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K-ion doped ZnO photocatalytic material, and preparation method and application thereof

A photocatalytic material and ion doping technology are applied in the field of K ion-doped ZnO photocatalytic material and its preparation, which can solve the problems of low fast recombination quantum yield and poor response of photocatalytic reaction to visible light, etc., so as to promote photocatalysis. The effect of improving photocatalytic activity and improving quantum efficiency

Active Publication Date: 2019-08-16
LIAONING UNIVERSITY
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Problems solved by technology

Although it has many advantages, it also has certain limitations: the photocatalytic reaction has a poor response to visible light because of its wide bandgap (3.37eV) and the low quantum yield of fast recombination of photogenerated electron-hole pairs. Its photocatalytic activity has a great inhibitory effect

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  • K-ion doped ZnO photocatalytic material, and preparation method and application thereof
  • K-ion doped ZnO photocatalytic material, and preparation method and application thereof
  • K-ion doped ZnO photocatalytic material, and preparation method and application thereof

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Embodiment 1

[0028] (1) K ion doped ZnO photocatalytic material

[0029] The preparation method is as follows:

[0030] 1) Pour 0.44g (2mmol) of zinc acetate into a beaker filled with 20ml of methanol solution, stir for 15min to fully dissolve;

[0031] 2) Grinding potassium hydroxide into powder. 2.24mg (0.04mmol) potassium hydroxide (K + The molar mass of Zn 2+ 2% of molar weight) is poured in the zinc acetate solution in stirring, continues to stir until potassium hydroxide dissolves;

[0032] 3) Put the mixed solution obtained in step 2) in an oven, dry at 80°C, and cool naturally to obtain the precursor;

[0033] 4) Grinding the precursor obtained in step 3), and then heating up to 450° C. for 2 h at a rate of 5° C. / min for high-temperature calcination to obtain the K ion-doped ZnO photocatalytic material K-ZnO.

[0034] 5) Prepare K in the same way as step 1) to step 4) + The molar mass of Zn 2+ 4%, 6%, 8%, 10% of the molar amount of K ions doped ZnO photocatalytic material. ...

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Abstract

The invention discloses a K-ion doped ZnO photocatalytic material, and a preparation method and an application thereof. The preparation method comprises the following steps: dissolving zinc salt intoan organic solvent, pouring potassium salt or potassium base with a certain molar ratio into a zinc salt solution under stirring, and continuing stirring until the potassium salt or potassium base isdissolved; placing an obtained mixed solution into an oven, and carrying out drying so as to obtain a precursor; and subjecting the precursor to high-temperature calcination so as to obtain K-ZnO. TheK-ion doped ZnO photocatalytic material prepared by using the method provided by the invention has the following advantages: the defect of low response of ZnO to visible light is improved; through the change of a band structure, the separation rate of electron holes is improved, and the recombination rate of the electron holes is reduced, so the photocatalytic activity can be effectively improved; the method has low cost, is simple and has simple operation; and the K-ion doped ZnO photocatalytic material can be utilized to degrade organic pollutants under the irradiation of the visible light.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials, and in particular relates to a K ion-doped ZnO photocatalytic material and a preparation method and application thereof. Background technique [0002] With the development of human society, the combustion of fossil fuels has caused a series of serious environmental problems, and the acquisition and conversion of solar energy into usable energy has become a key issue for human society. Photocatalytic technology is a sustainable and environmentally friendly technology. It uses sunlight to degrade organic pollutants. It has the characteristics of no secondary pollution and recyclable regeneration. In recent years, metal and non-metal composite materials have received extensive attention from researchers. ZnO is a low-cost, low-toxic metal oxide semiconductor with good electron transfer ability and strong oxidation holes under electromagnetic irradiation. Although it has many advan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/06B01D53/72B01D53/86C07C45/39C07C49/08
CPCB01D53/8668B01D2257/704B01J23/06C07C45/39C07C49/08
Inventor 范晓星成祥祥李林丽贾兰蔡鹤王晓娜
Owner LIAONING UNIVERSITY
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