Method for growing graphene on Si/C composite material, material obtained through such method, and application of such material

A composite material, graphene technology, applied in the direction of graphene, electrical components, battery electrodes, etc., can solve the problems of graphene surface pollution, poor high-rate charge-discharge performance, complex transfer process, etc., to improve electrochemical performance. , Improve the charging rate and reduce the effect of process steps

Inactive Publication Date: 2019-05-10
哈工大机器人(岳阳)军民融合研究院
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the coating of graphene film on the positive and negative electrodes of lithium battery first needs to prepare graphene film, and transfer the prepared graphene film by chemical method. In the transfer process, polymer-assisted transfer method is commonly used. This method is inevitable. It will bring pollution on the surface of graphene after transfer, affect the chemical properties of graphene itself, and the transfer process is complicated
[0004] At present, most lithium-ion batteries use graphite-like carbon as the negative electrode material. Although carbon negative electrode materials have many advantages, they have low specific capacity and poor high-rate charge-discharge performance; silicon has the highest specific capacity, but the volume of the unit cell during the cycle It will expand violently and produce "volume effect", which will lead to the destruction of the stability of the electrode structure, so that the discharge capacity will drop rapidly during the cycle. Although the Si / C composite material neutralizes the shortcomings of silicon negative electrode materials and carbon negative electrode materials, it does not Does not increase the charge and discharge rate of the battery

Method used

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  • Method for growing graphene on Si/C composite material, material obtained through such method, and application of such material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] S1. A nickel film and a copper film are sequentially deposited on the Si / C composite using a chemical vapor deposition method to obtain a Cu / Ni / Si / C composite. This step specifically includes:

[0048] Put the Si / C composite into the reaction chamber, evacuate and heat to 130°C at the same time;

[0049] Into the argon gas, then into the gaseous nickel carbonyl to deposit the nickel film.

[0050] After the nickel film is deposited, continue to pass argon into the reaction chamber, heat to 330°C under the condition of continuous argon, and pass hydrogen and copper chloride vapor to deposit the copper film.

[0051] S2. The Cu / Ni / Si / C composite is annealed in an argon and hydrogen environment. The annealing conditions are as follows: the first annealing stage: the annealing temperature is 920°C, and the annealing time is 5 hours; the second annealing stage: the annealing temperature is 1050°C, and the annealing time is 25 hours.

[0052] S3. The Cu / Ni / Si / C composite treated by S...

Embodiment 2

[0054] S1. A nickel film and a copper film are sequentially deposited on the Si / C composite using a chemical vapor deposition method to obtain a Cu / Ni / Si / C composite. This step specifically includes:

[0055] Put the Si / C composite into the reaction chamber, evacuate and heat to 120°C at the same time;

[0056] Into the argon gas, then into the gaseous nickel carbonyl to deposit the nickel film.

[0057] After the nickel film is deposited, continue to pass argon into the reaction chamber, heat to 300°C under the condition of continuously passing argon, and pass hydrogen and copper chloride vapor to deposit the copper film at the same time.

[0058] S2. The Cu / Ni / Si / C composite is annealed in an argon and hydrogen environment. The annealing conditions are as follows: the first annealing stage: the annealing temperature is 900°C, and the annealing time is 10 hours; the second annealing stage: the annealing temperature is 1100°C, and the annealing time is 20 hours.

[0059] S3. The Cu / Ni...

Embodiment 3

[0061] S1. A nickel film and a copper film are sequentially deposited on the Si / C composite using a chemical vapor deposition method to obtain a Cu / Ni / Si / C composite. This step specifically includes:

[0062] Put the Si / C composite into the reaction chamber, evacuate and heat to 150°C at the same time;

[0063] Into the argon gas, then into the gaseous nickel carbonyl to deposit the nickel film.

[0064] After the nickel film is deposited, continue to pass argon into the reaction chamber, and heat to 350°C under the condition of continuously passing argon, while passing hydrogen and copper chloride vapor to deposit the copper film.

[0065] S2. The Cu / Ni / Si / C composite is annealed in an argon and hydrogen environment. The annealing conditions are as follows: the first annealing stage: the annealing temperature is 950°C, the annealing time is 2 hours; the second annealing stage: the annealing temperature is 1000°C, the annealing time is 30 hours.

[0066] S3. The Cu / Ni / Si / C composite t...

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Abstract

The invention relates to a method for growing graphene on a Si/C composite material, a material obtained through such method, and application of such material. The method comprises the following steps: (1) orderly depositing a nickel film and a copper film on Si/C compound through a chemical vapor deposition method, and obtaining Cu/Ni/Si/C compound; (2) placing the Cu/Ni/Si/C compound in argon and hydrogen environment and performing annealing treatment; (3) placing the Cu/Ni/Si/C compound treated in the step (2) in methane and hydrogen atmosphere to react through the chemical vapor depositionmethod, cooling to room temperature under protection of argon, and consequently, growing out the graphene on the Si/C composite material. With the method provided by the invention, adding of the graphene in a battery core material or transfer and coating technologies for a graphene thin film are reduced, and damage to chemical properties of the existing graphene can be avoided.

Description

Technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for growing graphene on a Si / C composite material, a material prepared by the method, and its application. Background technique [0002] Existing graphene batteries generally add graphene materials on the basis of lithium batteries, and use carbon dioxide gas to make graphene into the shape of popcorn. This kind of popcorn-shaped graphene is called "graphene ball". These graphene balls are covered on the surface of the battery electrode to form a positive electrode protective film to increase the charging speed, or graphene is used as an additive material for the battery core. Improve the chemical performance of the original battery. [0003] The existing graphene film coating on the positive and negative electrodes of the lithium battery first requires the preparation of the graphene film, and the prepared graphene film is transferred by a chemical method. The po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/583H01M4/62H01M10/052C01B32/188
CPCY02E60/10
Inventor 栾志博李瑞君李建英
Owner 哈工大机器人(岳阳)军民融合研究院
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