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A kind of preparation method of optoelectronic device and optoelectronic device

A technology of optoelectronic devices and perovskites, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Active Publication Date: 2021-01-08
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a photoelectric device and a photoelectric device, which has solved the problem of low electroluminescence efficiency of perovskite LEDs in the prior art

Method used

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  • A kind of preparation method of optoelectronic device and optoelectronic device
  • A kind of preparation method of optoelectronic device and optoelectronic device
  • A kind of preparation method of optoelectronic device and optoelectronic device

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preparation example Construction

[0057] According to another aspect of the present invention, there is provided a method for preparing the above photoelectric device, which includes preparing a perovskite film layer. The method for preparing a perovskite film layer includes: setting a precursor solution on a substrate and making the precursor solution on the substrate Diffusion on the bottom, the precursor solution includes a metal halide, a first organic cation halide, a second organic cation halide and a polar solvent; after the precursor solution reacts for the first time, add an anti-solvent, react for a second time, Removing the polar solvent and the above-mentioned anti-solvent, and using centrifugal force to get rid of the excess first organic cation halide to obtain the above-mentioned perovskite film layer; wherein, the above-mentioned first organic cation halide is used as a precursor of the ligand, and the above-mentioned The anti-solvent is capable of dissolving the above-mentioned first organic ca...

Embodiment 1

[0088] Preparation process of PeLED device

[0089] 1. ITO glass substrate cleaning: gently wipe the front and back of the ITO glass substrate with a dust-free cloth, then scrub with a cotton swab in acetone and ethanol solution, and then ultrasonically follow the sequence of acetone-ethanol-deionized water-ethanol for 10 minutes , blow dry carefully with a nitrogen gun after sonication, and finally treat under air plasma for 15 minutes.

[0090] 2. Preparation of nickel oxide hole transport layer: drop the nickel oxide precursor solution onto the ITO glass substrate and spin-coat at 4000 rpm for 40 seconds, and anneal on a hot stage at 270°C for 30 minutes, wait for the temperature to drop After reaching room temperature, the device was treated with ozone for 30 minutes.

[0091] 3. Spin-coating hole transport layer: Spin-coat 8 mg / mL TFB (solvent is m-xylene) on the nickel oxide layer at a speed of 2000 rpm for 45 seconds, then place the device on a hot stage Anneal at 150...

Embodiment 2

[0096] The difference with Example 1 is that PBABr and PbBr of different quality are weighed 2 , so that PBABr and PbBr 2 The molar ratio is 1.4.

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Abstract

The invention provides a photoelectric device, comprising: a substrate, and a perovskite film layer disposed above the substrate, the perovskite film layer comprising organic metal halide perovskite quantum dots and organic metal halide perovskite Mineral quantum wells, perovskite quantum dots and perovskite quantum wells have an energy coupling relationship. The perovskite film layer includes perovskite quantum wells and perovskite quantum dots, and the perovskite quantum wells can transfer energy to the perovskite quantum dots, thereby achieving high-efficiency luminescence.

Description

technical field [0001] The invention relates to the field of perovskite photoelectric devices, in particular to a method for preparing a photoelectric device and the photoelectric device. Background technique [0002] Inorganic-organic hybrid perovskite is an excellent crystalline semiconductor that can be implemented by solution method, which provides hope for large-area and low-cost fabrication of color-saturated display LEDs or lighting LEDs. However, the performance of blue perovskite LEDs is still far behind that of other large-wavelength perovskite LEDs (hereinafter referred to as PeLEDs), which seriously hinders the development of perovskite LEDs. [0003] Recently, some blue perovskite materials with excellent photoluminescence (PL) have appeared in a small amount by controlling the composition, morphology and process. However, when these materials are made into thin films for LEDs, their electroluminescence efficiency is hardly as high as the PL efficiency. So far...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/60H10K50/11H10K71/00
Inventor 金一政刘杨
Owner ZHEJIANG UNIV