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Process for preparing nano silicon carbide by sol-gel method

A sol-gel method, nano-silicon carbide technology, applied in the direction of silicon carbide, carbide, etc., can solve the problems of difficult dispersion, difficult mixing of carbon source and silicon source, etc., and achieves lower reduction temperature, good dispersion, and improved reduction. The effect of reaction speed

Active Publication Date: 2019-04-12
LANXI ZHIDE ADVANCED MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention provides a process for preparing nano-silicon carbide by sol-gel method, which solves the problem that carbon source and silicon source are difficult to mix evenly and disperse in the process of preparing silicon carbide nano-materials question

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  • Process for preparing nano silicon carbide by sol-gel method

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[0038] The silicon carbide powder prepared by the sol-gel method is homogeneously mixed, reduced at high temperature, and dispersed and classified, and the prepared silicon carbide powder has a narrow particle size distribution and high purity.

[0039] In order to better understand the above technical solutions, the above technical solutions will be described in detail below in conjunction with the accompanying drawings of the specification and specific implementations.

[0040] The embodiment of the present invention provides a process for preparing nano silicon carbide by a sol-gel method, which includes the following steps:

[0041] S1: Preparation of silica by sol-gel method;

[0042] S2: the silicon dioxide prepared in step S1 is homogeneously mixed with a homogenizer, a carbon source and a sintering reducing agent;

[0043] S3: high temperature reduction;

[0044] S4: Dispersed classification.

[0045] The invention prepares silica by a sol-gel method, and the prepared silica is we...

Embodiment 1

[0066] A process for preparing nano silicon carbide by sol-gel method includes the following steps:

[0067] S1: Preparation of silica by sol-gel method;

[0068] S1-1: Mix 1 part of ammonia, 2 parts of ethanol, and 10 parts of distilled water to obtain solution A;

[0069] S1-2: Mix 1 part of ethyl orthosilicate, 10 parts of ethanol, and 5 parts of distilled water to obtain solution B;

[0070] S1-3: Add solution B to solution A and react for 12 hours;

[0071] S1-4: Wash to obtain silica.

[0072] S2: The silica prepared in step S1 is homogeneously mixed with a homogenizer, a carbon source, and a sintering aid reducing agent;

[0073] S2-1: The silica obtained in S1 is dispersed in a liquid phase medium, a dispersant is added, and ultrasonic stirring is used to obtain a dispersion; the dispersant is one or more of an aqueous dispersant and an oily dispersant. The homogenizer is one or more of NaCl, KCl, ZnCl, and LiCl.

[0074] S2-2: The dispersion obtained in the step S2-1 is added wit...

Embodiment 2

[0080] A process for preparing nano silicon carbide by sol-gel method includes the following steps:

[0081] S1: Preparation of silica by sol-gel method;

[0082] S1-1: Mix 1 part of ammonia, 2 parts of ethanol, and 10 parts of distilled water to obtain solution A;

[0083] S1-2: Mix 1 part of ethyl orthosilicate, 10 parts of ethanol, and 5 parts of distilled water to obtain solution B;

[0084] S1-3: Add solution B to solution A and react for 12 hours;

[0085] S1-4: Wash to obtain silica.

[0086] S2: The silica prepared in step S1 is homogeneously mixed with a homogenizer, a carbon source, and a sintering aid reducing agent;

[0087] S2-1: The silica obtained in S1 is dispersed in a liquid phase medium, a dispersant is added, and ultrasonic stirring is used to obtain a dispersion; the dispersant is one or more of an aqueous dispersant and an oily dispersant. The homogenizer is one or more of NaCl, KCl, ZnCl, and LiCl.

[0088] S2-2: The dispersion obtained in the step S2-1 is added wit...

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Abstract

The invention provides a process for preparing nano silicon carbide by a sol-gel method, and relates to the technical field of preparation of the silicon carbide. The method comprises the following steps of S1, preparing silica by the sol-gel method; S2, homogeneously mixing the silica prepared in step S1 with a homogenizing agent, a carbon source and a combustion-supporting reducing agent; S3, conducting high-temperature reduction; S4, conducting dispersed grading. The process prepares the silica by the sol-gel method, and the prepared silica is well dispersed; the monodisperse silica, the homogenizing agent, the carbon source and the combustion-supporting reducing agent are homogeneously mixed, the high-temperature reduction is conducted, the prepared silica has good dispersibility and the problems of agglomeration and the like in the preparation process of the nano silicon carbide are solved. A reaction energy is activated by the combustion-supporting reducing agent, a reaction energy barrier is lowered, thereby lowering the reduction temperature of the silica, and convenience is provided for the prevention of the growth of high-temperature silicon carbide particles. Since the carbon source is uniformly mixed with the monodisperse silica, the reaction process is reduced, thereby contributing to an increase in a reduction reaction rate.

Description

Technical field [0001] The invention relates to the technical field of the preparation of silicon carbide, in particular to a process for preparing nanometer silicon carbide by a sol-gel method. Background technique [0002] Silicon carbide has many excellent physical and chemical properties, such as high hardness, high strength, stable chemical properties, and good high temperature oxidation resistance. It also has good chemical compatibility with many metals and metal oxides. It can be used to prepare metal-based, ceramic-based and polymer-based composite materials, which can enhance, toughen and harden, and can also be used directly As an abrasive material or an abrasive tool prepared into a certain shape, it is used for surface grinding and polishing of metals, ceramics, glass, stone, etc. [0003] In recent years, with the development of the electronics and computer industries, the demand for monocrystalline silicon oxide wafers has increased. The processing of high-quality m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/97
CPCC01B32/97
Inventor 房冰伍小波陈青华刘江平张丽娟
Owner LANXI ZHIDE ADVANCED MATERIALS CO LTD
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