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Simple and efficient preparation method for silicon nickel cobalt iron photoanode

A photoanode, NiCoFe technology, applied in the field of preparation of SiNiCoFe photoanode, can solve the problems of restricting large-scale mass production and high difficulty in operation, achieving controllable synthesis rate, good repeatability and strong controllability Effect

Inactive Publication Date: 2019-09-27
XI'AN PETROLEUM UNIVERSITY
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Problems solved by technology

[0004] The purpose of the present invention is to provide a simple and efficient method for preparing a silicon-nickel-cobalt-iron photoanode, so as to solve technical problems in the prior art such as high difficulty in the preparation process of silicon photoanodes and restrictions on large-scale batch production.

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  • Simple and efficient preparation method for silicon nickel cobalt iron photoanode
  • Simple and efficient preparation method for silicon nickel cobalt iron photoanode
  • Simple and efficient preparation method for silicon nickel cobalt iron photoanode

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preparation example Construction

[0042] A simple and efficient preparation method of silicon nickel cobalt iron photoanode includes the following steps:

[0043] S1. Dissolve nickel sulfate, cobalt sulfate, and ferrous sulfate in deionized water, purge and stir, and configure to form an electrodeposition solution;

[0044] S2. Immerse the packaged silicon photoanode in the electrodeposition solution configured in step S1, and perform electrodeposition in the constant current mode of the electrochemical workstation to obtain the target product: silicon / nickel-cobalt-iron photoanode.

[0045] As a further solution, the specific configuration method of the electrodeposition solution in step S1 is: dissolving a mol of nickel sulfate, b mol of cobalt sulfate, and cm of ferrous sulfate in 100 mL of deionized water, and venting nitrogen or argon. Purge and stir for 10-20 minutes to form an electrodeposition solution, where a+b+c=0.01 mol, a is 0.002 to 0.009, b is 0.0005 to 0.004, and c is 0.0005 to 0.004.

[0046] As a fur...

Embodiment 1

[0051] Example 1: Please refer to Figure 1-2 .

[0052] 1) Dissolve 0.002mol of nickel sulfate, 0.004mol of cobalt sulfate, and 0.004mol of ferrous sulfate in 100mL of deionized water to obtain a mixed solution of nickel sulfate, cobalt sulfate, and ferrous sulfate in deionized water, and blow with nitrogen or argon. Sweep and stir for 10min;

[0053] 2) Extend the sealed silicon photoanode (working electrode), silver / silver chloride electrode (reference electrode) and platinum electrode (counter electrode) into 3cm below the liquid surface of the deionized water mixed solution for electrodeposition;

[0054] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1mA / cm 2 , The deposition time is 1000s, and the deposition temperature is 20°C. After the electrodeposition, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 30 seconds to obtain the target product.

Embodiment 2

[0055] Example 2: Please refer to Figure 3-4 .

[0056] 1) Dissolve 0.005 mol of nickel sulfate, 0.0025 mol of cobalt sulfate, and 0.0025 mol of ferrous sulfate in 100 mL of deionized water to obtain a mixed solution of nickel sulfate, cobalt sulfate, and ferrous sulfate in deionized water, and blow nitrogen or argon. Sweep and stir for 10min;

[0057] 2) Extend the sealed silicon photoanode (working electrode), silver / silver chloride electrode (reference electrode) and platinum electrode (counter electrode) into 3cm below the liquid surface of the deionized water mixed solution for electrodeposition;

[0058] 3) When performing electrodeposition, set the electrochemical workstation to constant current mode, and the current density is 1mA / cm 2 , The deposition time is 1000s, and the deposition temperature is 20°C. After the electrodeposition, the silicon / nickel-cobalt-iron photoanode was rinsed with deionized water for 30 seconds to obtain the target product.

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Abstract

The invention discloses a simple and efficient preparation method for a silicon-nickel-cobalt iron photoanode. The method comprises the following steps that S1, nickel sulfate, cobalt sulfate and ferrous sulfate are dissolved in deionized water, purging and stirring are performed, and electrodeposition liquid is formed after configuring; S2, the packaged silicon photoanode is immersed in the electrodeposition liquid configured in the step S1 and electrodeposited in a constant current mode of an electrochemical workstation, and the target product of the silicon / nickel cobalt iron photoanode is obtained. The whole preparation process has the beneficial effects of simple operation, strong controllability, good repeatability, low raw materials, wide sources, no heavy metal pollution, green safety and environmental protection, improved production efficiency and reduced production cost and is suitable for mass production.

Description

Technical field [0001] The present invention relates to the technical field of photovoltaic materials, in particular to a simple and efficient silicon nickel cobalt iron photoanode (p + n-Si / NiCoFe) preparation method. Background technique [0002] Compared with other semiconductor photocatalysts, silicon has abundant reserves on the earth, easy to obtain and low price. In addition, its band gap width of 1.12eV matches the sunlight spectrum very well, and it has good photoresponse in visible light and even far infrared light. , Which is conducive to the efficient use of solar energy, has been widely used in the photovoltaic industry, and has huge potential application value in the field of new photoelectric catalysis technologies. [0003] However, the "pinning effect" of silicon itself causes the slow charge transfer kinetics on its surface to limit the separation and transfer of photogenerated carriers; and as a photoanode reacts in alkaline solution, its surface is prone to phot...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/56H01G9/20
CPCC25D3/56H01G9/2045Y02E10/542Y02P70/50
Inventor 孔婷婷何林云黄剑
Owner XI'AN PETROLEUM UNIVERSITY