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A kind of preparation method of copper thin film material with full nano-twin structure

A technology of nano-twins and tissue structure, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems affecting the overall performance of nano-twinned copper structures, and achieve easy promotion and thermal stability The effect of high resistance and low stress

Active Publication Date: 2020-09-11
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But for thin-film applications of a few microns, this is on the order of the thickness of the fine-grained transition layer, thus affecting the overall performance of the nanotwinned copper structure

Method used

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  • A kind of preparation method of copper thin film material with full nano-twin structure
  • A kind of preparation method of copper thin film material with full nano-twin structure
  • A kind of preparation method of copper thin film material with full nano-twin structure

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Experimental program
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Effect test

Embodiment 1

[0044] Copper thin film deposition on a wafer with a thickness of 100nmTi and a thickness of 400nmCu seed layer is sequentially sputtered: firstly, surface treatment: use degreasing lye to remove possible dust, grease, oxides, and carry out with 5wt.% HCl The surface is activated and placed in the plating tank after being rinsed with deionized water. The composition of the plating solution is: CuSO 4 20g / L, sulfuric acid 15mL / L, sodium chloride 40ppm, gelatin 22ppm, polyethylene glycol 100ppm, and the balance is water. The plating solution is heated to 25°C, and the electrodeposition is carried out under constant current conditions, and the current density is 6A / dm 2 , electroplating for 60min. After washing and drying the electro-deposited coating, heat treatment is carried out, the heat treatment temperature is 250° C., and the heat treatment time is 1 hour.

[0045] The cross-sectional morphology of the coating before heat treatment is as follows: figure 2 (a) and i...

Embodiment 2

[0047] Deposition of copper film on chemically plated amorphous NiP film: firstly carry out surface treatment to remove possible dust, grease and oxides, activate the surface with 5wt.% HCl, rinse with deionized water and place in the slot. The composition of the plating solution is: CuSO 4 30g / L, sulfuric acid 10mL / L, hydrochloric acid 30ppm, gelatin 50ppm, polyethyleneimine 600ppm, and the balance is water. The plating solution is heated to 30°C, and the electrodeposition is carried out under constant current conditions, and the current density is 3A / dm 2 , electroplating for 60min. Then, after washing and drying the electro-deposited coating, heat treatment is carried out. The heat treatment temperature is 280° C. and the heat treatment time is 0.5 hours. It has been detected that after electrodeposition, there is a fine-grain transition layer about 18 μm thick between the nano-twin structure of the coating and the seed layer. After heat treatment, the fine-grain transi...

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Abstract

The invention discloses a preparing method for a copper thin film material of a full nanometer twin-crystal texture structure and belongs to the technical field of micro-electronic encapsulation. According to the preparing method, after a clad layer with nanometer twin-crystal texture is prepared through electro-deposition, a proper heat treatment technology is adopted, a transition isometric crystal layer between nanometer twin crystals and a substrate material is transformed into nanometer twin-crystal texture through clad layer internal stress generated in the electro-deposition progress, and thus the copper thin film material with nanometer twin-crystal texture from the bottom to the top is obtained. Different from a copper thin film material which is directly obtained through electro-deposition and is of a nanometer twin-crystal texture structure from the bottom to the top, electro-deposition does not need to be carried out on a copper seed layer with strict (111) preferred orientation, the good mechanical performance, hardness and conductivity of nanometer twin-crystal copper are reserved in the prepared clad layer, the preparing difficulty is also lowered, and the copper thin film material can be widely applied to various common substrate materials in the micro-electronic industry.

Description

technical field [0001] The invention relates to the technical field of microelectronics and microelectromechanical system packaging, in particular to a method for preparing a copper thin film material with a full nano-twin structure. Background technique [0002] Because of its low resistivity and high thermal conductivity, pure copper is widely used as a variety of interconnects in the microelectronics interconnection industry, such as wire bonding materials (wire bonding), under-bump metal layer (under bump metallization, UBM), redistribution layer (Redistribution layer, RDL), copper pillar bump (copper pillar), through silicon via (through silicon via, TSV) and other packaging structures. With the continuous improvement of packaging density and the continuous reduction of interconnect size, the temperature gradient, stress intensity and current density imposed on copper interconnect are increasing day by day, which requires better comprehensive performance of copper inter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/38C25D5/50C25D21/12C25D7/12C25D5/54H01L21/768B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C25D3/38C25D5/50C25D5/54C25D7/12C25D21/12H01L21/76898
Inventor 刘志权高丽茵孙蓉
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS