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A method and device for effectively releasing latent heat of gallium arsenide single crystal crystallization

A technology of latent heat of crystallization and gallium arsenide, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve problems such as long cycle, and achieve the effects of low cost, energy saving and simple device structure

Active Publication Date: 2021-08-24
广东先导微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The commonly used annealing method is to move the PBN crucible to a constant temperature area after all the crystallization of the melt is completed, and keep it in the range of 900-1100°C for dozens of hours to eliminate the stress inside the crystal, and then control the cooling rate to 30-70°C. ℃ / h, down to room temperature, longer period

Method used

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  • A method and device for effectively releasing latent heat of gallium arsenide single crystal crystallization
  • A method and device for effectively releasing latent heat of gallium arsenide single crystal crystallization
  • A method and device for effectively releasing latent heat of gallium arsenide single crystal crystallization

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preparation example Construction

[0054] The preparation method of the support base 5 specifically includes the following steps:

[0055] 1) Select a wet felt with the required size and thickness, apply high temperature resistant cement on the surface of the wet felt to form a cylinder, and remove the water to obtain the inner furnace jacket 53 and the outer furnace jacket 55 respectively;

[0056] 2) Set the furnace core 51 , the inner quartz tube 52 , the inner furnace jacket 53 , the outer quartz tube 54 and the outer furnace jacket 55 sequentially from the inside to the outside to form the supporting base 5 .

Embodiment 1

[0058] A method for effectively releasing latent heat of gallium arsenide single crystal crystallization, comprising the following steps:

[0059] (1) Preparation of the furnace jacket: Cut a wet felt with a specific shape and thickness, apply an appropriate amount of high-temperature-resistant cement on its surface, use a cylindrical cylinder as a mold, curl the wet felt to form a wet felt cylinder, and place it on the wet felt circle. Apply high-temperature cement to the joint of the cylinder again to make the joint tightly sealed; then remove the film, dry it at room temperature, and bake it in an oven at 1200°C to remove excess water, and obtain the inner furnace jacket and the outer furnace jacket respectively. The outer diameter of the prepared outer furnace jacket is 5.0 inches, the inner diameter is 4.5 inches, and the outer diameter of the inner furnace jacket is 4.0 inches, and the inner diameter is 3.5 inches.

[0060] (1) After loading the gallium arsenide seed cry...

Embodiment 2

[0065] A method for effectively releasing latent heat of gallium arsenide single crystal crystallization, comprising the following steps:

[0066] (1) Preparation of the furnace jacket: Cut a wet felt with a specific shape and thickness, apply an appropriate amount of high-temperature-resistant cement on its surface, use a cylindrical cylinder as a mold, curl the wet felt to form a wet felt cylinder, and place it on the wet felt circle. Apply high-temperature cement to the joint of the cylinder again to make the joint tightly sealed; then remove the film, dry it at room temperature, and bake it in an oven at 1200°C to remove excess water, and obtain the inner furnace jacket and the outer furnace jacket respectively. The outer diameter of the prepared outer furnace jacket is 5.0 inches, the inner diameter is 4.5 inches, and the outer diameter of the inner furnace jacket is 4.0 inches, and the inner diameter is 3.5 inches.

[0067] (1) After loading the gallium arsenide seed cry...

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Abstract

The invention discloses a method and a device for effectively releasing latent heat of gallium arsenide single crystal crystal. The device includes a quartz ampoule, a support base and a support platform; the quartz ampoule is placed on the upper end of the support base, the support base is placed on the support platform, and is fixedly connected to the support platform; a furnace core is provided inside the support base, The furnace core is equipped with a heat dissipation rod, and the heat dissipation rod is inserted into the furnace core and is detachably connected with the support platform. contact with the lower end of the bottle. In the equal-diameter growth stage, when the equal-diameter grows to 50mm, use the heat-dissipating rod to contact the lower end of the quartz ampoule upwards, and use the heat-dissipating rod to slowly release the excess heat of the latent heat of crystallization through heat radiation and heat conduction. After the crystal growth is completed , no need for in-situ annealing to reduce the thermal stress of the crystal.

Description

technical field [0001] The invention relates to the field of single crystal growth, in particular to a method and device for effectively releasing latent heat of gallium arsenide single crystal crystallization. Background technique [0002] Important semiconductor materials such as Si, GaAs, and InP are usually prepared using melt growth techniques, such as: pulling (Cz), partial liquid encapsulation (LEC) and vertical gradient solidification (VGF). The properties of crystallization defects in crystals are closely related to the selected growth techniques. Crystals grown by different growth techniques or methods often have specific crystallization defects, which constitute the diversity of crystallization defects. For example, for crystals grown by the crucible descent method, inclusions are the main crystallization defects, including inclusions of impurity particles, cavities left in the crystal by the sublimation of encapsulated substances at high temperatures, etc.; For ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/20C30B29/42
CPCC30B15/20C30B29/42
Inventor 易明辉韩家贤
Owner 广东先导微电子科技有限公司