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Oxide semiconductor material of thin film transistor, thin film transistor and manufacturing method thereof

A technology of oxide semiconductor and thin film transistor, which is applied in semiconductor/solid-state device manufacturing, transistors, semiconductor devices, etc., can solve problems such as the inability to drive ultra-high-resolution display requirements, and achieve ultra-high-resolution display driving requirements, Stable performance and the effect of suppressing the generation of oxygen vacancies

Pending Publication Date: 2019-03-29
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, with the development of ultra-high resolution display technology, the Hall mobility of devices requiring thin film transistors reaches 30cm 2 V -1 the s -1 And above can meet the driving requirements; while the current mainstream commercialized thin film transistors based on InGaZnO (IGZO) material system Hall mobility is about 10cm 2 V -1 the s -1 left and right, and cannot meet the requirements of driving ultra-high resolution displays

Method used

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  • Oxide semiconductor material of thin film transistor, thin film transistor and manufacturing method thereof
  • Oxide semiconductor material of thin film transistor, thin film transistor and manufacturing method thereof
  • Oxide semiconductor material of thin film transistor, thin film transistor and manufacturing method thereof

Examples

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Embodiment 1

[0038] This embodiment adopts a bottom-gate top-contact thin film transistor structure, such as figure 1 shown.

[0039] A method for preparing a thin film transistor as described above, comprising the steps of:

[0040] (1) Prepare grid 2: manufacture a layer of Al-Nd thin film with a thickness of 300nm by sputtering on glass substrate 1, and then pattern it by photolithography to obtain grid 2;

[0041] (2) Preparation of insulating layer 3: Place the substrate 1 obtained by the above step (1) in the electrolyte as the anode, and the metal Pt as the cathode, and perform anodic oxidation to prepare Nd:Al 2 o 3 The insulating layer 3 has a thickness of 200nm;

[0042] (3) Preparation of active layer 4: prepare active layer 4 by magnetron sputtering, Nb 2 o 5 and In 2 o 3 The target is made by blending and pressing and sintering in a certain proportion to obtain the Nb-In-O target, wherein the mass percentage of the two is Nb 2 o 5 : In 2 o 3 = 5%: 95%, the Nb-In-O t...

Embodiment 2

[0046] This embodiment adopts a bottom-gate top-contact thin film transistor structure, such as figure 1 shown.

[0047] A method for preparing a thin film transistor as described above, comprising the steps of:

[0048] (1) Prepare grid 2: manufacture a layer of Al-Nd thin film with a thickness of 300nm by sputtering on glass substrate 1, and then pattern it by photolithography to obtain grid 2;

[0049] (2) Preparation of insulating layer 3: Place the substrate 1 obtained by the above step (1) in the electrolyte as the anode, and the metal Pt as the cathode, and perform anodic oxidation to prepare Nd:Al 2 o 3 The insulating layer 3 has a thickness of 200nm;

[0050] (3) Preparation of active layer 4: prepare active layer 4 by magnetron sputtering, Nb 2 o 5 and In 2 o 3 The target is made by blending and pressing and sintering in a certain proportion to obtain the Nb-In-O target, wherein the mass percentage of the two is Nb 2 o 5 : In 2 o 3 = 10%: 95%, the Nb-In-O ...

Embodiment 3

[0054] Performance tests were performed on the prepared TFT devices 1 and 2 in air. Figure 5 is the transfer characteristic curve measured by the thin film transistor prepared in Example 1, Figure 6 is the measured transfer characteristic curve of the thin film transistor prepared in Example 2, which is the relationship between the drain current and the gate voltage. Figure 5 and Figure 6 The test condition of the curve is: source voltage (V S ) is 0V, the drain voltage (V D ) is constant at 20V, the gate voltage (V G ) from -20V to 20V sweep, test the drain current (I D ).

[0055] From Figure 5 It can be seen that the thin film transistor in which the Nb-In-O material in Example 1 is used as the active layer has excellent electrical properties. Its Hall mobility reaches 36.3cm 2 V -1 the s -1 , turn-on voltage –5.1V, current switch ratio is 2.17×10 7 , to meet the driving requirements of ultra-high resolution display.

[0056] From Figure 6 It can be seen...

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Abstract

The invention discloses an oxide semiconductor material of a thin film transistor, and a thin film transistor. Through an oxygen vacancy doping principle, niobium in a VB group element is skillfully doped on the basis of an In2O3 material, to form an Nb-In-O material which has advantages of high melting point, high Hall migration rate, and good stability. The thin film transistor made by the oxidesemiconductor material has more stable performance, Hall migration rate is higher than 30 cm<2>V<-1>s<-1>, and the thin film transistor can satisfy ultra-high resolution display drive requirements. In addition, electronegativity of the Nb element is high, and Nb-O bond binding energy is large, generation of oxygen vacancies can be effectively suppressed, thereby being beneficial for suppressing carrier concentration. Thus, a conductive channel in an active layer is effectively regulated by a grid electrode, and has good stability. The thin film transistor is simple in manufacturing process, and low in cost. Compared with a gallium element, the doped niobium element is more common, and the electronegativity of the Nb is large, and only a small amount of Nb2O3 needs to be doped to effectively suppress the carrier concentration, thereby greatly reducing manufacturing cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an oxide semiconductor material of a thin film transistor, a thin film transistor and a preparation method thereof. Background technique [0002] The new AMOLED display technology has become the new favorite in this field due to its advantages of high image quality, low power consumption, thinness, and flexibility. With the advancement of technology and the continuous improvement of people's living standards, flat-panel displays are developing towards ultra-high resolution (8K×4K). Therefore, higher requirements are put forward for the thin-film transistor technology used as the backplane. Thin film transistor backplane technology is the core technology of flat panel display. Traditionally, only the device Hall mobility is required to be within 10cm 2 V -1 the s -1 Left and right, the light-emitting drive requirements of OLED pixels can be met. However, wit...

Claims

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Application Information

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IPC IPC(8): H01L29/24H01L29/786H01L21/34
CPCH01L29/24H01L29/66969H01L29/7869
Inventor 肖鹏黄俊华刘佰全罗东向
Owner FOSHAN UNIVERSITY
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