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A Method for Vertical Heteroepitaxial Single Crystal Metal Thin Film Based on Single Crystal 2D Material/Single Crystal Copper

A metal thin film, two-dimensional material technology, applied in the direction of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problems of high price of single crystal substrates, reduce the properties of metal thin films, small size, etc., to promote industrialization The effect of production, low cost and large size

Active Publication Date: 2020-10-09
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current methods of preparing metal thin films are mainly deposition or sputtering methods, and the obtained metal thin films are mainly polycrystalline thin films, and the existence of grain boundaries will greatly reduce the properties of metal thin films, such as electrical properties, thermal properties, Mechanical properties, anti-corrosion properties, etc.
Although single crystal metal thin films can be obtained by epitaxy on single crystal substrates, the preparation of single crystal metal thin films cannot be produced on a large scale due to the high price of single crystal substrates, small size, and difficulty in peeling off single crystal metal thin films. Its application is limited

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  • A Method for Vertical Heteroepitaxial Single Crystal Metal Thin Film Based on Single Crystal 2D Material/Single Crystal Copper
  • A Method for Vertical Heteroepitaxial Single Crystal Metal Thin Film Based on Single Crystal 2D Material/Single Crystal Copper
  • A Method for Vertical Heteroepitaxial Single Crystal Metal Thin Film Based on Single Crystal 2D Material/Single Crystal Copper

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Embodiment 1

[0044] The present invention proposes a method for vertical heteroepitaxial single crystal metal thin film based on single crystal graphene / single crystal copper, said method comprising the following steps:

[0045] S1, using a chemical vapor deposition system to anneal commercial polycrystalline copper foil to convert it into single crystal copper foil, the annealing process is carried out according to the annealing process in the Chinese patent application CN201710020397.4; specifically, step S1 may include the following steps:

[0046] S11, forming one end of the polycrystalline copper foil so that the tip is placed flat on the high-temperature-resistant substrate, connecting the transmission device, putting it into a chemical vapor deposition equipment, passing in an inert gas with a flow rate of 300-500 sccm, and then starting to heat up , the heating process lasts for 50-70min, and the inert gas is N 2 or Ar;

[0047] S12, when the temperature rises to 800-1100°C, the p...

Embodiment 2

[0055] The present invention proposes a method for vertical heteroepitaxial single crystal metal thin film based on single crystal graphene / single crystal copper, said method comprising the following steps:

[0056] S1, using a chemical vapor deposition system to anneal commercial polycrystalline copper foil to convert it into single crystal copper foil, the annealing process is carried out according to the annealing process in the Chinese patent application CN201710020397.4; specifically, step S1 may include the following steps:

[0057] S11, forming one end of the polycrystalline copper foil so that the tip is placed flat on the high-temperature-resistant substrate, connecting the transmission device, putting it into a chemical vapor deposition equipment, passing in an inert gas with a flow rate of 300-500 sccm, and then starting to heat up , the heating process lasts for 50-70min, and the inert gas is N 2 or Ar;

[0058] S12, when the temperature rises to 800-1100°C, the p...

Embodiment 3

[0066] The present invention proposes a method for vertical heteroepitaxial single crystal metal thin film based on single crystal boron nitride / single crystal copper, said method comprising the following steps:

[0067] S1, using a chemical vapor deposition system to anneal commercial polycrystalline copper foil to convert it into single crystal copper foil, the annealing process is carried out according to the annealing process in the Chinese patent application CN201710020397.4; specifically, step S1 may include the following steps:

[0068] S11, forming one end of the polycrystalline copper foil so that the tip is placed flat on the high-temperature-resistant substrate, connecting the transmission device, putting it into a chemical vapor deposition equipment, passing in an inert gas with a flow rate of 300-500 sccm, and then starting to heat up , the heating process continues for 50 to 70 minutes, and the inert gas is N2 or Ar;

[0069] S12, when the temperature rises to 80...

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Abstract

The invention provides a method for vertical heteroepitaxy of a single crystal metal film on the basis of a single crystal two-dimensional material / single crystal copper. The single-crystal two-dimensional material is single-crystal graphene or single-crystal boron nitride, a single-crystal two-dimensional material / single-crystal copper composite structure is used as an epitaxial substrate, metalis grown on the epitaxial substrate in an epitaxial mode, and the single-crystal metal film is obtained. The metals include, but are not limited to, gold, silver, copper, platinum, palladium, tungsten, iron, chromium, cobalt, and nickel. According to the method provided by the invention, the problems of complexity, small size, difficulty in stripping and extremely high price of a preparation method of the single crystal metal film are solved, and the preparation of the large-size single crystal metal film is realized through a very simple method.

Description

technical field [0001] The invention relates to a method for vertical heterogeneous epitaxial single crystal metal thin film based on single crystal two-dimensional material / single crystal copper. Background technique [0002] Metal has always occupied a very important position in the development of human history. The Bronze Age and Iron Age that appeared after the Stone Age were marked by the application of metal materials. In modern times, a wide variety of metals are widely used in electrical, light industry, machinery manufacturing, construction industry, defense industry and other fields, which greatly promotes the progress of society. [0003] With the rapid development of the microelectronics industry, the preparation of metal thin films has been widely studied and has become increasingly mature. However, the current methods of preparing metal thin films are mainly deposition or sputtering methods, and the obtained metal thin films are mainly polycrystalline thin fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/02C30B29/02C30B29/40C30B25/18C30B23/02
CPCC30B1/02C30B23/025C30B25/18C30B29/02C30B29/403
Inventor 刘开辉张智宏王恩哥俞大鹏
Owner PEKING UNIV