Method for manufacturing bidirectional TVS chip by using printing process

Abstract

The invention relates to a method for manufacturing a bidirectional TVS chip by using a printing process. The method comprises the preparation steps that a silicon wafer is subjected to pretreatment,double-sided diffusion and texturing are performed, glass blunt printing and drawing are performed, metallization is performed and test sorting is performed, wherein the step of double-sided diffusionand texturing is that diffusion is carried out by a double-sided deposition phosphorus source or a double-sided printing boron source, wet texturing or laser texturing is adopted, the glass blunt process adopts a printing method to perform coating of a protective layer and a glass paddle, the glass blunt process is simplified, and the preparation rate is increased. Compared with a traditional method, the bidirectional TVS chip production process by the printing technology is large-scale, automatic, informationized and less humanized; bidirectional TVS chip products are low in production cost,high in quality, high in consistency and good in market compatibility; and the printing process efficiency is high, precision is high, the coating, film coating, electrophoresis and other processes are replaced in an existing process, automation and less humanized production is achieved, product consistency is improved, and environmental and safety risks are reduced.

Description

technical field [0001] The invention belongs to the technical field of bidirectional TVS chips, and in particular relates to a method for manufacturing a bidirectional TVS chip by using a printing process. Background technique [0002] TVS (Transient Voltage Suppressor) diode, also known as transient suppression diode, is a new type of high-efficiency circuit protection device commonly used. It has an extremely fast response time (sub-nanosecond level) and a relatively high surge absorption capacity. It cooperates with components such as resistors and capacitors for the purpose of transient high voltage suppression protection. When its two ends are subjected to instantaneous high-energy impact, TVS can change the impedance value between the two ends from high impedance to low impedance at a very high speed, so as to absorb an instantaneous large current and clamp the voltage at both ends A predetermined value, so as to protect the subsequent circuit components from the impa...

AI Technical Summary

Problems solved by technology

[0004] Currently, three processes are mainly used in the industry to produce bidirectional TVS chips: knife scraping process, electrophoresis process, and photoresist glass process. Among these three processes, the knife scraping bidirectional TVS process is simple and low in cost, but due to the And there is no oxide film protection on the passivated glass, the solder is easy to flow to the glass, the reliability will be reduced, and it is easy to fail in application; the sharp corners of the electrophoresis process groove are protected by passivated glass, and the reliability is relatively high, but due to platinum There are many production processes, and a large amount of acetone is required for production, which has potential safety hazards and relatively high costs; the photoresist glass method uses three layers of passivation protection (SIPOS, glass, silicon dioxide), and the reverse voltage is higher. Silicon wafer resistors are used The rate range is wider and the reliability is high, but 3 times of photolithography are required in production, and the production cost is high