Preparation method and application of silicon carbide ceramic-based nano-composite material

A nanocomposite, silicon carbide ceramic-based technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as hindering practical application, volume expansion, poor conductivity, etc., to promote diffusion. and electron transfer, enhance conductivity, and achieve the effect of stability

Inactive Publication Date: 2019-11-08
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its volume expansion is severe during cycling and its conductivity is poor, which seriously hinders its practical application.

Method used

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  • Preparation method and application of silicon carbide ceramic-based nano-composite material
  • Preparation method and application of silicon carbide ceramic-based nano-composite material
  • Preparation method and application of silicon carbide ceramic-based nano-composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Take the industrial silicon block and place it on the copper base as the anode, and the graphite rod as the cathode, and adjust the distance between the two electrodes to 30mm. Vacuum the reaction chamber to about 10 -2 Pa, filled with argon and hydrogen at a ratio of 2:1 to reach 2×10 4 Pa and 1×10 4 Pa, then filled with 0.25×10 4 Pa methane gas, turn on the cooling water system, turn on the power and start the arc, adjust the current and the distance between the poles and stabilize the arc, evaporate the bulk silicon target material into silicon atoms, react with the carbon atoms decomposed from methane gas, nucleate and grow and gather The nano-powder is deposited on the wall of the reaction chamber, and the powder is collected through a passivation process to obtain a silicon carbide ceramic matrix nano-composite material.

[0027] The prepared silicon carbide ceramic-based nanocomposite material was used as an active material, mixed with a conductive agent and a...

Embodiment 2

[0029] Take the industrial silicon block and place it on the copper base as the anode, and the graphite rod as the cathode, and adjust the distance between the two electrodes to 30mm. Vacuum the reaction chamber to about 10 -2 Pa, filled with argon and hydrogen at a ratio of 2:1 to reach 2×10 4 Pa and 1×10 4 Pa, then filled with 0.5×10 4 Pa methane gas, turn on the cooling water system, turn on the power and start the arc, adjust the current and the distance between the poles and stabilize the arc, evaporate the bulk silicon target material into silicon atoms, react with the carbon atoms decomposed from methane gas, nucleate and grow and gather The nano-powder is deposited on the wall of the reaction chamber, and the powder is collected through a passivation process to obtain a silicon carbide ceramic matrix nano-composite material.

[0030] The prepared silicon carbide ceramic-based nanocomposite material was used as an active material, mixed with a conductive agent and a ...

Embodiment 3

[0032] Take the industrial silicon block and place it on the copper base as the anode, and the graphite rod as the cathode, and adjust the distance between the two electrodes to 30mm. Vacuum the reaction chamber to about 10 -2 Pa, filled with argon and hydrogen at a ratio of 2:1 to reach 2×10 4 Pa and 1×10 4 Pa, then filled with 1×10 4 Pa methane gas, turn on the cooling water system, turn on the power and start the arc, adjust the current and the distance between the poles and stabilize the arc, evaporate the bulk silicon target material into silicon atoms, react with the carbon atoms decomposed from methane gas, nucleate and grow and gather The nano-powder is deposited on the wall of the reaction chamber, and the powder is collected through a passivation process to obtain a silicon carbide ceramic matrix nano-composite material.

[0033] The prepared silicon carbide ceramic-based nanocomposite material was used as an active material, mixed with a conductive agent and a bi...

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Abstract

The invention discloses a preparation method and application of a silicon carbide ceramic-based nano-composite material, and belongs to the technical field of nano material preparation and application. The method comprises the steps of: introducing, by an automatic control DC arc plasma device, a mixed atmosphere of an inert gas and hydrogen by using an industrial silicon block as an anode and a graphite rod as a cathode, and then introducing gaseous carbon source methane, acetylene or ethanol, evaporating the raw materials to obtain the silicon carbide ceramic-based nano-composite material; mixing the silicon carbide ceramic-based nano-composite material with a conductive agent and a binder to prepare an electrode to be used as a negative electrode material of a lithium ion battery, assembling the negative electrode material of the lithium ion battery into a cell lithium ion battery, performing an electrochemical performance test such that the cell lithium ion battery can exhibit excellent electrochemical performance. The silicon carbide ceramic-based nano-composite material has a simple preparation process and can realize industrial production. When applied to the negative electrode material of the lithium ion battery, the silicon carbide ceramic-based nano-composite material can realize stabile electrochemical cycle performance and a large-current charge-discharge capability. By processes of current, voltage, atmosphere type and gas pressure ratio thereof, passivation, screening, the method achieves control of the sizes, the distribution, and shapes of nano-powders.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation technology and application, and relates to a preparation method of a silicon carbide ceramic-based nanocomposite material and its application in lithium-ion battery negative electrode materials. Background technique [0002] Silicon carbide is an important semiconductor material. Due to the strong covalent bond between carbon atoms and silicon atoms, it has high thermal conductivity, high hardness, high temperature stability, and chemical corrosion resistance, and can be used in harsh environments . As a wide bandgap semiconductor material (2.4-3.3eV), its on-state resistance is small, the leakage current is extremely small, and the PN junction withstand voltage is high. For a long time, due to its unique physical and chemical properties, silicon carbide materials have been used in new power semiconductor devices, such as the production of various integrated circuits, gate circuit insulati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/583B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01M4/364H01M4/583Y02E60/10
Inventor 董星龙梁静爽
Owner DALIAN UNIV OF TECH
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