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Preparation of rubidium-doped nickel oxide thin film and application of thin film being hole transporting layer to perovskite solar cell

A technology of nickel oxide and perovskite, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of difficult control of the microstructure and morphology of the perovskite layer, low device fill factor and short-circuit current, and high crystal size dependence , to achieve high photoelectric conversion efficiency, reduce nickel defects, and good hole mobility

Active Publication Date: 2019-06-14
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The following problems mainly arise in the research process of perovskite solar cells: the microstructure and morphology of the perovskite layer are difficult to control, and its crystal size is highly dependent on solvents, spin-coating processes, annealing processes, etc., and the perovskite solar cells Batteries are prone to poor stability due to environmental factors such as light, heat, oxygen, and water
However, the low conductivity of nickel oxide itself easily leads to carrier recombination of perovskite and reduces the extraction of holes, resulting in low device fill factor and short-circuit current, thereby reducing the performance of the battery.

Method used

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  • Preparation of rubidium-doped nickel oxide thin film and application of thin film being hole transporting layer to perovskite solar cell
  • Preparation of rubidium-doped nickel oxide thin film and application of thin film being hole transporting layer to perovskite solar cell
  • Preparation of rubidium-doped nickel oxide thin film and application of thin film being hole transporting layer to perovskite solar cell

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Embodiment 1

[0027] Example 1: Preparation of pure nickel oxide as a hole transport layer and its application in reverse planar perovskite solar cells.

[0028] Step 1: Clean the surface of ITO glass (1.5 cm*1.5 cm), and clean the surface with ultraviolet ozone for 10 min.

[0029]Step 2: Dissolve 0.3 g nickel acetate tetrahydrate in 10 g ethylene glycol solution containing 0.1 g diethylamine, and stir overnight at room temperature to form a green nickel oxide precursor solution. The mixed precursor solution of nickel oxide was spin-coated on the substrate at a speed of 3000 r, followed by annealing at 200 °C for 10 min and 380 °C for 20 min to prepare a nickel oxide film, and put the nickel oxide film in a glove box

[0030] Step 3: In the glove box, place 439 mg of PbI 2 , 37 mg PbBr 2 , 120 mg FAI, 32 mg MAI, and 26 mg CsI were dissolved in 0.8 mL of mixed solvent (DMF:DMSO = 4:1 (v / v)) and stirred to obtain a perovskite precursor solution. The body solution was spin-coated on the ni...

Embodiment 2

[0033] Example 2: Preparation of rubidium-doped nickel oxide film as a hole transport layer and its application in reverse plane perovskite solar cells.

[0034] Except for step 2, all steps and methods are exactly the same as in the foregoing embodiment 1.

[0035] Step 2: Dissolve 0.3 g nickel acetate tetrahydrate and 28 mg rubidium acetate in 10 g ethylene glycol solution containing 0.1 g diethylamine, and stir overnight at room temperature to form a green rubidium-doped nickel oxide precursor solution. The mixed precursor solution of rubidium-doped nickel oxide was spin-coated on the substrate at a speed of 3000 r, followed by annealing at 200 °C for 10 min and at 380 °C for 20 min to prepare the rubidium-doped nickel oxide thin film.

[0036] Implementation effect: Finally, elemental analysis of nickel oxide and rubidium-doped nickel oxide films, characterization of electrical conductivity, morphology, and energy levels, as well as perovskite film morphology and perovskit...

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Abstract

The invention discloses preparation of a rubidium-doped nickel oxide thin film and application of the thin film being a hole transporting layer to a perovskite solar cell. According to the preparationof the rubidium-doped nickel oxide thin film, nickel acetate tetrahydrate and rubidium acetate are dissolved in a diethylamine-contained glycol solution according to a certain proportion, and the solution is stirred under room temperature and stays overnight to become a green rubidium-doped nickel oxide precursor solution; the rubidium-doped nickel oxide precursor solution is spread on an ITO glass substrate in a spin-coating mode, next annealing is performed twice under different temperatures, and then the rubidium-doped nickel oxide thin film is prepared. All layers of a reverse planar perovskite solar cell structure are ITO, rubidium-doped nickel oxide, perovskite, PCBM, BCP and silver sequentially from bottom to top. The rubidium-doped nickel oxide thin film has better conductivity and a higher hole migration rate, defects of nickel can be reduced, and therefore extraction of holes is benefited; and perovskite thin film grains grown on the rubidium-doped nickel oxide thin film arelarger in size. The rubidium-doped nickel oxide thin film has higher photoelectric conversion efficiency and better stability.

Description

technical field [0001] The invention belongs to the technical field of new material solar cells, and relates to the preparation of a hole transport layer and its application in perovskite solar cells. Background technique [0002] In recent years, an organic-inorganic halide perovskite ABX 3 (X is I - , Br - , Cl - ; A is methylamine MA + , formamidine FA + , Cs + , Rb + etc.; B is Pb 2+ , Sn 2+ etc.) have shown broad application prospects due to the combination of low-cost solution processing and excellent photoelectric conversion performance. This type of perovskite material has a good light absorption coefficient, a long charge diffusion length, an adjustable band gap, solution processing, and the ability to prepare flexible, transparent, and stacked batteries, which has attracted the attention of many researchers. After a few years of rapid development, the certified photoelectric conversion efficiency of perovskite solar cells has grown from an initial 3.8% to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48H01L51/46
CPCY02E10/549
Inventor 胡婷付青霞陈义旺谈利承袁凯
Owner NANCHANG UNIV