 first metal layer is replaced by a single layer 103 ferromagnetic layer. The specific structure is as follows: substrate / 107 antiferromagnetic pinning layer / 106 pinned layer / 105 oxide barrier layer / 103 ferromagnetic layer / 101 covering layer. Or 107 antiferromagnetic pinned layer / 106 pinned layer / 105 barrier layer / 104 second metal layer / 103 ferromagnetic layer / 101 capping layer. Figure 3-4 The test scheme of the terahertz transmitting chip signal is given.

Embodiment 3

[0070] This embodiment is the same as Embodiment 1, and the special feature is that the three-layer structure of 104 second metal layer, 103 ferromagnetic layer, and 102 first metal layer is replaced by a double-layer heterojunction of 104 second metal layer and 103 ferromagnetic layer . The specific structure is as follows: substrate / 107 antiferromagnetic pinning layer / 106 pinning layer / 105 oxide barrier layer / 104 metal layer (Pt, Ru, etc.) / 103 ferromagnetic layer (CoFeB, etc.) / 101 covering layer. Figure 3-4 The test scheme of the terahertz transmitting chip signal is given. Figure 5 Terahertz emission signal for the test chip. It can be seen that the transmitted signal has the advantages of high energy conversion efficiency and wide spectrum width.

[0071] The present invention will be further described below in conjunction with effect.

[0072] According to the experiments and theoretical calculations of Kampfrath et al., the emission efficiency of terahertz waves is...

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Abstract

The present invention belongs to the technical field of photoelectric function devices, and discloses an efficient terahertz emission chip based on electron spin and a manufacturing method thereof. Through adoption of physical or chemical coating method, a substrate is plated with multi-layer magnetic metal thin films and multi-layer nonmagnetic metal thin films in order to form a complex film structure; through design of the complex film structure, the inverse spin Hall effect is employed to generate high terahertz radiation; and a ferromagnetic pinning layer is designed in the complex film structure to replace an external magnetic field so as to reduce the size of the terahertz radiation device. The efficient terahertz emission chip based on electron spin and the manufacturing method thereof can achieve preparation of the terahertz emission chip, different materials and thin film thicknesses in the complex film structure are controlled to achieve regulation and control of the terahertz radiation efficiency, the bandwidth and the polarization state; the electromagnetic wave frequency range radiated by the terahertz emission chip is in a range of 0.1THz-10THz, the pulse energy of the terahertz emission chip is micro coke level so as to completely meet the application demands of the terahertz spectrum and the terahertz imaging.

Description

technical field [0001] The invention belongs to the technical field of photoelectric functional devices, in particular to an electron spin-based high-efficiency terahertz emission chip and a manufacturing method thereof. Background technique [0002] At present, the existing technologies commonly used in the industry are as follows: [0003] In the 1980s, the birth of terahertz (THz) technology based on ultrafast electronic methods aroused widespread interest among scientists. Especially after the development of technologies such as terahertz spectroscopy and imaging, terahertz science and technology have shown great application prospects. However, terahertz waves have only received widespread attention in the past ten years, so various photonic devices in the terahertz band are still lacking, especially miniaturized, chip-level THz emitters. [0004] Existing terahertz transmitters mainly include: quantum cascade THz lasers, THz photoconductive antennas, nonlinear frequen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144
CPCH01L27/144
Inventor 金钻明林贤马国宏张顺浓李炬赓
Owner SHANGHAI UNIV