Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of nano-cerium oxide for silicon slice polishing

A technology for polishing nano-cerium oxide and silicon wafers, which is applied in the direction of chemical instruments and methods, nanotechnology, polishing compositions containing abrasives, etc., can solve the problems of toxic exhaust gas, high cost, and long time period, and meet the requirements of equipment. High, low production cost, narrow particle size distribution effect

Inactive Publication Date: 2019-05-10
HUNAN UNIV
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Domestic universities and research institutes have tried to synthesize spherical cerium oxide particles of various sizes by various methods, for example: CN107043121A has proposed a method for preparing nano-hollow spherical cerium oxide, which adopts a chemical method, and the obtained cerium oxide hollow spheres The average particle size has reached submicron (0.3 μm); CN109455724A proposes a preparation method of ultra-high-purity silica sol, but its preparation steps are numerous, the process is complicated, and the time period is long, and the process efficiency is poor, resulting in higher cost
Most of the nano-cerium oxide preparation methods mentioned in the patents use cerium chloride or cerium nitrate. These preparation methods will produce highly corrosive and toxic exhaust gas, which will cause corrosion to the equipment, and put forward higher requirements for the corrosion resistance of the equipment. Requirements, and toxic exhaust gas treatment is more difficult, while increasing production costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nano-cerium oxide for silicon slice polishing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Dissolve 1.4g of sodium silicate into 2g of ultrapure water, then pour 4.6g of cerium carbonate into the sodium silicate solution while stirring, and obtain a dispersed slurry by ball milling, and then dry it by flash evaporation. Obtain a dry, uniform, and fine mixture powder; then place the mixture powder in a ceramic crucible, put the ceramic crucible in a muffle furnace, and calcine at a temperature of 700°C for 60 minutes; cool down to room temperature with the furnace; A spherical cerium oxide powder of 100-120 nm was obtained. Its scanning electron microscope image is shown in figure 1 shown.

[0023] The prepared 100-120nm cerium oxide is used for polishing silicon wafers, and it is easy to obtain a surface with high flatness without scratching the surface of the polished piece.

Embodiment 2

[0025] Dissolve 0.9g of sodium fluorosilicate into 2g of ultrapure water, then pour 4.6g of cerium carbonate into the sodium fluorosilicate solution while stirring, and obtain a dispersed slurry by ball milling, and then proceed by flash evaporation Dry to obtain a dry, uniform and fine mixture powder; then place the mixture powder in a ceramic crucible, put the ceramic crucible in a muffle furnace, calcining at 800°C for 30 minutes; cool to room temperature with the furnace; A spherical cerium oxide powder of 100-120 nm can be obtained.

[0026] The prepared 100-120nm cerium oxide is used for polishing silicon wafers, and it is easy to obtain a surface with high flatness without scratching the surface of the polished piece.

Embodiment 3

[0028] Dissolve 1.4g of sodium silicate into 2g of ultrapure water, then pour 5.4g of cerium oxalate into the sodium silicate solution while stirring, and obtain a dispersed slurry by ball milling, and then dry it by flash evaporation. Obtain a dry, uniform, and fine mixture powder; then place the mixture powder in a ceramic crucible, put the ceramic crucible in a muffle furnace, and calcine at a temperature of 700°C for 60 minutes; cool down to room temperature with the furnace; A spherical cerium oxide powder of 100-120 nm was obtained.

[0029] The prepared 100-120nm cerium oxide is used for polishing silicon wafers, and it is easy to obtain a surface with high flatness without scratching the surface of the polished piece.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of nano-cerium oxide for silicon slice polishing. The preparation method includes the steps: a adding water and stirring and dissolving a certain quantityof silicate, adding insoluble cerium salt into solution of the silicate and the water, and ball-milling mixture to obtain uniformly dispersed slurry; b drying the slurry acquired in the step a in a flash evaporation manner to obtain dry, uniform and fine powder; c calcining the powder acquired in the step b to obtain the nano-cerium oxide. The method had the advantages that the method is simple inprocess and low in device requirement and production cost, generated tail gas is easily absorbed, particle diameters are 100-120nm and narrow in distribution, the nano-cerium oxide is easily dispersed and the like.

Description

technical field [0001] The invention relates to a preparation method of nano cerium oxide used for silicon chip polishing. Background technique [0002] Rare earth elements have a unique outer electronic structure, which makes them have unique electrical, optical, thermal, magnetic and other properties, and can be widely used in high-energy magnetic devices, light-emitting devices, polishing materials, catalysts and other functional materials. Known as the industrial "MSG". my country's rare earth resources are very rich, accounting for more than 80% of the world's proven reserves, and the industrial reserves rank first in the world, providing unique conditions for the development of my country's rare earth industry. As an important rare earth nano-oxide, cerium oxide is widely used in chemical mechanical polishing and other fields due to its good oxygen storage capacity and special structure. Spherical nanoparticles are the most ideal grinding materials, but spherical cry...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C09G1/02B82Y40/00
Inventor 韦家谋田震罗冷
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com