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Barium copper tellurium based p-type thermoelectric material and preparation method thereof

A thermoelectric material, p-type technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problem of low thermoelectric conversion efficiency and so on

Active Publication Date: 2022-07-08
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the research on the Zintl phase is still in its infancy, and the thermoelectric conversion efficiency found is still very low.

Method used

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  • Barium copper tellurium based p-type thermoelectric material and preparation method thereof
  • Barium copper tellurium based p-type thermoelectric material and preparation method thereof
  • Barium copper tellurium based p-type thermoelectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0024] Example 1: In a glove box filled with argon atmosphere, weigh out barium particles (99.5%), copper chips (99.999%), tellurium particles (99.999%), and mix them according to the molar ratio of 1:2-δ:2 , put the raw material into an amorphous carbon crucible or a boron nitride crucible and encapsulate it in a quartz tube. Vacuum the quartz tube with a vacuum pump until the vacuum degree is lower than 1Х10 -6 Seal with oxyhydrogen flame during torr. The melting process was carried out in a box-type heating furnace, heated to 800 °C at 1 °C / min, then kept for 7 days and cooled with the furnace. The product was confirmed to be BaCu by XRD powder comparison. 2 Te 2 pure phase ( Figure 5 ). The product is hot-pressed and sintered to form the ground powder. The hot pressing conditions are 600° C., 70-80 MPa, and the holding time is 30 minutes. The density of the obtained sample is above 95%. Then measure the thermal conductivity, electrical conductivity, Seebeck coeffi...

Embodiment 2

[0025] Example 2: In a glove box filled with argon atmosphere, weigh out barium particles (99.5%), copper chips (99.999%), tellurium particles (99.999%) and selenium powder (99.9999%), according to 1:2:2 - The molar ratio of b:b, put the raw material into an amorphous carbon crucible or a boron nitride crucible, and encapsulate it in a quartz tube. Vacuum the quartz tube with a vacuum pump until the vacuum degree is lower than 1Х10 - 6Seal with oxyhydrogen flame during torr. The melting process was carried out in a box-type heating furnace, heated to 800 °C at 1 °C / min, then kept for 7 days and cooled with the furnace. The product is hot-pressed and sintered to form the ground powder. The hot pressing conditions are 600° C., 70-80 MPa, and the holding time is 30 minutes. The density of the obtained sample is above 95%. Then measure the thermal conductivity, electrical conductivity, Seebeck coefficient, thermoelectric figure of merit of the sample in the range of 300-770K,...

Embodiment 3

[0026] Example 3: In a glove box filled with an argon atmosphere, weigh out barium particles (99.5%), copper sheets (99.999%), anhydrous copper chloride (CuCl 2 , 99.5%), tellurium particles (99.999%), according to the molar ratio of 1:2-b / 2:b / 2:2, put the raw materials into an amorphous carbon crucible or a boron nitride crucible, and encapsulate it in in a quartz tube. Vacuum the quartz tube with a vacuum pump until the vacuum degree is lower than 1Х10 -6 Seal with oxyhydrogen flame during torr. The melting process was carried out in a box-type heating furnace, heated to 800 °C at 1 °C / min, then kept for 7 days and cooled with the furnace. The product is hot-pressed and sintered to form the ground powder. The hot pressing conditions are 600° C., 70-80 MPa, and the holding time is 30 minutes. The density of the obtained sample is above 95%. Then measure the thermal conductivity, electrical conductivity, Seebeck coefficient, thermoelectric figure of merit of the sample in...

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Abstract

The invention relates to a barium copper tellurium-based p-type thermoelectric material and a preparation method thereof. The present invention relates to compounds represented by the following general formula: Ba 1‑x R x Cu a Te 2‑z Q z , where R is the element Ca or Sr, X is the actual composition of R doping, in the range of 0≤x≤0.1; a is the actual composition of the element Cu, in the range of 1.90≤a≤2.10; Q is the element Se and Cl At least one of, z is the actual composition of the Q doping, in the range of 0≤z≤0.3. Using solid-phase synthesis under vacuum or inert atmosphere, rapid plasma sintering (SPS) or hot-pressing sintering methods for the preparation of dense ceramic samples. The obtained barium-copper-tellurium-based pure sample has a ZT value of 0.85, and the barium-copper-tellurium-based thermoelectric performance is further improved with trace doping elements, which can be used in the field of thermoelectric conversion power generation or refrigeration.

Description

technical field [0001] The invention belongs to the field of thermoelectric conversion materials, and relates to a barium copper tellurium-based p-type thermoelectric material and a preparation method thereof. The material has excellent thermoelectric properties in the temperature region around 800K. Background technique [0002] Thermoelectric conversion technology utilizes the Seebeck effect and Peltier effect of semiconductor materials to realize the direct mutual conversion of thermal energy and electrical energy, including thermoelectric power generation and thermoelectric cooling, which is expected to improve energy utilization and alleviate environmental pollution. The problem provides an approach to comprehensive coordination: Goldsmid, HJ, Electronic Reference, Pion Limited, 1986). Thermoelectric devices have the characteristics of small system size, high reliability, no emission of pollutants, and a wide range of applicable temperatures. As a special power supply...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/22H01L35/34H10N10/852H10N10/01H10N10/855
CPCH10N10/855H10N10/852H10N10/01
Inventor 郭凯林建伟隋超杨昕昕赵景泰
Owner SHANGHAI UNIV