MSM-type (GaMe)2O3 ternary-alloy solar-blind ultraviolet light detector and preparation method thereof

A ternary alloy and detector technology, which is applied in the field of MSM type 2O3 ternary alloy solar-blind ultraviolet light detector and its preparation, can solve the problems of crystal quality decline, device performance and stability, etc. The effect of improving detection capability and facilitating large-scale preparation

Active Publication Date: 2019-10-15
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to realize the detection of solar-blind ultraviolet light, the band gap of the active layer semiconductor material must be greater than 4.4eV, while MgZnO and AlGaN increase the band gap to 4.4eV by increasing the Mg and Al content respectively, which will make the crystal quality significantly decline, will greatly reduce the performance and stability of the device

Method used

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  • MSM-type (GaMe)2O3 ternary-alloy solar-blind ultraviolet light detector and preparation method thereof
  • MSM-type (GaMe)2O3 ternary-alloy solar-blind ultraviolet light detector and preparation method thereof
  • MSM-type (GaMe)2O3 ternary-alloy solar-blind ultraviolet light detector and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0054] Such as figure 1 As shown, a kind of (GaLu) based 2 o 3 A sun-blind ultraviolet light detector of a ternary alloy thin film, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal Au electrodes from bottom to top, wherein: the active layer is (-201) Oriented (GaLu) 2 o 3 Ternary alloy film. The thickness of the substrate is 0.43 mm, the thickness of the active layer is 150 nm, the thickness of the Au electrodes is 50 nm, and the distance between the parallel electrodes is 10 μm.

[0055] In this embodiment, the above-mentioned (GaLu) based 2 o 3 The sun-blind ultraviolet light detector of the ternary alloy thin film is prepared by the following method, including the following steps:

[0056] Step 1: Preparation by solid phase sintering (GaLu) 2 o 3 Ternary ceramic target

[0057] 1.1 molar ratio Ga 2 o 3 : Lu 2 o 3 =70:30, weigh 5.236g Ga 2 o 3 powder and 4.763g Lu 2 o 3 Powder, after mixing, add 15g of deioni...

Embodiment 2

[0069] A kind of (GaLu) based on the present embodiment 2 o 3 A sun-blind ultraviolet light detector of a ternary alloy, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal Au electrodes from bottom to top, wherein: the active layer is (GaLu) 2 o 3 For the ternary alloy film, the thickness of the substrate is 0.43mm, the thickness of the active layer is 150nm, the thickness of the electrodes is 55nm, and the distance between the parallel electrodes is 10μm.

[0070] In this embodiment, the above-mentioned (GaLu) based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0071] Step 1: Preparation by solid phase sintering (GaLu) 2 o 3 Ternary ceramic target

[0072] 1.1 molar ratio Ga 2 o 3 : Lu 2 o 3 =95:5, weigh 8.995g Ga 2 o 3 powder and 1.005g Lu 2 o 3 Powder, after mixing, add 15g of deionized water, then place in the ball mill jar (the bal...

Embodiment 3

[0081] A kind of (GaLu) based on the present embodiment 2 o 3 A sun-blind ultraviolet light detector of a ternary alloy, the detector includes a c-plane sapphire substrate, an active layer, and a pair of parallel metal Au electrodes from bottom to top, wherein: the active layer is (GaLu) 2 o 3 For the ternary alloy thin film, the thickness of the substrate is 0.43mm, the thickness of the active layer is 300nm, the thickness of the electrodes is 30nm, and the distance between the parallel electrodes is 50μm.

[0082] In this embodiment, the above-mentioned (GaLu) based 2 o 3 The thin-film sun-blind ultraviolet light detector is prepared by the following method, including the following steps:

[0083] Step 1: Prepare (GaLu) by the same solid phase sintering method as in Example 1 2 o 3 Ternary ceramic target;

[0084] Step 2: Utilize (GaLu) 2 o 3 Preparation of solar-blind ultraviolet light detectors with ternary ceramic targets

[0085] 2.1 (GaLu) prepared in step 1 ...

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Abstract

The invention discloses an MSM-type (GaMe)2O3 ternary-alloy solar-blind ultraviolet light detector and a preparation method thereof. The detector comprises a c-surface sapphire substrate, an active layer and a parallel metal electrode from the bottom up in sequence, wherein the active layer is a (GaMe)2O3 ternary-alloy thin film. The band gap (5.5eV) of Me2O3 is larger than the band gap (4.9eV) ofGa2O3, and Me<3+> ions are used to partially replace Ga<3+> ions to obtain a (GaMe)2O3 ternary alloy so as to improve the band gap of Ga2O3 and to reduce dark current of the device; and cut-off wavelength is blue shifted to be within 280nm, thereby improving detection capability of the device for deep ultraviolet light. The MSM-structure solar-blind ultraviolet light detector is simple in structure and the preparation process is simple; the dark current is smaller than 0.2pA; device relaxation response time taud2 can be as low as 0.190s; and the response speed is fast and performance is stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detectors, in particular to a solar-blind ultraviolet light detector with an MSM structure, more specifically, the invention relates to an MSM type (GaMe) 2 o 3 A ternary alloy sun-blind ultraviolet light detector and a preparation method thereof. Background technique [0002] Since the deep ultraviolet part (200-280nm) in sunlight will be strongly absorbed by the ozone layer before reaching the earth's surface, the solar-blind ultraviolet photodetector has the characteristics of strong anti-interference ability and high sensitivity when working on the earth's surface. It has very important applications in military and people's livelihood fields such as missile early warning, ultraviolet communication, fire prevention and control, and environmental monitoring. Traditional vacuum ultraviolet photomultiplier tube detectors have high power consumption and high price. Solar-blind ultraviolet p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/032H01L31/0216H01L31/18
CPCH01L31/02161H01L31/0322H01L31/1085H01L31/1876Y02E10/541Y02P70/50
Inventor 何云斌王其乐黎明锴黄攀卢寅梅常钢张清风李派陈俊年
Owner HUBEI UNIV
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