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A samarium doped metal oxide thin film transistor and its preparation method and application

An oxide thin film and transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of poor bias stress stability, large off-state current, large threshold voltage, etc., and achieve high production efficiency and smoothness. The effect of high degree, excellent electrical performance and stability

Active Publication Date: 2022-08-02
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For the current In 2 o 3 Thin film transistors have problems such as large threshold voltage, large off-state current, and poor bias stress stability. The present invention provides a samarium-doped metal oxide thin film transistor and a preparation method thereof

Method used

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  • A samarium doped metal oxide thin film transistor and its preparation method and application
  • A samarium doped metal oxide thin film transistor and its preparation method and application
  • A samarium doped metal oxide thin film transistor and its preparation method and application

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preparation example Construction

[0027] The present invention provides a method for preparing a samarium-doped metal oxide thin film transistor, which comprises the following steps:

[0028] Step S01. Provide a salt solution containing samarium ions, indium ions and silicon dioxide (SiO 2 ) layer of P-type silicon substrate;

[0029] Step S02. Use acetone, ethanol, etc. to carry out ultrasonic cleaning treatment on the surface of the P-type silicon substrate, so that the surface of the silicon dioxide is clean and free of stains, and use deionized water to remove residual acetone, ethanol, etc. on the surface, and use a protective atmosphere to dry it to avoid Residual moisture, oxidative gas or reducing gas on the silica surface, and finally use a plasma cleaning machine to clean the silica surface to make the silica surface dry and clean;

[0030] Step S03. Coat the salt solution on the surface of silicon dioxide by spin coating to form a samarium-doped metal oxide thin film precursor layer.

[0031] Step...

Embodiment 1

[0046] A samarium-doped metal oxide thin film transistor and a preparation method thereof.

[0047] The preparation method comprises the following steps:

[0048] S11. The indium (III) nitrate [In (NO 3 ) 3 ·xH 2 O] and samarium(III) nitrate hexahydrate [Sm(NO 3 ) 3 ·6H 2 O] dissolved in deionized water, mixed to obtain a mixed solution, control the In 3+ is 0.392mol / L, Sm 3+ is 0.008mol / L.

[0049] S12. Provide a P-type silicon substrate with a silicon dioxide layer, wherein the thickness of the silicon dioxide layer is 100 nm, and acetone and ethanol are used for ultrasonic cleaning in sequence, and ultrasonic cleaning is performed for 15 minutes respectively, and then the residual ethanol on the surface is cleaned with deionized water. , and blow dry with nitrogen gas, and then use a plasma cleaning machine to clean the surface of the silicon substrate and the silicon dioxide layer to obtain a clean and dry silicon dioxide layer.

[0050] S13. Use a syringe to extr...

Embodiment 2

[0054] A samarium-doped metal oxide thin film transistor and a preparation method thereof.

[0055] The preparation method comprises the following steps:

[0056] S21. The indium (III) nitrate [In (NO 3 ) 3 ·xH 2 O] and samarium(III) nitrate hexahydrate [Sm(NO 3 ) 3 ·6H 2 O] dissolved in deionized water, mixed to obtain a mixed solution, control the In 3+ is 0.38mol / L, Sm 3+ is 0.02mol / L.

[0057] S22. Provide a P-type silicon substrate with a silicon dioxide layer, wherein the thickness of the silicon dioxide layer is 100 nm, and acetone and ethanol are used for ultrasonic cleaning in sequence, and ultrasonic cleaning is performed for 15 minutes respectively, and then the residual ethanol on the surface is cleaned with deionized water. , and blow dry with nitrogen gas, and then use a plasma cleaning machine to clean the surface of the silicon substrate and the silicon dioxide layer to obtain a clean and dry silicon dioxide layer.

[0058] S23. Use a syringe to extrac...

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Abstract

The invention relates to the technical field of thin film transistors, in particular to a samarium-doped metal oxide thin film transistor and a preparation method and application thereof. The preparation method includes the following steps: providing a salt solution containing samarium ions and indium ions; coating the salt solution on a clean silicon dioxide surface by a spin coating method, and performing annealing treatment to obtain a solution on the silicon dioxide surface. A samarium doped metal oxide thin film, the root mean square roughness of the samarium doped metal oxide thin film is (0.200-0.215) nm. The preparation method provided by the invention has the advantages of simple process, strong operability, good product appearance uniformity, high production efficiency, and can reduce the production cost and improve the carrier density and passivation between the metal oxide film and the silicon dioxide interface. The obtained metal oxide film has high flatness, and has excellent electrical properties and stability.

Description

technical field [0001] The invention belongs to the technical field of thin film transistors, and in particular relates to a samarium-doped metal oxide thin film transistor and a preparation method and application thereof. Background technique [0002] Metal oxide thin film transistors, as the key devices of flat panel displays, have attracted more and more attention due to their excellent electrical properties such as high mobility, small sub-threshold swing, low off-state current, and good uniformity. Oxides are SnO, ZnO, IGZO, In 2 O 3 Wait. Although In 2 O 3 Metal oxide semiconductors have good film quality, but pure In 2 O 3 Thin film transistors have problems such as large threshold voltage, large off-state current, and poor bias stress stability, which lead to In 2 O 3 Thin film transistors cannot be well promoted and applied. SUMMARY OF THE INVENTION [0003] For the current In 2 O 3 Thin film transistors have problems such as large threshold voltage, la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/34H01L29/06H01L29/24H01L29/786
CPCH01L29/66969H01L29/7869H01L29/24H01L29/0684H01L2924/01062
Inventor 许望颖李彦苇洪利萍朱德亮吕有明柳文军方明韩舜曹培江曾玉祥
Owner SHENZHEN UNIV