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Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer

A technology of organic film and composition, which is applied in semiconductor/solid-state device manufacturing, organic chemistry, and photosensitive materials used in optomechanical equipment, etc. It can solve the problems of film thickness variation, unclear embedding characteristics or planarization characteristics, etc., to achieve Both embedding and planarization characteristics, high embedding and planarization characteristics, and high heat resistance

Active Publication Date: 2019-03-05
SHIN ETSU CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with regard to these materials, there are no examples regarding substituents having a triple bond on the nitrogen atom, for formation of cured film in inert gas, film thickness variation due to thermal decomposition under high temperature conditions, intercalation characteristics or flatness properties are not yet known

Method used

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  • Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer
  • Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer
  • Composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, patterning process, and polymer

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0114] [Preparation method of polymer]

[0115] As means for obtaining the polymer of the present invention, it can be obtained by the polycondensation reaction of the nitrogen-containing compound shown below with an aldehyde or a ketone. AR1, AR2, AR3, Y, R1 and R2 in the following formulas are as described above.

[0116] [chemical formula 16]

[0117]

[0118] The nitrogen-containing compound, aldehyde compound, and ketone compound used in these polycondensation reactions may be used alone or in combination of two or more. An aldehyde compound and a ketone compound may be used in combination. These can be appropriately selected and combined according to the required characteristics.

[0119] As the nitrogen-containing compound used in the polycondensation reaction, the following nitrogen-containing compounds can be specifically exemplified. Among them, indenocarbazole-type nitrogen-containing compounds are preferably used from the viewpoint of polymer heat resistance ...

Embodiment

[0226] Hereinafter, although a synthesis example, a comparative synthesis example, an Example, and a comparative example are shown, and this invention is demonstrated more concretely, this invention is not limited to this. In addition, as the molecular weight and degree of dispersion, polystyrene-equivalent weight average molecular weight (Mw) and number average molecular weight (Mn) were obtained by gel permeation chromatography (GPC) using tetrahydrofuran as an eluent, and the degree of dispersion was obtained.

Synthetic example

[0227] Synthesis Example Synthesis of Compounds for Organic Film Forming Composition

[0228] In the synthesis of the compounds (A1) to (A22) for the composition for forming an organic film, the following compound group P: (P1) to (P12) and compound group Q: (Q1) to (Q5) were used. .

[0229] Compound Group P: Nitrogenous Compounds

[0230] [chemical formula 23]

[0231]

[0232] Compound Group Q: Aldehyde or Ketone Compounds

[0233] [chemical formula 24]

[0234]

[0235] Among them, a 37% formalin aqueous solution was used as the formaldehyde represented by (Q1).

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Abstract

The present invention provides a composition for forming an organic film which does not generate by-products even under film forming conditions in an inert gas for preventing corrosion of a substrateand an organic film which is excellent not only in patterning and flattening characteristics of a pattern formed on a substrate but also in dry etching resistance during substrate processing. Further,even when a CVD hard mask is formed on the organic film, the film thickness of the film does not fluctuate due to thermal decomposition. The present invention provides a composition for forming an organic film, comprising (A) a polymer having a repeating unit represented by the following formula (1) and (B) an organic solvent.

Description

technical field [0001] The present invention relates to a composition for forming an organic film for preventing corrosion of a substrate material used in a semiconductor device manufacturing process, a method for forming an organic film using the composition for forming an organic film, and a pattern by a multilayer resist method A formation method, a substrate for manufacturing a semiconductor device on which the organic film is formed, and a polymer suitable for the composition for forming an organic film. Background technique [0002] Hitherto, high integration and high speed of semiconductor devices can be achieved by refining the pattern size by shortening the wavelength of the light source in the lithography technology (photolithography) using photoexposure, which is a general-purpose technology. achieved. In order to form such a fine circuit pattern on a semiconductor device substrate (substrate to be processed), a method of processing the substrate to be processed ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/00G03F7/09H01L21/027
CPCG03F7/0035G03F7/004G03F7/09H01L21/0273H01L21/02118H01L21/02282H01L21/0332H01L21/31116H01L21/31138C08G16/0231C09D161/22C08L61/22G03F7/094C08K5/13C08K5/19C09D139/00H01L21/0271H01L21/324H01L21/033H01L21/02263C08G73/0266G03F7/11H01L21/3081G03F7/095C08L61/06C07C15/54C08G8/08G03F7/168
Inventor 郡大佑荻原勤渡边武新井田惠介泽村昂志
Owner SHIN ETSU CHEM CO LTD
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