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GaN-based photothermal detection thin film element

A thin-film element and photothermal detection technology, which is applied in the direction of electric radiation detectors, can solve the problems of high-power continuous photothermal detection requiring refrigeration, thermal radiation detection wavelength range is narrow, and it is difficult to mass-produce, achieving good linearity, The effect of wide wavelength range and fast response speed

Active Publication Date: 2020-02-07
昆明先导新材料科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Due to the limitations of the current material system, single crystal substrate selection and preparation process, photothermal detection thin film devices based on the off-diagonal element Seebeck effect are difficult to mass-produce, high-power continuous photothermal detection requires refrigeration, low damage threshold, thermal Problems such as narrow wavelength range of radiation detection
There is no report of this type of thin-film detection element based on the third-generation semiconductor

Method used

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Examples

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Embodiment 1

[0026] A GaN-based photothermal detection thin film element, used for 0.8-12μm continuous infrared thermal radiation detection, with a structure such as figure 1 As shown, the thin film element structure includes: single crystal substrate 1, [p-GaN / n-GaN] N Superlattice 2 , metal electrode 3 , absorbing layer 4 , anti-reflection protection layer 5 , lead wire 6 , thermal conductive adhesive 7 , and heat sink 8 . The single crystal substrate is a 5° beveled semi-insulating GaN (0001) substrate with a room temperature resistivity of 1.0E+7Ω·cm and a thickness of 0.2mm. [p-GaN / n-GaN] N The superlattice is alternately epitaxially grown on a 5° off-cut semi-insulating GaN (0001) substrate by MOCVD, cut off by the p-GaN plane and etched trapezoidal mesas, along the [p-GaN / n-GaN] NA pair of Au electrodes are set on both sides of the superlattice and GaN (0001) substrate in the c-axis tilt direction to form ohmic contacts, which are derived from the Au leads and connected to the sig...

Embodiment 2

[0030] A GaN-based photothermal detection thin-film element, used for 0.35-0.8μm continuous light-ray detection, the structure of the thin-film element includes: single crystal substrate, [p-GaN / n-GaN] N Superlattices, metal electrodes, absorber layers, anti-reflective protective layers, leads, thermal paste, and heat sinks. The single crystal substrate is a 20° chamfered semi-insulating SiC (0001) substrate with a room temperature resistivity of 2.0E+7Ω·cm and a thickness of 0.4mm. [p-GaN / n-GaN] N The superlattice is alternately epitaxially grown on a 20° off-cut semi-insulating SiC (0001) substrate by MOCVD, cut off by the p-GaN plane and etched trapezoidal mesa, along the [p-GaN / n-GaN] N A pair of Ti / Al / Pt / Au combined electrodes are arranged on both sides of the superlattice and SiC (0001) substrate in the c-axis tilt direction to form an ohmic contact, which is derived from the Cu lead and connected to the signal input end, and the absorption layer is covered in [ p-GaN / ...

Embodiment 3

[0034] A GaN-based photothermal detection thin film element for 365nm monochromatic pulsed laser detection, the structure of the thin film element includes: single crystal substrate, [p-GaN / n-GaN] N Superlattice, metal electrodes, absorber layer, anti-reflection protective layer, leads, thermal paste, heat sink. Single crystal substrate is 45° bevel cut insulating Al 2 o 3 (0001) substrate, the resistivity at room temperature is 1.0E+8Ω·cm, and the thickness is 0.8mm. [p-GaN / n-GaN] N Alternative epitaxial growth of superlattice on 45° off-cut insulating Al by MOCVD 2 o 3 On the (0001) substrate, cut off the p-GaN surface and etch the trapezoidal mesa, along the [p-GaN / n-GaN] N Superlattice and Al 2 o 3 (0001) A pair of Ag electrodes are arranged on both sides of the c-axis inclined direction of the substrate to form an ohmic contact, which is derived from the Ag lead and connected to the signal input end. Since the element is used for deep ultraviolet monochromatic ligh...

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Abstract

The invention relates to a GaN-based photothermal detection thin film element. The thin film element comprises a single crystal substrate, [p-GaN / n-GaN]N superlattice, a metal electrode, a lead, an absorption layer, an antireflective protective layer, thermal conductive adhesive and a heat sink, wherein the single crystal substrate is (001) oriented and beveled along an axis c, the [p-GaN / n-GaN]Nsuperlattice alternately epitaxially grows on the single crystal susbtrate, stops at a p-GaN surface and etches a trapezoid table, the metal electrode is arranged at two sides of the [p-GaN / n-GaN]N superlattice and the single crystal substrate in an inclination direction of the axis c so as to form ohmic contact, the metal electrode is led out by the lead and is connected with a signal input end,the absorption layer covers an effective detection surface of the [p-GaN / n-GaN]N superlattice, the antireflective protective layer convers the absorption layer, and the heat sink is connected and fixed with the single crystal substrate through the thermal conductive adhesive. The thin film detection element is small, has high sensitivity and large damage threshold, responds rapidly, can be produced in large scale, and realizes both wide-spectrum detection and thermal radiation detection.

Description

technical field [0001] The invention relates to a GaN-based photothermal detection thin film element, which belongs to the field of functional thin film materials and devices. Background technique [0002] The photothermal detection thin film device based on off-diagonal element Seebeck effect, through the tilt design of the film epitaxial orientation, the off-diagonal element of the material Seebeck coefficient tensor is not zero, so that the direction of the response electric field and the temperature gradient are perpendicular to each other. The relative independence of thermal and electrical transport dimensions enables it to obtain real and sensitive photo-thermal-electrical response signals in nanoscale single-layer films, and it also includes multiple physical mechanisms such as photoconductive effect and lateral Dandelion effect. . Compared with traditional devices, this type of thin-film device has the advantages of fast response speed (ns order), no need for power...

Claims

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Application Information

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IPC IPC(8): G01J5/20
CPCG01J5/20
Inventor 宋世金朱刘狄聚青
Owner 昆明先导新材料科技有限责任公司
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