Sandwich-structure high-energy-storage low-conductivity polymer-based composite film manufacturing method

A composite thin film, low conductivity technology, applied in the direction of circuits, capacitors, electrical components, etc., can solve the problems of limiting dielectric constant and breakdown strength, restricting overall performance, large dielectric loss, etc., to achieve favorable breakdown strength , Improve overall performance, improve the effect of breakdown strength

Inactive Publication Date: 2019-12-10
HANDAN COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

BOPP has a high breakdown strength (about 700MV/m), but its low dielectric constant (about 2) greatly restricts its overall performance, resulting in an energy storage density of less than 2.0J/cm 3
However, the general conductive particle/polymer composite film, on the one hand, due to the poor compatibility be

Method used

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  • Sandwich-structure high-energy-storage low-conductivity polymer-based composite film manufacturing method
  • Sandwich-structure high-energy-storage low-conductivity polymer-based composite film manufacturing method
  • Sandwich-structure high-energy-storage low-conductivity polymer-based composite film manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Dissolve 2.0g of pure P(VDF-HFP) in 18.0g of N,N-dimethylformamide (DMF) solvent, stir at 40°C for 60min, and ultrasonically disperse for 50min to form a uniform and stable solution A;

[0030] (2) Dissolve 0.002g of fluorinated graphene in 2.0g of DMF solvent, stir at 40°C for 60min, and ultrasonically disperse for 50min to form a stable suspension B;

[0031] (3) Mix the solutions A and B obtained in steps (1) and (2), stir at 40°C for 60 minutes, and ultrasonically disperse for 50 minutes to obtain a uniform and stable solution C;

[0032] (4) First, the solution A prepared in step (1) is poured on an ultra-flat petri dish by solution casting method, and then dried at 70° C. for 60 min to form a P(VDF-HFP) bottom layer; then step (3) Pouring the solution C prepared in the P(VDF-HFP) layer on the P(VDF-HFP) layer and continuing to dry for 60min to form the FGN / P(VDF-HFP) intermediate layer; pouring the solution A in step (1) on the intermediate layer and continui...

Embodiment 2

[0037] (1) Dissolve 2.0g of pure P(VDF-CTFE) in 16.0g of N,N-dimethylformamide (DMF) solvent, stir at 50°C for 50min, and ultrasonically disperse for 40min to form a uniform and stable solution A;

[0038] (2) 0.01 g of fluorinated graphene was dissolved in 4.0 g of DMF solvent, stirred at 50° C. for 50 min, and ultrasonically dispersed for 40 min to form a stable suspension B;

[0039] (3) Mix the solutions A and B obtained in steps (1) and (2), stir at 50°C for 50 minutes, and ultrasonically disperse for 40 minutes to obtain a uniform and stable solution C;

[0040] (4) First, the solution A prepared in step (1) is poured on an ultra-flat petri dish by solution casting method, and then dried at 80° C. for 50 min to form a P(VDF-CTFE) bottom layer; then step (3) The solution C prepared in is poured on the P(VDF-CTFE) layer and continued to dry for 50min to form the FGN / P(VDF-CTFE) intermediate layer; the solution A in step (1) was poured on the intermediate layer and continued...

Embodiment 3

[0045] (1) Dissolve 2.0g of pure P(VDF-TrFE) in 14.0g of N,N-dimethylformamide (DMF) solvent, stir at 60°C for 40min, and ultrasonically disperse for 30min to form a uniform and stable solution A;

[0046] (2) Dissolve 0.02 g of fluorinated graphene in 6.0 g of DMF solvent, stir at 60° C. for 40 min, and ultrasonically disperse for 30 min to form a stable suspension B;

[0047] (3) Mix the solutions A and B obtained in steps (1) and (2), stir at 60°C for 40 minutes, and ultrasonically disperse for 30 minutes to obtain a uniform and stable solution C;

[0048] (4) First, the solution A prepared in step (1) is poured on an ultra-flat petri dish by solution casting method, and then dried at 90° C. for 40 min to form a P(VDF-TrFE) bottom layer; then step (3) The solution C prepared in is poured on the P(VDF-TrFE) layer and continued to dry for 40min to form the FGN / P(VDF-TrFE) intermediate layer; the solution A in step (1) was poured on the intermediate layer and continued to dry...

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Abstract

The invention provides a method for manufacturing polymer-based dielectric composite film with a sandwich structure, high energy storage and low conductivity by taking novel fluorinated graphene as afunctional filler. In the method, the fluorinated graphene is uniformly dispersed in a polymer through a solution ultrasonic dispersion method so as to be served as a middle layer, a pure polymer is taken as an outer layer, and a polymer-based composite film of a sandwich structure is obtained through a layer-by-layer solution flow delay casting method and high-temperature annealing treatment. Byintroducing the fluorinated graphene/polymer composite film which is taken as the middle layer, a dielectric constant is improved, the pure polymer layers on upper and lower outer layers improve electric breakdown strength, and advantages of the two materials are considered. Besides, due to fluorine atoms on a surface of the fluorinated graphene and an interface effect between layers, stacking ofthe fluorinated graphene and formation of a conductive network are hindered, and therefore, energy storage density of the composite film is integrally improved. The dielectric composite film manufactured in the method is simple in process and excellent in performance, and the method can be widely applied to the fields of pulse electromagnetic devices, high-energy-storage-density capacitors and thelike.

Description

technical field [0001] The invention belongs to the technical field of preparation of dielectric polymer films, and in particular relates to a preparation method of a polymer-based composite film with a sandwich structure, high energy storage and low electrical conductivity. Background technique [0002] In recent years, with the increase in global energy demand and fossil energy consumption, the problems of improving the efficiency of traditional energy utilization and expanding the scope of new energy use have become increasingly severe. At the same time, with the rapid development of microelectronics and the increasing demand for power energy systems, it is particularly important to develop high-performance storage devices that are miniaturized, lightweight, easy to process, and flexible. As the most commonly used energy storage element, film capacitors have the advantages of fast charge and discharge, high voltage resistance, recyclability and stable performance. They me...

Claims

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Application Information

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IPC IPC(8): H01G4/20C08L27/16C08K3/04C08J5/18
CPCC08J5/18C08J2327/16C08K3/042H01G4/206
Inventor 赵小佳李超群朱廷春胡俊平任宁
Owner HANDAN COLLEGE
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