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A radio frequency microsystem with electromagnetic shielding function and its forming process

A molding process and micro-system technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of complex TSV production process, large specific gravity, long production cycle, etc., and achieve the effect of shortening the production cycle

Active Publication Date: 2021-01-26
浙江集迈科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to deal with this problem, the increase of electromagnetic shielding layer is the current mainstream method, and it is also a necessary protection method to prevent electromagnetic wave pollution. Generally, the plastic body of IC chip is non-conductive and has almost no shielding effect on electromagnetic field.
At present, it is more common to place a metal shield outside the package. This method has good shielding performance, but it has a large specific area, takes up a large area, is expensive, and is not resistant to corrosion.
[0005] In order to solve these problems, the new generation of three-dimensional stacked system-in-package introduces metal-filled TSV to isolate the radio frequency chip, so as to play the role of electromagnetic shielding. However, the manufacturing process of TSV is complicated, the production cycle is long and the cost is high, so it is not suitable for mass production.

Method used

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  • A radio frequency microsystem with electromagnetic shielding function and its forming process
  • A radio frequency microsystem with electromagnetic shielding function and its forming process
  • A radio frequency microsystem with electromagnetic shielding function and its forming process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1, with reference to attached Figure 1-3 .

[0040] Such as image 3 As shown, a radio frequency microsystem with electromagnetic shielding function includes a base wafer 101 and an interconnect wafer 201, and the base wafer 101 and the interconnect wafer 201 are bonded together through a wafer-level packaging process.

[0041] Such as figure 1 As shown, an insulating layer 103 is provided on the upper surface of the base wafer 101 , and a metal post 102 is provided on the upper surface of the base wafer 101 , and the metal post 102 penetrates the insulating layer 103 and is fixedly connected to the base wafer 101 .

[0042] Such as figure 2 As shown, an interconnection groove 203 is provided on the surface of the interconnection wafer 201, a TSV hole 202 capable of penetrating the interconnection wafer 201 is provided in the interconnection wafer 201, and a TSV hole 202 for connecting chips or functions is provided on the surface of the interconnection ...

Embodiment 2

[0045] Embodiment 2, with reference to attached Figure 4-5 .

[0046] Such as Figure 5 As shown, a radio frequency microsystem with electromagnetic shielding function includes an interconnection wafer 201 and a cover wafer 301, and the interconnection wafer 201 and the cover wafer 301 are bonded together through a wafer-level packaging process.

[0047] Interconnection grooves 203 are provided on the surface of the interconnection wafer 201, TSV holes 202 that do not penetrate the interconnection wafer 201 are provided in the interconnection wafer 201, or TSVs that penetrate the interconnection wafer 201 are provided in the interconnection wafer 201 Holes 202 are then provided on the bottom of the interconnect wafer 201 with the backplane wafer 101 as a bottom cover.

[0048] RDL pads 204 for connecting chips or functional chips are provided on the surface of the interconnection wafer 201 .

[0049] Such as Figure 4 As shown, the upper surface of the cover wafer 301 is ...

Embodiment 3

[0051] Embodiment 3, with reference to attached Figure 1-3 .

[0052] This example is a molding process that can be used to prepare the system of Example 1.

[0053] The molding process of this embodiment specifically includes the following steps:

[0054] (1) Fabrication of the base wafer 101: choose a wafer with a diameter of 4, 6, 8, and 12 inches, a thickness ranging from 200 μm to 2000 μm, and an organic or inorganic material as the base wafer, and the material of the organic or inorganic wafer One or more of glass, quartz, silicon carbide, aluminum oxide, epoxy resin, and polyurethane, and a base insulating layer made of silicon oxide or silicon nitride is deposited on the surface of the base wafer, and the thickness of the base insulating layer is within 10nm to 1000 μm.

[0055] (2) Fabrication of metal pillars 102: the metal pillars are manufactured by electroplating process, the height of the metal pillars ranges from 10nm to 1000μm, the metal pillars include at ...

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Abstract

The present invention provides a radio frequency microsystem with electromagnetic shielding function, which includes a base wafer and an interconnect wafer. The base wafer and the interconnect wafer are bonded together through a wafer-level packaging process, and the base wafer and / or the interconnect wafer TSV holes are arranged on the round surface, and metal pillars are arranged in the TSV holes, and the metal pillars are not in contact with the inner wall of the TSV holes. The present invention also provides a forming process of the radio frequency microsystem with electromagnetic shielding function. The present invention adopts electroplated copper pillars as the peripheral structure of electromagnetic shielding, by punching holes on the base welded with radio frequency chips, and embedding electroplated copper pillars in the holes by wafer-level bonding technology, to obtain metal pillars surrounding radio frequency chips The structure not only bypasses the TSV process, but also greatly shortens the production cycle.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a radio frequency microsystem structure with electromagnetic shielding function. Background technique [0002] With the gradual reduction of chip size, the traditional single-chip packaging process has transitioned from the original socket type to BGA, then to WLCSP and finally to Fan-out, but with the introduction of system-level functional modules, the way of system-in-package It has gradually replaced the previous single-chip type. Through the carrier, chips of different materials and functions are integrated into a smaller area, which reduces the unit area occupied by the chip, shortens the signal interconnection line, and facilitates product assembly. [0003] However, for the communication industry, high-frequency RF chips have gradually replaced the original low-frequency products, so that there is a gap between RF chips and RF chips, between RF chips and other func...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/48H01L21/52H01L21/56H01L21/60H01L23/552
CPCH01L21/4817H01L21/52H01L21/56H01L23/552H01L24/03H01L2224/16225
Inventor 冯光建郭丽丽郑赞赞陈雪平刘长春丁祥祥王永河郁发新
Owner 浙江集迈科微电子有限公司