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High electromechanical coupling coefficient acoustic surface wave device based on double-layer electrode and preparation method thereof

A surface acoustic wave device, aluminum electrode technology, applied in electrical components, coatings, metal material coating processes, etc., can solve problems such as low electromechanical coupling coefficient

Active Publication Date: 2020-01-10
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current surface acoustic wave mode based on zinc oxide thin films is mainly the Sisawa wave mode. It is reported that the electromechanical coupling coefficient of the Sisawa wave is relatively low, which is still slightly insufficient compared with single crystal materials.

Method used

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  • High electromechanical coupling coefficient acoustic surface wave device based on double-layer electrode and preparation method thereof
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  • High electromechanical coupling coefficient acoustic surface wave device based on double-layer electrode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0050] 1) A c-plane sapphire substrate with a pattern of interdigitated electrodes with a period of 2 microns is prepared by photolithography. After priming, the substrate is placed in an electron beam coater. Start the vacuum system to evacuate to 9×10 -6 Pa; adjust the power of the electron gun to 20%, and clean the target (purity is 99.999%) for 5 minutes.

[0051] 2) After the power reading is stable, open the target baffle, and the evaporation speed of the Cu electrode material is Deposit 75nm.

[0052] 3) After the evaporation is completed, turn off the power. Fill nitrogen into the vacuum chamber of the electron beam evaporation coating machine until the pressure in the vacuum chamber is atmospheric pressure, open the cavity and take out the sapphire substrate with the copper electrode deposited.

[0053] 4) Put the stripped substrate into the magnetron sputtering chamber to grow a silicon dioxide film, select the radio frequency sputtering mode, set the power to 1...

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Abstract

The invention discloses a high electromechanical coupling coefficient acoustic surface wave device based on a double-layer electrode and a preparation method thereof. The acoustic surface wave deviceis structurally characterized in that a copper electrode, a piezoelectric film and an aluminum electrode are sequentially arranged on a substrate, a signal terminal of the copper electrode correspondsto a grounded terminal of the aluminum electrode, and the piezoelectric film is a zinc oxide film. Due to the fact that the adopted Sezawa wave mode is formed by coupling film thickness vibration andtransverse vibration, the acoustic surface wave device has the characteristics of changing the coupling mode of electric fields and the piezoelectric film by exciting a longitudinal electric field (in the film thickness direction) and a transverse electric field ( in the acoustic surface wave propagation direction) through the double-layer electrode, thereby raising the electromechanical couplingcoefficient of the acoustic surface wave device.

Description

technical field [0001] The invention relates to a surface acoustic wave device based on double-layer electrodes with high electromechanical coupling coefficient and a preparation method thereof, belonging to the field of information electronic materials. Background technique [0002] Surface acoustic wave devices are electronic devices that encode and decode radio frequency signals for information transmission based on the piezoelectric effect, and have developed rapidly in the past few decades. At present, with the opening of the 5G era, the demand for surface acoustic wave devices with zero temperature drift, small size, and large bandwidth is becoming stronger and stronger. [0003] Traditional surface acoustic wave devices are based on piezoelectric single crystal materials such as lithium niobate and lithium tantalate, which are relatively expensive and require high directional cutting. The surface acoustic wave device based on the piezoelectric film has the advantages...

Claims

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Application Information

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IPC IPC(8): C23C14/30C23C14/18C23C14/35C23C14/10C23C14/08H03H3/02H03H9/02
CPCC23C14/30C23C14/18C23C14/0036C23C14/10C23C14/086H03H3/02H03H9/02574H03H2003/023H03H9/02228H03H9/14544H03H3/08H03H9/14538H03H9/02582H03H9/64
Inventor 潘峰苏荣宣曾飞沈君尧傅肃磊
Owner TSINGHUA UNIV
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