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A kind of preparation method and battery of full back contact IBC battery based on laser diffusion

A technology of full back contact and laser diffusion, applied in the field of solar cells, can solve the problems of complex preparation process of IBC cells, unsuitable for low-cost mass production, and high cost.

Active Publication Date: 2021-08-06
TONGWEI SOLAR ENERGY MEISHAN CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to: in order to solve the technical problems that the existing IBC battery preparation process is complicated, the cost is high, and it is not suitable for low-cost large-scale production, the present invention provides a method for preparing a full back contact IBC battery based on laser diffusion and its battery

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  • A kind of preparation method and battery of full back contact IBC battery based on laser diffusion

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Embodiment 1

[0037] Such as figure 1 As shown, this embodiment provides a method for preparing a full back contact IBC battery based on laser diffusion, comprising the following steps:

[0038] S1: Alkali texturing: select an N-type monocrystalline silicon wafer, and use hot alkali to make texturing on both sides, so that the front and back of the N-type monocrystalline silicon wafer form a textured layer;

[0039] S2: P diffusion: double-sided or single-sided P diffusion of N-type single crystal silicon wafers with phosphorus source to form FSF on the front side of N-type single crystal silicon wafers;

[0040] S3: Edge isolation: Use a mixed solution of HF and HN03 to remove the back and edge junctions of the N-type single crystal silicon wafer, and only keep the front diffusion layer and the PSG layer above the diffusion layer as the next step of single-side polishing mask;

[0041] S4: Single-side polishing: polishing the back of the N-type monocrystalline silicon wafer with NaOH wit...

Embodiment 2

[0058] Such as figure 1 As shown, this embodiment provides a method for preparing a full back contact IBC battery based on laser diffusion, comprising the following steps:

[0059] S1: Alkali texturing: select an N-type monocrystalline silicon wafer, and use hot alkali to make texturing on both sides, so that the front and back of the N-type monocrystalline silicon wafer form a textured layer;

[0060] S2: P diffusion: double-sided or single-sided P diffusion of N-type single crystal silicon wafers with phosphorus source to form FSF on the front side of N-type single crystal silicon wafers;

[0061] S3: Edge isolation: Use a mixed solution of HF and HN03 to remove the back and edge junctions of the N-type single crystal silicon wafer, and only keep the front diffusion layer and the PSG layer above the diffusion layer as the next step of single-side polishing mask;

[0062] S4: Single-side polishing: polishing the back of the N-type monocrystalline silicon wafer with NaOH wit...

Embodiment 3

[0079] Such as figure 1 As shown, this embodiment provides a method for preparing a full back contact IBC battery based on laser diffusion, comprising the following steps:

[0080] S1: Alkali texturing: select an N-type monocrystalline silicon wafer, and use hot alkali to make texturing on both sides, so that the front and back of the N-type monocrystalline silicon wafer form a textured layer;

[0081] S2: P diffusion: double-sided or single-sided P diffusion of N-type single crystal silicon wafers with phosphorus source to form FSF on the front side of N-type single crystal silicon wafers;

[0082] S3: Edge isolation: Use a mixed solution of HF and HN03 to remove the back and edge junctions of the N-type single crystal silicon wafer, and only keep the front diffusion layer and the PSG layer above the diffusion layer as the next step of single-side polishing mask;

[0083] S4: Single-side polishing: polishing the back of the N-type monocrystalline silicon wafer with NaOH wit...

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Abstract

The invention discloses a preparation method of a full back contact IBC battery based on laser diffusion and the battery thereof, and relates to the technical field of solar cells. The preparation method of the invention comprises the following steps: alkali texturing, P diffusion, edge isolation, single-side polishing, laser Doping, front-end PSG layer and laser damage layer removal, thermal oxidation, deposition of SixNy anti-reflection film, laser ablation and screen printing metallization, the battery prepared by the present invention has both the front grid line and the emitter on the back of the battery, Reduce the shading area and increase the short-circuit current. The invention uses laser diffusion to form a junction and make a local back field, which saves the process of ion implantation and photolithography as a mask, and reduces the production cost of IBC high-efficiency batteries. It adopts screen printing The method of metallization eliminates the metallization process of mask method and electroplating, reduces the production cost and process steps of IBC high-efficiency batteries, and is suitable for large-scale high-efficiency and low-cost battery production.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a laser diffusion-based full back contact IBC cell preparation method and the cell. Background technique [0002] With the increasingly fierce competition in the photovoltaic industry, the production of solar cells with high conversion efficiency, high quality and low cost will become the development trend of the industry. With the development of industrialization, the current conventional crystalline silicon cells have made great progress in the improvement of conversion efficiency and the reduction of manufacturing costs. However, due to the limitations of its structure and the nature of the material itself, certain bottlenecks have appeared in both efficiency and cost. It is difficult to achieve the goal of parity Internet access. There are many solutions in the industry, such as selective emitter, PERC battery, N-type battery, back contact battery or Top-Con battery, etc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0224
CPCH01L31/022458H01L31/0682H01L31/1804Y02E10/547Y02P70/50
Inventor 王岚陈坤张忠文谢毅陈明
Owner TONGWEI SOLAR ENERGY MEISHAN CO LTD
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