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Electron transport material and its preparation method and qled device

A technology of electron transport materials and metal ions, which is applied in the field of QLED devices, electron transport materials and their preparation, can solve the problems of difficulty in improving the luminous efficiency of QLED devices, limited solid solubility, and difficulty in improving the conductivity of zinc oxide, so as to improve the luminescence Efficiency and device performance, improved conductivity, and the effect of increasing the solid solubility limit

Active Publication Date: 2020-12-25
TCL CORPORATION
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  • Abstract
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  • Claims
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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide an electron transport material and its preparation method and a QLED device, aiming to solve the problem that the existing high-valent state metal ions have limited solid solubility when doped with zinc oxide, resulting in oxidation The technical problem that it is difficult to improve the conductivity of zinc and the luminous efficiency of QLED devices

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  • Electron transport material and its preparation method and qled device

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preparation example Construction

[0031] Correspondingly, a specific embodiment of the present invention provides a method for preparing an electron transport material, comprising the following steps:

[0032] S01: Provide zinc salt and divalent doping metal salt, dissolve the zinc salt and the divalent doping metal salt in the first solvent, and obtain divalent metal ion-doped zinc oxide nanoparticles under alkaline conditions particle solution;

[0033] S02: removing the solvent and unreacted impurities in the zinc oxide nanoparticle solution doped with divalent metal ions to obtain zinc oxide nanoparticles doped with divalent metal ions;

[0034] S03: dissolving the zinc oxide nanoparticles doped with divalent metal ions in a second solvent to obtain a colloidal solution of zinc oxide doped with divalent metal ions;

[0035] S04: Deposit the zinc oxide colloidal solution doped with divalent metal ions on a substrate, and perform oxidation treatment to obtain the electron transport material.

[0036] The p...

Embodiment 1

[0069] The synthesis of iron ion-doped zinc oxide colloidal solution, the preparation of iron ion-doped zinc oxide electron transport material and its oxidation treatment process are described in detail below by taking the iron ion-doped zinc oxide electron transport material as an example.

[0070] First, an appropriate amount of zinc acetate and ferrous salt FeSO 4 Add to 50ml methanol solvent to form a mixed salt solution with a total concentration of 0.1mol / L, where Fe 2+The doping molar concentration is 20%. At the same time, an appropriate amount of potassium hydroxide powder is dissolved in another part of 50ml of methanol solvent to form a concentration of 0.3mol / L lye. The mixed salt solution was then heated to 50 °C, and potassium hydroxide solution was added dropwise until the molar ratio of hydroxide ions to metal ions was 1.7:1. After the infusion of the potassium hydroxide solution was completed, the mixed solution was continuously stirred at 50° C. for 2 h to ...

Embodiment 2

[0074] The synthesis of the chromium ion-doped zinc oxide colloidal solution, the preparation of the chromium ion-doped zinc oxide electron transport material and its oxidation treatment process are described in detail below by taking the chromium ion-doped zinc oxide electron transport material as an example.

[0075] First, an appropriate amount of zinc nitrate and divalent chromium salt CrCl 2 Add it into 50ml ethanol solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein the doping molar concentration of Cr2+ is 15%. At the same time, an appropriate amount of lithium hydroxide powder was dissolved in another 50ml ethanol solvent to form a 0.2mol / L lye. The mixed salt solution was then heated to 40 °C, and lithium hydroxide solution was added dropwise until the molar ratio of hydroxide ions to metal ions was 1.9:1. After the lithium hydroxide solution was dripped, the mixed solution was stirred at 30° C. for 1 h to obtain a uniform transparen...

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Abstract

The invention belongs to the technical field of quantum dots, and in particular relates to an electron transport material, a preparation method thereof and a QLED device. The electron transport material is zinc oxide doped with metal ions, the metal ions are two or three metal ions of the same metal element in different valence states, and the lowest valence state of the metal ions is positive divalent. The electron transport material uses ions of the same metal element in a high and low valence state to co-dope the zinc oxide material, and the doped zinc oxide material significantly improves the concentration of the high valence state metal ions in the zinc oxide material through the doping of the low valence state metal ions. The doping limit in the ZnO significantly improves the conductivity of the ZnO electron transport layer, and finally improves the luminous efficiency of the device.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to an electron transport material, a preparation method thereof and a QLED device. Background technique [0002] Recently, with the continuous development of display technology, quantum dot light-emitting diodes (QLEDs) using quantum dot materials as the light-emitting layer are receiving more and more attention. Its high luminous efficiency, controllable luminous color, high color purity, good device stability, and flexible use make QLED have great application prospects in the fields of display technology and solid-state lighting. [0003] As an electron transport layer material commonly used in quantum dot light-emitting diodes, zinc oxide has a good energy level matching relationship with the cathode and quantum dot light-emitting layer, which significantly reduces the injection barrier of electrons from the cathode to the quantum dot light-emitting layer. And i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/165H10K2102/00H10K71/40H10K71/00
Inventor 吴龙佳
Owner TCL CORPORATION
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