Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of multilayer cermet thin film with structural color and preparation method thereof

A multi-layer metal and ceramic thin film technology, applied in the field of nanomaterials, can solve the problems of lack of stability and mechanical properties, difficulty in large-scale preparation, high cost equipment requirements, etc., to achieve rich colors, low cost, and convenient adjustment of parameters Effect

Active Publication Date: 2021-04-06
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods are complex in process, high in cost and equipment requirements, and difficult to achieve large-scale preparation
In addition, typical structural colors include metal grating nanostructures, nanohole structures of metal films, metal-dielectric-metal resonance structures, etc. These structures often do not have good stability and mechanical properties in the atmospheric environment, which further limits their applications. practical application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of multilayer cermet thin film with structural color and preparation method thereof
  • A kind of multilayer cermet thin film with structural color and preparation method thereof
  • A kind of multilayer cermet thin film with structural color and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The silicon wafer and the quartz wafer were ultrasonically cleaned with acetone, ethanol and deionized water for 15 minutes respectively to remove surface pollutants; the cleaned silicon wafer was dried with nitrogen and fixed on the substrate tray; the tray was loaded into the magnetron In the deposition chamber of the sputtering equipment, pre-evacuate to 10 at the same time -4 Below Pa; the argon gas flow is introduced to keep the pressure of the deposition chamber at 0.4Pa, and the gold target and the silicon dioxide target are cleaned by radio frequency sputtering for 10 minutes, and the substrate is cleaned by applying a bias voltage for 5 minutes; after the etching and cleaning, adjust the deposition Chamber pressure to 0.3Pa, turn off the silicon dioxide target power, open the baffle in front of the gold target, start sputtering, adjust the sputtering power density of the gold target to 3.5W / cm 2 , deposit the metal layer, the deposition time is 25min. Turn off...

Embodiment 2

[0049] The silicon wafer and the quartz wafer were ultrasonically cleaned with acetone, ethanol and deionized water for 15 minutes respectively to remove surface pollutants; the cleaned silicon wafer was dried with nitrogen and fixed on the substrate tray; the tray was loaded into the magnetron In the deposition chamber of the sputtering equipment, pre-evacuate to 10 at the same time -4 Below Pa; the argon gas flow is introduced to keep the pressure of the deposition chamber at 0.4Pa, and the gold target and the silicon dioxide target are cleaned by radio frequency sputtering for 10 minutes, and the substrate is cleaned by applying a bias voltage for 5 minutes; after the etching and cleaning, adjust the deposition Chamber pressure to 0.3Pa, turn off the silicon dioxide target power, open the baffle in front of the gold target, start sputtering, adjust the power density of the gold target to 3.5W / cm 2 , deposit the metal reflective layer, and the deposition time is 25 minutes. ...

Embodiment 3

[0052] The PET sheet was ultrasonically cleaned with acetone, ethanol and deionized water for 15 minutes respectively to remove surface pollutants; the cleaned silicon wafer was dried with nitrogen and fixed on the substrate tray; the tray was loaded into the magnetron sputtering equipment deposition chamber while pre-evacuating to 10 -4 Below Pa; keep the pressure of the deposition chamber at 0.4Pa by introducing an argon gas flow, and clean the silver target with DC sputtering, and clean the aluminum oxide target with radio frequency sputtering for 20 minutes, and apply a bias voltage to clean the substrate for 5 minutes; After etching and cleaning, adjust the pressure of the deposition chamber to 0.25Pa, open the baffles in front of the silver target and the silicon dioxide target, start co-sputtering, and apply the substrate bias voltage at the same time. Among them, the sputtering power density of silver target and alumina target is 1.5W / cm 2 and 4.5W / cm 2 , the substra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a multilayer metal-ceramic thin film with structural color, which sequentially includes a metal layer, a dielectric layer and a metal nanowire array-ceramic composite layer from a substrate; in the metal nanowire array-ceramic composite layer, The metal nanowires are vertically distributed in the ceramic phase, the diameter of the metal nanowires is not less than 2nm, the height is the same as the thickness of the metal nanowire array-ceramic composite layer, and the distance between the metal nanowires is 1.5-20nm. The absorption characteristics of the multilayer metal-ceramic thin film in the visible light band range are easy to control, and the obtained color has a large color gamut and good brightness and saturation. Also disclosed is a preparation method of a multilayer metal ceramic thin film with structural color, the preparation method is simple, low in cost and suitable for large area preparation.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and in particular relates to a multilayer metal ceramic film with structural color and a preparation method thereof. Background technique [0002] Traditional chemical dyes and pigments produce different colors through the selective absorption of visible light, but they are often toxic and harmful, environmentally unfriendly, easy to fade under light and high temperature, and difficult to recycle. Compared with chemical dyes, structural color materials based on artificial microstructures have the characteristics of convenient recyclability and good chemical stability. At the same time, they can break through the diffraction limit and improve imaging resolution. These characteristics make structural colors have important potential applications in the fields of ultra-high resolution imaging, flat panel display, optical sensing detection and high-end optical anti-counterfeiting. [0003] When lig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/22G02B5/20G02B5/08
CPCG02B5/0808G02B5/204G02B5/22
Inventor 高俊华曹鸿涛臧睿胡海搏王晓龙高文杰
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com