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Silicon-containing thin film deposition composition comprising disilylamine compound and method for preparing silicon-containing thin film using same

A technology for disilyl amine and silicon thin films, which is applied in the field of compositions for depositing silicon-containing thin films, can solve the problems of low film formation speed and productivity problems, and achieves excellent purity and durability, easy manufacture, and excellent high volatility. Effect

Active Publication Date: 2021-12-14
DNF
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in accordance with device miniaturization caused by ultra-high integration of devices, increase in aspect ratio, and diversification of device materials, it has been required to form ultrafine thin films with uniform and thin thickness and excellent electrical properties at the required low temperature technology, therefore, problems are emerging in terms of high-temperature processes at 600°C or higher, step coverage, etching properties, and physical and electrical properties of thin films when using existing silicon precursors
[0010] However, even in the case of forming an ultrafine film with a uniform and thin thickness and excellent electrical properties at a required low temperature in a device, productivity is problematic due to the low film formation speed, and therefore, the development of a Novel Silicon Precursors

Method used

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  • Silicon-containing thin film deposition composition comprising disilylamine compound and method for preparing silicon-containing thin film using same
  • Silicon-containing thin film deposition composition comprising disilylamine compound and method for preparing silicon-containing thin film using same
  • Silicon-containing thin film deposition composition comprising disilylamine compound and method for preparing silicon-containing thin film using same

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specific example

[0076] In addition, as a method for preparing the compound of Chemical Formula 1 according to an embodiment of the present invention, any method is possible as long as it is within the cognitive scope of those skilled in the art, however, as a specific example, the method includes:

[0077] reacting the compound of the following chemical formula 3 with the compound of the following chemical formula 4 in the presence of a base to prepare the compound of the chemical formula 5; and

[0078] The compound of the following Chemical Formula 5 is reduced in the presence of a reducing agent to prepare the disilylamine compound of the following Chemical Formula 1, so that the disilylamine compound of the following Chemical Formula 1 can be prepared:

[0079] [chemical formula 1]

[0080]

[0081] [chemical formula 3]

[0082]

[0083] [chemical formula 4]

[0084]

[0085] [chemical formula 5]

[0086]

[0087] (In chemical formula 1 and chemical formula 3 to 5, R a , R...

Embodiment 1

[0114] [Example 1] Preparation of two (dimethylsilyl) methyl disilyl amines

[0115] Step 1: Preparation of bis(dimethylsilyl)tetrachloromethyldisilylamine

[0116]

[0117] In a dry 5L SUS reactor under anhydrous atmosphere and inert atmosphere, add 2000g (8.05mol) methyl pentachlorodisilane (Si 2 Cl 5 CH 3 ) and 1500mL of n-pentane as an organic solvent, and slowly added 752.7g (8.05mol) of triethylamine ((CH 3 CH 2 ) 3 N), while maintaining the temperature at -20 °C. After adding, slowly add 1073g (8.05mol) tetramethyldisilazane ((((CH 3 ) 2 )SiH) 2 NH), while maintaining the temperature at -20 °C. The reaction solution after the addition was completed was slowly heated to room temperature, and stirred for 6 hours while maintaining the temperature at 25°C. After the completion of the reaction, the reaction mixture was filtered, and the white solid produced by filtration was removed to obtain the filtrate, and the solvent was removed under reduced pressure to ob...

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Abstract

The present invention relates to silicon-containing thin film deposition compositions comprising disilylamine compounds and methods of making silicon-containing thin films using the compositions. The silicon-containing thin film deposition composition of the present invention enables the preparation of high-quality silicon-containing thin films by including, as a silicon precursor, a disilylamine compound that exhibits excellent reactivity, thermal stability, and high volatility .

Description

technical field [0001] The present invention relates to compositions for depositing silicon-containing films comprising disilylamine compounds and methods of making silicon-containing films using the compositions. Background technique [0002] Silicon-containing films in various thin film forms are manufactured by various deposition processes in the semiconductor field, such as silicon film (silicon), silicon oxide film (silicon oxide), silicon nitride film (silicon nitride), silicon carbon nitride film Silicon carbonitride) and silicon oxynitride film (Silicon oxynitride), etc., and it is widely used in many fields. In particular, silicon oxide films and silicon nitride films are used as insulating films, diffusion barrier layers, hard masks, etch stop layers, seed layers, spacers, etc. objects, trench isolation, intermetal dielectric materials and protective film layers. Recently, polysilicon thin films are used in thin film transistors (TFT, thin film transistors), sola...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D4/00H01L21/02H01L21/324
CPCC07F7/10H01L21/02274H01L21/0228H01L21/02219H01L21/02123C23C16/45553C09D4/00H01L21/324H01L21/02208H01L21/02271C23C16/45536C23C16/24
Inventor 金成基张世珍杨炳日朴重进李相道朴廷主李三东朴建柱李相益金铭云
Owner DNF