Preparation method of ZnO film and application of ZnO film to ultraviolet sensor

A film and substrate technology, applied in the field of film preparation and sensors, can solve problems such as reducing internal electron mobility, achieve good characteristics of flexible ultraviolet sensors, improve the preparation process, mechanical properties and the effect of maintaining sensitivity

Inactive Publication Date: 2019-12-20
LANZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

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  • Preparation method of ZnO film and application of ZnO film to ultraviolet sensor
  • Preparation method of ZnO film and application of ZnO film to ultraviolet sensor
  • Preparation method of ZnO film and application of ZnO film to ultraviolet sensor

Examples

Experimental program
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Example Embodiment

[0062] Example one

[0063] Preparation of ZnO film:

[0064] (1) Preparation of precursor liquid

[0065] Add 75mL, 0.5M zinc nitrate solution into a 200mL Erlenmeyer flask, put a magnet in the Erlenmeyer flask and place it on a magnetic stirrer, and then add 50mL, 2.5M sodium hydroxide solution dropwise to the ongoing process. While stirring the zinc nitrate solution. Place the resulting flocculent liquid in a centrifuge tube, centrifuge at 5000 rpm for 2 minutes in a centrifuge, then take out the centrifuge tube, pour out the supernatant in the tube, add deionized water, and shake until the sediment in the tube is evenly dispersed. The tube was placed in the centrifuge again and centrifuged with the same parameters. In this way, after repeating 5 times, pour out the supernatant in the last centrifuge tube. The purpose of repeated centrifugation is to reduce the content of sodium ions and nitrate ions in the precipitate. After the above process is completed, the obtained preci...

Example Embodiment

[0073] Example two

[0074] Preparation of UV sensor based on ZnO ultra-thin film:

[0075] In this embodiment, electrodes are fabricated on the ZnO thin film prepared in Embodiment 1, to obtain an ultraviolet sensor. Figure 7 Shown as a schematic diagram of the structure of the ultraviolet sensor, including a substrate 1, a ZnO film 2 formed on the surface of the substrate 1, and a pair of electrodes 3 formed on the surface of the ZnO film 2, one of which serves as a positive electrode and the other As a negative electrode. In this embodiment, the sensor electrodes preferably adopt interdigital positive electrodes and interdigital negative electrodes.

[0076] As an example, the preparation process is as follows: use carbon paste as a coating, transfer the electrode to a substrate with ZnO film through screen printing technology, and then bake the printed electrode device on a baking glue table at 80°C for 1 hour to make the carbon paste The organic solvent is fully volatile, and...

Example Embodiment

[0080] Example three

[0081] Preparation of flexible ultraviolet sensor based on ZnO ultra-thin film:

[0082] When the Schottky junction formed by the ZnO film and the p-type conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid) (PEDOT: PSS) is irradiated by ultraviolet light, the ZnO film barrier The electron-hole pairs generated in the area will move in opposite directions under the action of the built-in electric field, and the moving electrons and holes will generate photocurrent in the external circuit. In this embodiment, on the basis of the first and second embodiments, the substrate is changed from a glass sheet to a flexible Kapton film (polyimide film), and the interdigital electrode is changed from a carbon interdigital electrode to C / PEDOT: PSS fork Finger electrodes (in a pair of interdigital electrodes, one electrode is made of C, and the other electrode is made of PEDOT: PSS), which can be a flexible self-powered ultraviolet sensor.

[008...

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Abstract

The invention provides a preparation method of a ZnO film and application of the ZnO film to an ultraviolet sensor. The preparation method comprises the following steps that S1, a precursor solution is prepared, and the precursor solution contains a complex of zinc hydroxide and ammonium hydroxide; S2, a substrate is provided, hydrophilic treatment is conducted on the substrate, and thus the substrate is provided with the hydrophilic surface; S3, the surface of the substrate is coated with the precursor solution; and S4, the substrate coated with the precursor solution is annealed, and the pure-phase and continuous ZnO film is obtained on the surface of the substrate. By improving a preparation technology of the ZnO film, the thickness of the ZnO film can be decreased, the density of the ZnO film can be improved, and the sensitivity of the ultraviolet sensor is significantly improved; and the flexible ultraviolet sensor prepared shows the good flexible ultraviolet sensor characteristics.

Description

technical field [0001] The invention belongs to the field of film preparation and sensors, and relates to a preparation method of ZnO film and its application in ultraviolet sensors. Background technique [0002] Compared with traditional narrow bandgap semiconductors based on silicon materials, wide bandgap (Eg≥3.2eV) semiconductor materials have higher breakdown voltage, higher electron drift saturation velocity and stronger radiation resistance, so based on wide bandgap The photoconductive ultraviolet sensor of semiconductor material has more excellent performance. The materials currently used to prepare wide bandgap ultraviolet sensors are: diamond, SiC, GaN, AlGaN, ZnO, ZnS, ZnSe, TiO 2 Wait. Among these materials, the biocompatibility of ZnO and the diversity of nanostructures make it an ideal material for the preparation of sensors. Compared with bulk materials, the high specific surface area of ​​nanomaterials makes them unique advantages in the preparation of ult...

Claims

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Application Information

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IPC IPC(8): C03C23/00C03C15/00C03C17/25G01J1/42C08J7/06C08L79/08C08L61/16
CPCC03C15/00C03C17/25C03C23/0075C03C23/0085C03C2217/216C03C2218/116C08J7/06C08J2361/16C08J2379/08G01J1/42
Inventor 秦勇徐奇孟雷欣
Owner LANZHOU UNIVERSITY
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