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Long wafer boat and preparation process

A preparation process and crystal growth technology, applied in the field of crystal boat growth and preparation process, can solve the problems of inability to use conventional welding, cutting and drilling damage, high brittleness of silicon carbide, etc., so as to improve the preparation efficiency and yield, and improve the yield , the effect of small deformation

Inactive Publication Date: 2020-01-10
北京灵禾科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon carbide is brittle, and its cutting and drilling are easy to cause damage, and it cannot be processed by conventional welding. It is difficult to use silicon carbide to burn the long crystal boat as a whole.

Method used

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  • Long wafer boat and preparation process
  • Long wafer boat and preparation process
  • Long wafer boat and preparation process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] refer to figure 1 , the present embodiment provides a crystal growth boat, comprising a baffle 1 and a placement column 2, the placement column 2 is provided with a wafer groove 21, the two ends of the placement column 2 are connected to the baffle 1, and the baffle 1 Both the placement column 2 are made of silicon carbide, and the baffle plate 1 and the placement column 2 are connected by mortise and tenon.

[0082] By adopting the above scheme, the wafer groove 21 is used to store wafers, and by utilizing the excellent characteristics of silicon carbide, the shape of the long crystal boat is reduced, the heat is reduced, and the heat conduction is good, and a larger carrying capacity can be set to improve the carrying capacity of the wafers. The production efficiency and yield rate in the high-temperature preparation process; however, due to the high brittleness of silicon carbide, the overall firing process is cumbersome, the failure rate is high, and the cost is hig...

Embodiment 2

[0094] refer to Figure 5 , the present embodiment provides a crystal growth boat, comprising a baffle 1 and a placement column 2, the placement column 2 is provided with a wafer groove 21, the two ends of the placement column 2 are connected to the baffle 1, and the baffle 1 Both the placement column 2 are made of silicon carbide, and the baffle plate 1 and the placement column 2 are connected by mortise and tenon.

[0095] By adopting the above scheme, the wafer groove 21 is used to store wafers, and by utilizing the excellent characteristics of silicon carbide, the shape of the long crystal boat is reduced, the heat is reduced, and the heat conduction is good, and a larger carrying capacity can be set to improve the carrying capacity of the wafers. The production efficiency and yield rate in the high-temperature preparation process; however, due to the high brittleness of silicon carbide, the overall firing process is cumbersome, the failure rate is high, and the cost is hi...

Embodiment 3

[0109] refer to Figure 9 , the present embodiment provides a crystal growth boat, comprising a baffle 1 and a placement column 2, the placement column 2 is provided with a wafer groove 21, the two ends of the placement column 2 are connected to the baffle 1, and the baffle 1 Both the placement column 2 are made of silicon carbide, and the baffle plate 1 and the placement column 2 are connected by mortise and tenon.

[0110] By adopting the above scheme, the wafer groove 21 is used to store wafers, and by utilizing the excellent characteristics of silicon carbide, the shape of the long crystal boat is reduced, the heat is reduced, and the heat conduction is good, and a larger carrying capacity can be set to improve the carrying capacity of the wafers. The production efficiency and yield rate in the high-temperature preparation process; however, due to the high brittleness of silicon carbide, the overall firing process is cumbersome, the failure rate is high, and the cost is hi...

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PUM

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Abstract

The invention provides a long wafer boat. The long wafer boat comprises a baffle plate and a placing column, wherein a wafer slot is arranged in the placing column. The two ends of the placing columnare connected to the baffle plate. Both the baffle plate and the placing column are made of silicon carbide. The baffle plate is connected with the placing column by mortise and tenon. The wafer slotis used for storing wafers, and the excellent characteristics of silicon carbide are used to make the wafer boat smaller in deformation, smaller in thermal change and better in thermal conductivity. Alarger load capacity can be set to improve the preparation efficiency and yield of the load wafer during high temperature preparation. The invention also provides a preparation process of the long wafer boat. The preparation process comprises the following steps: A. performing wire cutting on the crude baffle plate, and processing the baffle plate outline and the mortise by wire cutting; B. cutting the two end faces of the placing column, and performing wire cutting on the wafer slot; C. performing wire cutting on two ends of the placing column, and processing two ends of the placing column by wire cutting and / or electric spark to form the tenon; and D. assembling the baffle plate and the placing column.

Description

technical field [0001] The invention relates to the field of electronic semiconductors, in particular to a crystal growth boat and a preparation process. Background technique [0002] During the manufacturing process of semiconductor wafers, the wafers are placed on a wafer boat, and then the wafer boat is placed in a furnace tube for batch manufacturing. For wafers, the quality and quantity of wafers produced by one device in the same period greatly affect the yield rate and manufacturing cost of semiconductor wafers. The large-volume crystal boat greatly improves the efficiency of the wafer, but at the same time, it puts forward higher requirements for the material of the wafer boat. The wafer boat made of ordinary materials has a large thermal expansion coefficient, which will affect the shape of the wafer. At the same time, the increase in temperature Speed ​​and temperature maintenance are also the key factors for preparing high-quality wafers, and wafer boats made of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04B28D7/04B28D7/00H01L21/673
CPCB28D5/045B28D5/0082B28D5/0058H01L21/67313
Inventor 毛卫华高聪惠
Owner 北京灵禾科技发展有限公司
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