Near-infrared heterojunction LED array and method for forming same
A technology of light-emitting diodes and heterojunctions, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that the preparation method of near-infrared light-emitting diodes needs to be improved, and achieve low power consumption, simple production steps, and low requirements for production equipment Effect
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Embodiment 1
[0098] A method for forming a heterojunction light emitting diode array structure includes:
[0099] (1) 8-inch P-type heavily doped silicon wafer is used as the substrate;
[0100] (2) A germanium buffer layer (with a thickness of 1.5 μm) and a germanium layer (with a thickness of 1 μm) are sequentially formed on the front surface of the substrate by using a reduced pressure epitaxial chemical vapor deposition system; wherein, the germanium buffer layer and the germanium layer are both P-type doped , with a doping concentration of 10 16 cm -3 .
[0101] (3) Micromachining the germanium layer by conventional photolithography combined with etching technology to obtain a cylindrical germanium column;
[0102] (4) Utilize the magnetron sputtering equipment to form a zinc oxide layer with a thickness of 100nm on the germanium column and the germanium buffer layer with the intrinsic zinc oxide material;
[0103] (5) Using electron beam evaporation equipment, a gold film with a th...
Embodiment 2
[0106] A method for forming a heterojunction light emitting diode array structure includes:
[0107] (1) 8-inch P-type heavily doped silicon wafer is used as the substrate;
[0108] (2) Form a buried layer with a thickness of 375nm on the surface of the substrate by using silicon dioxide material to form a silicon on insulator (SOI) structure;
[0109] (3) A germanium buffer layer (with a thickness of 1.5 μm) and a germanium layer (with a thickness of 1 μm) are sequentially formed on the front surface of the substrate by using a reduced-pressure epitaxial chemical vapor deposition system; wherein, the germanium buffer layer and the germanium layer are both P-type doped , with a doping concentration of 10 16 cm -3 .
[0110] (3) Micromachining the germanium layer by conventional photolithography combined with etching technology to obtain a cylindrical germanium column;
[0111] (4) Utilize the magnetron sputtering equipment to form a zinc oxide layer with a thickness of 50n...
Embodiment 3
[0116] A method for forming a heterojunction light emitting diode array structure includes:
[0117] (1) 8-inch P-type heavily doped silicon wafer is used as the substrate;
[0118] (2) A germanium buffer layer (with a thickness of 1.5 μm) and a germanium layer (with a thickness of 1 μm) are sequentially formed on the front surface of the substrate by using a reduced pressure epitaxial chemical vapor deposition system; wherein, the germanium buffer layer and the germanium layer are both P-type doped , with a doping concentration of 10 19 cm -3 .
[0119] (3) Micromachining the germanium layer by conventional photolithography combined with etching process to obtain trapezoidal germanium pillars;
[0120] (4) Utilize magnetron sputtering equipment to form a zinc oxide layer with a thickness of 40nm on the germanium column and the germanium buffer layer with the InGaZnO target material;
[0121] (5) Utilize electron beam evaporation equipment to form a transparent indium tin ...
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