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Composite nanometer structure and production method thereof

A composite nanostructure and nanocrystal technology, applied in the direction of nanotechnology, nanotechnology, nano-optics, etc., can solve the problems of serious surface defects, unfavorable effective separation of electrons and holes, aggravate the recombination of electrons and holes, and achieve the diffusion distance Long, long carrier diffusion distance, good structural stability

Active Publication Date: 2019-08-30
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, II-VI semiconductor quantum dots are limited by their size (2-10nm), and the surface defects are serious, which intensifies the recombination of electrons and holes, which is not conducive to the effective separation of electrons and holes.

Method used

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  • Composite nanometer structure and production method thereof

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Embodiment 1

[0043] (1) Preparation of CdSeTe quantum dots by aqueous phase method: sodium borohydride, selenium powder, tellurium powder, Cd(NO 3 ) 2 As a raw material, thioglycolic acid was used as a stabilizer to prepare a CdSeTe quantum dot colloidal solution in a nitrogen atmosphere, and the same volume of acetone was added to the clear and transparent solution obtained by the reaction, and centrifuged to obtain a CdSeTe powder sample, which was composed of CdSeTe 0.25 Te 0.75 ;

[0044] (2) Take 367mg PbBr 2 Dissolve in 5mL toluene, dissolve at 80°C for 30min, make it fully dissolved, and obtain solution Ⅰ;

[0045] (3) Dissolve 56mg of methylammonium bromide (CAS No. 6876-37-5) into 1mL of DMF (N,N-dimethylformamide), and stir until it is completely dissolved to obtain solution II;

[0046] (4) Take 210mg of CdSeTe (0.92mmol) quantum dot powder, add it to the solution II of step (3), and add 0.1mL (0.315mmol) oleic acid and 0.05mL (0.15mmol) oleylamine, and ultrasonically react ...

Embodiment 2

[0059] (1) Preparation of CdSe quantum dots by aqueous phase method: sodium borohydride, selenium powder, Cd(NO 3 ) 2 As a raw material, using thioglycolic acid as a stabilizer, in a nitrogen atmosphere, prepare a CdSe quantum dot colloidal solution, add the same volume of acetone to the clear and transparent solution obtained by the reaction, and centrifuge to obtain a CdSe powder sample;

[0060] (2) 367mg PbBr 2 Dissolve in 5mL toluene, dissolve at 80°C for 30min, make it fully dissolved, and obtain solution Ⅰ;

[0061] (3) Dissolve 56mg of methylammonium bromide in 1mL of DMF (N,N-dimethylformamide), and stir until it is completely dissolved to obtain solution II;

[0062] (4) Take 191 mg of CdSe quantum dot powder, add it to the solution II of step (3), and add 0.1 mL oleic acid and 0.05 mL oleylamine, and ultrasonically react for 30 minutes to obtain a mixed solution;

[0063] (5) Add the mixed solution into solution I, the volume ratio of the two is 1:5, and stir mag...

Embodiment 3

[0066] (1) Preparation of CdTe quantum dots by aqueous phase method: sodium borohydride, tellurium powder, Cd(NO 3 ) 2 As a raw material, using thioglycolic acid as a stabilizer, in a nitrogen atmosphere, prepare a CdTe quantum dot colloidal solution, add the same volume of acetone to the clear and transparent solution obtained by the reaction, and centrifuge to obtain a CdTe powder sample;

[0067] (2) 367mg PbBr 2 Dissolve in 5mL toluene, dissolve at 80°C for 30min, make it fully dissolved, and obtain solution Ⅰ;

[0068] (3) Dissolve 56mg of methylammonium bromide in 1mL of DMF (N,N-dimethylformamide), and stir until it is completely dissolved to obtain solution II;

[0069] (4) Take 230 mg of CdTe quantum dot powder, add it to the solution of step (3), and add 0.1 mL of oleic acid and 0.05 mL of oleylamine, and ultrasonically react for 30 minutes to obtain a mixed solution;

[0070] (5) Add the mixed solution to solution I, the volume ratio of the two is 1:5, and stir m...

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Abstract

The invention discloses a composite nanometer structure and a production method thereof. The composite nanometer structure comprises organic-inorganic hybrid perovskite nanocrystallines and semiconductor quantum dots which are embedded into the organic-inorganic hybrid perovskite nanocrystallines; and a structural formula of the organic-inorganic hybrid perovskite nanocrystallines is CH3NH3PbX3, and X is selected from Cl, Br and I. The production method comprises the steps of evenly mixing lead halide and an organic solvent A to obtain a solution I; evenly mixing methyl ammonium halide and anorganic solvent B to obtain a solution II; adding the semiconductor quantum dots into the solution II, then adding a ligand, and evenly dispersing an obtained mixture to obtain a mixed solution; and then mixing the mixed solution and the solution I, and carrying out a reaction to obtain the composite nanometer structure. The composite nanometer structure produced through technology optimization can increase diffusion distance of photo-induced electrons and holes, can inhibit compounding of semiconductor quantum dot surfaces of the electrons and the holes, and can be used for a wide variety offields of solar cells, photocatalysis and the like.

Description

technical field [0001] The invention relates to the technical field of nano functional materials, in particular to a composite nano structure and a preparation method thereof. Background technique [0002] Quantum dots (quantum dots), also known as semiconductor nanocrystals, have three-dimensional dimensions smaller than their Bohr excitonic radius, generally 2-20 nm. Now the main quantum dots are traditional II-VI group elements and II-VI group semiconductor quantum dots, which can adjust the range of emitted light in the visible light region as the size changes, and have high quantum efficiency. II–VI semiconductor quantum dots have obvious advantages, such as simple preparation method, excitation spectrum can cover the entire visible light region, narrow half-maximum width, and stability, etc., which have become one of the research hotspots in the field of quantum dots. However, II-VI semiconductor quantum dots are limited by their size (2-10nm), and the surface defects...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/06C09K11/88B82Y20/00B82Y30/00B82Y40/00B01J31/22
CPCC09K11/02C09K11/06C09K11/883B82Y20/00B82Y30/00B82Y40/00B01J31/1805B01J2531/44B01J35/23B01J35/39
Inventor 赵高凌李华正涂佳棋王路超姚悦卢王威韩高荣
Owner ZHEJIANG UNIV
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