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Quantum anomalous Hall effect thin-film microstructural device and preparation method thereof

An abnormal Hall effect and microstructure technology, applied in the field of electronic information, can solve the problems of compound film material damage, difficulty in developing time control, etc., and achieve the effect of avoiding corrosion

Active Publication Date: 2019-08-06
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thanks Al 2 o 3 The thickness is about 2nm, which requires the development time to be very precise. Once over-developed, the NaOH developer will dope Cr (Bi, Sb) 2 Te 3 Compound thin film materials cause damage, therefore, it is very difficult to control the development time

Method used

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  • Quantum anomalous Hall effect thin-film microstructural device and preparation method thereof
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  • Quantum anomalous Hall effect thin-film microstructural device and preparation method thereof

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preparation example Construction

[0046] A method for preparing a quantum anomalous Hall effect thin film microstructure device, the specific steps are as follows:

[0047] 1) Evenly coated protective layer: Al in topological insulator material 1 2 o 3 Layer 103 is evenly coated with electron beam glue as the protective layer 201; the electron beam glue is PMMA electron beam glue with a thickness of 100-120nm; last for 50-60s; if figure 2 shown;

[0048] 2) Uniform coating of UV photoresist: Uniform coating of UV positive photoresist 301 on the protective layer 201; the thickness of the UV positive photoresist is 800-900nm, and the uniform coating process conditions are: the speed is 600r / min for 6 -8s, at 4000r / min for 50-60s, harden the photoresist film layer on the rubber baking table, set the temperature at 85-90°C, and the time is 260-300s; image 3 shown;

[0049] 3) Single-layer photolithography: transfer the pattern of the mask to the UV positive photoresist 301 by photolithography process; the e...

Embodiment 1

[0062] A method for preparing a quantum anomalous Hall effect thin film microstructure device, the specific steps are as follows:

[0063] 1) Evenly coated protective layer: Al in topological insulator material 1 2 o 3 Layer 103 is uniformly coated with electron beam glue as the protective layer 201; the electron beam glue is PMMA electron beam glue with a thickness of 100nm; the process conditions for uniform glue are: 600r / min at a speed of 600r / min for 6s, and 4000r / min for 50s;

[0064] 2) Uniform coating of UV photoresist: uniform coating of UV positive photoresist 301 on the protective layer 201; the thickness of the UV positive photoresist is 800nm, and the uniform coating process conditions are: 600r / min at a speed of 6s, 4000r Continue for 50s at the rotation speed of / min, and harden the photoresist film layer on the rubber baking table, set the temperature at 85°C, and the time is 260s;

[0065] 3) Single-layer photolithography: transfer the pattern of the mask to...

Embodiment 2

[0070] A method for preparing a quantum anomalous Hall effect thin film microstructure device, the specific steps are as follows:

[0071] 1) Evenly coated protective layer: Al in topological insulator material 1 2 o 3 Layer 103 is evenly coated with electron beam glue as the protective layer 201; the electron beam glue is PMMA electron beam glue with a thickness of 105nm; the process conditions for uniform glue are: the speed of 600r / min lasts for 7s, and the speed of 4000r / min lasts for 52s;

[0072] 2) Uniform coating of UV photoresist: uniform coating of UV positive photoresist 301 on the protective layer 201; the thickness of the UV positive photoresist is 820nm, and the uniform coating process conditions are: 600r / min for 7s, 4000r Continue for 52s at the speed of / min, and harden the photoresist film layer on the rubber baking table, set the temperature at 86°C, and the time is 270s;

[0073] 3) Single-layer photolithography: transfer the pattern of the mask to the UV...

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Abstract

The invention discloses a preparation method of a quantum anomalous Hall effect thin-film microstructural device, which comprises the specific steps of uniformly coating electron beam glue on an Al2O3layer of a topological insulator material to serve as a protective layer; uniformly coating an ultraviolet positive photoresist on the protective layer; transferring a pattern of a mask to the ultraviolet positive photoresist by adopting a photoetching process; removing and etching the protective layer of the pattern by adopting a plasma glue removing machine; etching the Al2O3 layer and a Cr-doped (Bi, Sb)2Te3 layer on the topological insulator material by using an ion beam etching machine, and transferring the pattern of the mask to the topological insulator material; washing the remainingprotective layer and ultraviolet positive photoresist by using acetone and isopropanol, and drying to obtain the quantum anomalous Hall effect thin-film microstructural film. The preparation method avoids the corrosion for an Al2O3 thin film in a development stage of the general photoetching process, avoids a problem that the quantum anomalous Hall effect cannot be controlled due to the electron beam exposure charge accumulation, and successfully achieves the quantum anomalous Hall effect after micro-nano processing.

Description

technical field [0001] The invention belongs to the technical field of electronic information, and in particular relates to a quantum anomalous Hall effect thin film microstructure device and a preparation method thereof. Background technique [0002] Since Moore's Law was put forward in the 1960s, semiconductor chip technology has developed rapidly, and the degree of integration has become higher and higher. However, as the integration of circuits becomes higher and higher, the heat generated by electronic components will also become higher and higher. If there is no technical condition for good heat dissipation, this heat can burn the entire chip. Therefore, many people think that "Moore's Law" will fail. [0003] The heating of the chip is caused by electrons. On the bottom layer of the chip, under a certain potential, the current flows in a certain direction. The basic unit of the current is electrons, and electrons move in a certain direction in high-probability events...

Claims

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Application Information

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IPC IPC(8): H01L43/06H01L43/10H01L43/14
CPCH10N52/101H10N52/01H10N50/85
Inventor 高志廷李耀鑫王永超李绍锐张金松王亚愚
Owner TSINGHUA UNIV
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