Quantum dot film, preparation method thereof, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A technology for quantum dots and quantum dots to emit light, applied in the field of flat panel display, can solve the problem that the solubility and dispersive conductivity of quantum dots are difficult to achieve a balance, improve stability and carrier transport capacity, improve overall performance, and achieve scale Effects of chemical and industrial production

Inactive Publication Date: 2019-06-25
TCL CORPORATION
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot film and its preparation method, aiming at solving the problem that the dissolution and dispersion of quantum dots and their electrical conductivity are difficult to balance in the preparation process of the existing quantum dot film technical problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot film, preparation method thereof, QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] Among them, Formula 1, Formula 2, Formula 3, and Formula 4 contain at least one conjugated group, specifically, in Formula 1, R is a conjugated group; in Formula 2, at least one of R1 and R2 is a conjugated group Group; in formula 3, at least one of R, R1, R1', R2, R2' is a conjugated group; in formula 4, R1, R1', R2, R2', R3, R3', R4, R4 At least one of ', R5, R5' is a conjugated group. Conjugated groups have been described above, for example, R, R1, R1', R2, R2', R3, R3', R4, R4', R5, R5' can be independently selected from unsaturated hydrocarbon groups or hydrocarbon derivatives, such as alkenes group, alkyne group, aryl group, heteroaryl group and their derivatives, etc. X1, X1', X2, X2', X3, X3' are active functional groups, functional groups capable of chelating with the surface of quantum dots, preferably, the active functional groups include halogen atoms, -SH, -COOH, -NH 2 , -OH, -NO 2 、-SO 3 At least one of H, phosphine group, phosphoric acid group, ether ...

Embodiment 1

[0076] A method for preparing a quantum dot film, comprising the following steps:

[0077] Provide a CdSe quantum dot prefabricated film, transfer the quantum dot prefabricated film into a vacuum chamber, and feed 1,2-ethanedithiol gas, wherein the internal pressure of the vacuum chamber is 5Pa, 1,2-ethanedithiol The partial pressure of the gas is 1 Pa, the temperature inside the chamber is 25°C, and the treatment time is 30 minutes. After the treatment, it is taken out to obtain a CdSe quantum dot film whose ligand is substituted with 1,2-ethanedithiol.

Embodiment 2

[0079] A method for preparing a positive-type structure quantum dot light-emitting diode, comprising the following steps:

[0080] Print PEDOT hole injection layer, TFB hole transport layer, and CdSe quantum dot prefabricated film coated with oleic acid ligand on the ITO anode in sequence;

[0081] The quantum dot prefabricated film prepared above is transferred to a vacuum chamber, and 1,4-benzenedithiol gas is introduced, wherein the internal pressure of the chamber is 5Pa, and the partial pressure of 1,4-benzenedithiol gas is 1Pa. The temperature inside the chamber is 25°C, and the treatment time is 30 minutes. After the treatment, it is taken out to obtain a CdSe quantum dot light-emitting layer cross-linked by 1,4-benzenedithiol ligand;

[0082] Print a ZnO electron transport layer on the ligand-conjugated and cross-linked quantum dot light-emitting layer obtained above, and finally vapor-deposit an Al cathode to obtain a positive-type structure quantum dot light-emitting...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of panel display, and specifically relates to a quantum dot film, a preparation method thereof, a QLED (Quantum dot Light-Emitting Diode) device and a preparation method thereof. The surface of a quantum dot in the quantum dot film is bound with a conjugated ligand with the following structural general formula: X1-R-X2, wherein both X1 and X2 are a functional group capable of being bound with the surface of the quantum dot, and R is an alkyl or alkyl derivative with a conjugated group. According to the quantum dot film provided by the invention, thequantum dot surface is connected with the specific conjugated ligand, and the conjugated ligand cross-links the quantum dots to enable the solubility, dispersion and conductivity of the quantum dotsto reach a better balance state, so that the stability and the carrier transmission ability of the quantum dot film are further improved, the light-emitting efficiency is correspondingly improved, andthe overall performance is improved.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a quantum dot thin film and a preparation method thereof, a QLED device and a preparation method thereof. Background technique [0002] Quantum dot (Quantum dot) is a quasi-zero-dimensional nanomaterial, similar to superlattice and quantum well, its particle size is about 1-100nm, and has properties such as quantum confinement effect, surface effect, quantum size effect and quantum tunneling effect. , and has outstanding advantages such as good monochromaticity, high color purity, and narrow luminescence spectrum, and is a very promising nanomaterial. Quantum dots-based light-emitting diodes are called quantum dots light-emitting diodes (QLEDs), which are a new type of display technology. The advantages of quantum dot display are wide color gamut coverage, easy color control, and high color purity. It is considered to be a new star in display technology, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56C09K11/02
Inventor 曹蔚然梁柱荣杨一行向超宇钱磊
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap