A light-emitting diode epitaxial wafer and its manufacturing method

Abstract

The invention discloses an LED epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The manufacturing method comprises that a substrate is provided; a low-temperature buffer layer, a high-temperature buffer layer, an N type layer, a multi-quantum well layer and an electron barrier layer are grown on the substrate successively; and a high temperature P type layer is grown on the electron barrier layer, the high temperature P type layer comprises first and second sub-layers grown successively, the first sub-layer is doped with Mg and In, the second sub-layer is doped with Mg, the first sub-layer is grown in the low-temperature low-pressure condition, and the second sub-layer is grown on the first sub-layer in the high-temperature high-pressure growing condition. According to the manufacturing method, damage of the high-temperature P type layer on the multi-quantum well is reduced, sufficient cavities are provided, and the light emitting efficiency of an LED is ensured.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a light emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a semiconductor electronic component that can emit light. As a new type of high-efficiency, environmentally friendly, green solid-state lighting source, it is rapidly and widely used, such as traffic signal lights, automotive interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, a multiple quantum well layer, an electron barrier layer and High temperature P-type layer. The high temperature P-type layer is doped with Mg to provide holes. In order to obtain a certain amount of...

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Problems solved by technology

[0005] Growing a high-temperature P-type layer in a high-temperature environment will destroy the multi-quantum well layer, reduce the crystal quality of the multi-quantum well layer, and affect the luminous efficiency of the LED. Increasing the doping concentration of Mg in the high-temperature P-type layer will lead to high-temperature P The content of Mg in the type layer is high, which causes the self-compensation effect, which will lead to a decrease in the concentration of holes

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