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Texturing additive for diamond wire polycrystalline silicon wafers and texturing etching solution for diamond wire polycrystalline silicon wafers

A polycrystalline silicon wafer and diamond wire technology, applied in the field of diamond wire polycrystalline silicon wafer texturing etching solution, can solve the problems of inability to large-scale promotion, limited promotion of corrosion effect, increased process cost, etc., so as to improve solar conversion efficiency and reduce The effect of reflectivity and cost reduction per kilowatt-hour

Inactive Publication Date: 2020-01-03
上海硅洋新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, judging from the actual production process, the above technical scheme not only increases the process cost, but also has a limited promotion effect on the corrosion effect, so this scheme cannot be widely promoted

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Adopt the technical scheme provided by the present invention to carry out the step of making texture to diamond wire polysilicon wafer as follows:

[0015] S1: Preparation of diamond wire polysilicon wafer texturing additives: Take a small amount of pure water with a resistivity of 18MΩ, and while stirring, add Jimmy’s quaternary ammonium salt cationic surfactant for pre-dissolution. At the same time, take another small amount of pure water with a resistivity of 18MΩ, and add tartaric acid and isomeric alcohol ether for pre-dissolution while stirring. Finally, the two solutions are mixed to prepare additives. The mass of the active ingredients added is calculated according to the final concentration: the concentration of Jimmy’s quaternary ammonium salt cationic surfactant is 0.5%, the tartaric acid is 5%, and the isomeric alcohol ether is 2%.

[0016] S2: Preparation of acid corrosion solution: the preparation ratio of acid corrosion solution is HF:H 2 O: HNO 3 =1:1...

Embodiment 2

[0020] S1: Preparation of additives for diamond wire polysilicon wafer texturing: Take a small amount of pure water with a resistivity of 18MΩ, and add citric acid while stirring. At the same time, another small amount of pure water with a resistivity of 18 MΩ was taken, and polyethylene glycol and quaternary ammonium salt cationic surfactant were added while stirring. In the finally obtained additive, citric acid is 3%, the concentration of quaternary ammonium cationic surfactant is 0.5%, and polyethylene glycol is 1%.

[0021] S2: Preparation of acidic corrosion solution: the preparation ratio of acidic corrosion solution is HF: H2O: HNO 3 =1:1.8:3.0. Among them, HF is commercially available electronic grade hydrofluoric acid with a concentration of 49%, and H 2 O is 18MΩ electronic grade pure water, HNO 3 It is commercially available electronic grade nitric acid with a concentration of 68%.

[0022] S3: Texturing processing: adding an appropriate amount of silicon wafer...

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Abstract

The invention discloses a texturing additive for diamond wire polycrystalline silicon wafers and a texturing etching liquid using the additive for the polycrystalline silicon wafers. The texturing additive for the diamond wire polycrystalline silicon wafers comprises a low-viscosity low-foam-stability component, a high-viscosity high-foam-stability component and deionized water, wherein the low-viscosity low-foam-stability component comprises oxalic acid, tartaric acid, citric acid, a soluble citrate, an isomeric alcohol ether and a quaternary ammonium salt cationic surfactant, and the high-viscosity high-foam-stability component comprises polyethylene glycol, methoxypolyethylene glycol and a gimini quaternary ammonium salt cationic surfactant. By using the texturing additive provided by the invention, the textured microstructure of the diamond wire silicon wafers can be modulated, the reflectivity of the diamond wire polycrystalline silicon wafers is effectively reduced, and the lighttrapping effect is improved, so that the solar photovoltaic conversion efficiency is improved, and the kilowatt-hour power generation cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of fine chemicals, and in particular relates to a diamond wire polycrystalline silicon wafer texturing additive and a diamond wire polycrystalline silicon wafer texturing etching solution using the diamond wire polycrystalline silicon wafer texturing additive. Background technique [0002] At present, in solar photovoltaic power generation technology, how to reduce cost and increase efficiency is an eternal topic in photovoltaic manufacturing and application. For diamond wire polysilicon wafers, the reflectivity of products prepared by conventional texturing processes is too high to meet the requirements for cell efficiency. Therefore, it is necessary to develop special additives and new texturing processes to ensure high conversion efficiency. Basically, reduce the cost of silicon wafers. With the development of technology, many skilled in the art try to actively intervene and modulate the etching process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B33/10H01L31/0236H01L31/18
CPCC30B29/06C30B33/10H01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 王懿喆易武雄潘鼎鼎张卫
Owner 上海硅洋新能源科技有限公司
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