Chamfering abrasive wheel, preparation method thereof and wafer machining device
A grinding wheel and chamfering technology, applied in metal processing equipment, grinding/polishing equipment, manufacturing tools, etc., can solve problems such as diamond coating damage
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[0036] figure 1 It is a schematic diagram of the preparation process of the existing chamfering grinding wheel, such as figure 1 As shown, the manufacturing method of the existing chamfering grinding wheel comprises: step a, making the chamfering grinding wheel base 1; step b, opening the grinding groove 2 on the side of the chamfering grinding wheel according to the shape requirements of use; step c, adding a certain proportion of diamond particles 3. Fill the grinding groove 2 with adhesive, and combine it with the chamfering grinding wheel base 1 through high-temperature sintering; step d, use a dressing wheel 4 with a certain shape to grind off the excess diamond particles 3 to form a grinding groove of the desired shape 2.
[0037] However, due to the high interfacial energy and chemical inertness of diamond, the bonding performance between the diamond coating of the existing chamfering grinding wheel and the substrate 1 of the chamfering grinding wheel is very poor. , ...
Embodiment 1
[0052] Metal Mo is used as the transition metal layer, such as image 3 Shown, the preparation technology of chamfering grinding wheel comprises the following steps:
[0053] Step a. making the chamfering grinding wheel base 1;
[0054] Step b. Open the grinding groove 2 on the side of the chamfering grinding wheel according to the shape requirements;
[0055] Step c. Prepare a metal molybdenum layer in the grinding tank 2 as the transition metal layer 5 by magnetron sputtering. Specifically, a Mo plate with a purity of 99.999% can be used as the sputtering target, and argon gas is used as the shielding gas , the deposition temperature is 800°C, the chamber pressure is 0.8Pa, and the deposition time is 60min;
[0056] Step d. Deposit a layer of diamond coating 6 on the transition metal layer 5 using hot filament plasma chemical vapor deposition (HFCVD), specifically CH 4 and H 2 As a plasma reactive gas, CH 4 and H 2 The ratio is 4%, CH 4 and H 2 The flow rates are 16scc...
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