High breakdown voltage ZnO: X thin film and preparation method and application thereof

A technology of high breakdown voltage and thin film, which is applied in the field of high breakdown voltage ZnO:X thin film and its preparation, can solve the problems of high resistivity and breakdown voltage, and achieve the effect of increased film resistivity and good bonding force

Inactive Publication Date: 2019-04-09
NORTHEASTERN UNIV
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a transparent ZnO:X thin film with high resistivity and breakdown voltage and its preparation method in order to solve the problem of matching of insulating barrier layers of semiconductor integrated devices and pressure sensitive devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High breakdown voltage ZnO: X thin film and preparation method and application thereof
  • High breakdown voltage ZnO: X thin film and preparation method and application thereof
  • High breakdown voltage ZnO: X thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Example 1 In situ growth of ZnO:Al film

[0057] Step 1, cleaning of substrate

[0058] Use acetone and alcohol to ultrasonically clean the sapphire substrate for 15 minutes. After cleaning, use high-purity inert gas to dry it, put it into the sample chamber, and pass it into the vacuum chamber;

[0059] Step 2, oxophilic treatment of the substrate:

[0060] When the vacuum degree of the vacuum chamber is greater than or equal to 8×10 -5 Pa, the temperature is raised to 600°C, and high-purity O is introduced into the radio frequency plasma activation source. 2 ,, turn on the radio frequency plasma activation source, adjust its power to 400W, the oxygen flow rate to 2.4SCCM, and adjust the vacuum degree of the vacuum chamber to (1.5~4)×10 -3 Pa, oxidative treatment for 10 minutes.

[0061] Step 3, preparation of ZnO:Al film

[0062] The deposition conditions are as follows: the source material with a purity of 99.999% is co-evaporated, the atomic percentage of Al is...

Embodiment 2

[0065] Example 2 Contrast furnace oxidation of ZnO: Al thin film

[0066] Step 1, cleaning of substrate

[0067] Use acetone and alcohol to ultrasonically clean the sapphire substrate for 15 minutes. After cleaning, use high-purity inert gas to dry it, put it into the sample chamber, and pass it into the vacuum chamber;

[0068] Step 2, deposit Zn-Al metal film:

[0069] When the vacuum degree of the vacuum chamber is greater than or equal to 8×10 -5 Pa, use the co-evaporation of Zn and Al source materials with a purity of 99.999%, control the atomic percentage of Al at 14%, and stabilize the working pressure of the vacuum chamber at 1.0×10 when depositing metal. -4 Pa, the deposition time is 100min.

[0070] Step 3, oxidation treatment in vacuum tube furnace

[0071] Oxidation conditions: using high-purity O 2 to oxidize, O 2 The air pressure has been maintained at the atmospheric pressure level, the oxidation temperature is 450°C, and the oxidation time is 180 minutes....

Embodiment 3

[0073] Example 3 Comparison of in-situ oxidation of ZnO: Al film

[0074] Step 1, cleaning of substrate

[0075] Use acetone and alcohol to ultrasonically clean the sapphire substrate for 15 minutes. After cleaning, use high-purity inert gas to dry it, put it into the sample chamber, and pass it into the vacuum chamber;

[0076] Step 2, deposit Zn-Al metal film

[0077] When the vacuum degree of the vacuum chamber is greater than or equal to 8×10 -5 Pa, use the co-evaporation of Zn and Al source materials with a purity of 99.999%, control the atomic percentage of Al at 14%, and stabilize the working pressure of the vacuum chamber at 1.0×10 when depositing metal. -4 Pa, the deposition time is 100min.

[0078] Step 3, in-situ oxidation treatment

[0079] Oxidation conditions are: high-purity O with a flow rate of 1.8 SCCM is introduced into the radio frequency plasma activation source 2 Gas, the working power of the radio frequency plasma activation source is 380W, and the va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a high breakdown voltage ZnO: X thin film and a preparation method and application thereof and belongs to the technical field of semiconductor integrated devices and voltage-sensitive devices. According to the preparation method for the high breakdown voltage ZnO: X thin film, the ZnO: X thin film is deposited on a substrate by adopting a radio frequency plasma activationsource auxiliary codeposition method. The preparation method for the high breakdown voltage ZnO: X thin film comprises the specificsteps that high-purity oxygen is introduced into a radio frequency plasma activation resource, theoxygen flow is1.5-2.0 standard-state cubic centimeter per minute (SCCM), and working power of the radio frequency plasma activation resource is250W-450W; and metal Zn andmetal X are adopted as source materials, and codeposition is conducted, the substrate temperature isbetween the room temperature and 800 DEG C, the vacuum degree is(2-3.5) x 10<-3> Pa, and the deposition time isbetween 10 min and 120 min. The light transmittance of the thin film prepared with the above-mentioned method within a visible light range is between 80% and 100%, the electrical resistivity is within the range between 10<6> omega m and 10<8> omega m, and the breakdown voltage is within the range between 7000 v / mm and 8000 V / mm.

Description

technical field [0001] The invention relates to a high breakdown voltage ZnO:X thin film and its preparation method and application, in particular to a high breakdown voltage ZnO:X thin film with high resistivity and breakdown voltage and its preparation method and application, belonging to semiconductor Technical field of integrated devices and pressure-sensitive devices. Background technique [0002] ZnO is a direct wide bandgap semiconductor (~3.37eV), large exciton free energy (~60meV), good chemical stability and thermal stability, rich raw materials and non-toxic and harmless, so in piezoelectric, photoelectric , thermoelectric and dilute magnetic semiconductor fields have great application potential. ZnO is suitable for preparing optical-electrical-magnetic multifunctional devices and multi-material integrated devices with powerful functions. Insulating materials with high breakdown voltage have indispensable applications in these devices, such as materials used for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/08H01B3/10
CPCC23C14/086C23C14/24H01B3/10
Inventor 王强刘诗莹李国建贾宝海王凯
Owner NORTHEASTERN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap