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Compound, resin, composition, pattern forming method and purification method

A compound and carbon number technology, applied in the field of material purification, can solve the problems of resist pattern collapse, resolution problems, and difficulty in obtaining resist patterns, etc.

Inactive Publication Date: 2019-10-11
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the resist pattern is miniaturized, problems such as resolution problems and the collapse of the resist pattern after development occur, so thinning of the resist is desired.
In response to such a desire, it becomes difficult to obtain a film thickness of a resist pattern sufficient for substrate processing only by reducing the thickness of the resist

Method used

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  • Compound, resin, composition, pattern forming method and purification method
  • Compound, resin, composition, pattern forming method and purification method
  • Compound, resin, composition, pattern forming method and purification method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0490] Hereinafter, an Example is given and the embodiment of this invention is demonstrated more concretely. However, the present embodiment is not particularly limited to these examples.

[0491] The analysis and evaluation methods of the compounds are as follows.

[0492]

[0493] The molecular weight of the compound was measured by LC-MS analysis using Acquity UPLC / MALDI-Synapt HDMS manufactured by Water Corporation.

[0494]

[0495] Using an EXSTAR6000DSC device manufactured by SII NanoTechnology Inc., about 5 mg of the sample was placed in an aluminum non-sealed container, and the temperature was raised to 500°C at a heating rate of 10°C / min in a nitrogen (30ml / min) flow. At this time, the temperature at which a decrease in the base line appeared was taken as the thermal decomposition temperature.

[0496]

[0497] Using an EXSTAR6000DSC device manufactured by SII NanoTechnology Inc., about 5 mg of the sample was placed in an aluminum non-sealed container, and t...

manufacture example 1

[0530] A four-neck flask with an inner volume of 10 L whose bottom can be removed, equipped with a serpentine condenser, a thermometer, and a stirring blade, was prepared. In this four-necked flask, 1.09 kg (7 mol, manufactured by Mitsubishi Gas Chemical Co., Ltd.) of 1,5-dimethylnaphthalene and 2.1 kg of 40% by mass formalin aqueous solution (28 mol as formaldehyde) were charged in a nitrogen stream. , manufactured by Mitsubishi Gas Chemical Co., Ltd.) and 0.97 mL of 98% by mass sulfuric acid (manufactured by Kanto Chemical Co., Ltd.), were reacted under normal pressure while refluxing at 100° C. for 7 hours. Thereafter, 1.8 kg of ethylbenzene (special grade, manufactured by Wako Pure Chemical Industries, Ltd.) was added as a diluting solvent to the reaction solution, and the lower aqueous phase was removed after standing still. Further, neutralization and water washing were performed, and ethylbenzene and unreacted 1,5-dimethylnaphthalene were distilled off under reduced pre...

Embodiment 1～20

[0533] Table 3 shows the results of evaluating the solubility to propylene glycol monomethyl ether (PGME) using BisP-1 to BisP-18, R1-BisP-1, and R2-BisP-2.

[0534] [table 3]

[0535] table 3

[0536] compound Solubility evaluation results Example 1 BisP-1 A Example 2 BisP-2 A Example 3 BisP-3 A Example 4 BisP-4 A Example 5 BisP-5 A Example 6 BisP-6 A Example 7 BisP-7 A Example 8 BisP-8 A Example 9 BisP-9 A Example 10 BisP-10 A Example 11 BisP-11 A Example 12 BisP-12 A Example 13 BisP-13 A Example 14 BisP-14 A Example 15 BisP-15 A Example 16 BisP-16 A Example 17 BisP-17 A Example 18 BisP-18 A Example 19 R1-BisP-1 A Example 20 R2-BisP-1 A

[0537] From Table 3, it was clearly confirmed that the compounds used in Examples 1 to 20 were all excellent in solubility to solvents.

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Abstract

Provided are a compound, a resin and a composition, each of which has excellent solubility in a solvent and is applicable to a wet process, thereby being useful for the formation of a film for lithography having excellent heat resistance and etching resistance. Also provided is a pattern forming method which uses said composition. Additionally provided is a purification method of said compound andresin. The present invention uses a composition which contains a compound that has a specific structure and / or a resin that has a constituent unit derived from the compound.

Description

technical field [0001] The present invention relates to a compound having a specific structure, a resin, a composition containing them, a method of forming a pattern using the composition, and a method of purifying a substance. Background technique [0002] In the manufacture of semiconductor devices, microfabrication by photolithography using photoresist materials is performed, and in recent years, along with higher integration and higher speed of LSIs, further miniaturization by pattern rules is required. In photolithography using light exposure, which is currently a general-purpose technique, the resolution limit derived from the nature of the wavelength of the light source is gradually approaching. [0003] The light source for lithography used in resist pattern formation was shortened from KrF excimer laser light (248 nm) to ArF excimer laser light (193 nm). However, as the resist pattern is miniaturized, problems such as resolution problems and resist pattern collapse...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C39/15C07C39/17G03F7/023G03F7/11G03F7/20G03F7/26G03F7/039
CPCC07C39/15C07C39/17C09B11/06G03F7/0007G03F7/0226G03F7/0752G03F7/094G03F7/16G03F7/0045G03F7/162
Inventor 三树泰牧野岛高史越后雅敏
Owner MITSUBISHI GAS CHEM CO INC