GaN-based photothermal detection thin film element

A thin-film element and photothermal detection technology, which is applied in the direction of electric radiation detectors, can solve the problems of high-power continuous photothermal detection requiring refrigeration, thermal radiation detection wavelength range is narrow, and it is difficult to mass-produce, achieving good linearity, The effect of wide wavelength range and fast response speed

Active Publication Date: 2020-02-07
昆明先导新材料科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Due to the limitations of the current material system, single crystal substrate selection and preparation process, photothermal detection thin film devices based on the off-diagonal element Seebeck effect are difficult to mass-produce, high-power co

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  • GaN-based photothermal detection thin film element
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  • GaN-based photothermal detection thin film element

Examples

Experimental program
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Example Embodiment

[0025] Example 1

[0026] A GaN-based photothermal detection thin film element is used for continuous infrared thermal radiation detection of 0.8 to 12 μm, and the structure is as follows figure 1 As shown, the thin film element structure includes: a single crystal substrate 1, [p-GaN / n-GaN] N Superlattice 2, metal electrode 3, absorption layer 4, anti-reflection protective layer 5, lead 6, thermally conductive adhesive 7, heat sink 8. The single crystal substrate is a 5° chamfered semi-insulating GaN (0001) substrate with a room temperature resistivity of 1.0E+7Ω·cm and a thickness of 0.2mm. [p-GaN / n-GaN] N The superlattice was alternately epitaxially grown on a 5° chamfered semi-insulating GaN (0001) substrate by MOCVD, with the p-GaN surface cut off and the trapezoidal mesa etched along the [p-GaN / n-GaN] NA pair of Au electrodes are arranged on both sides of the c-axis inclination direction of the superlattice and GaN (0001) substrate to form an ohmic contact, which is d...

Example Embodiment

[0029] Example 2

[0030] A GaN-based photothermal detection thin film element is used for continuous light radiation detection of 0.35-0.8 μm. The structure of the thin film element includes: a single crystal substrate, [p-GaN / n-GaN] N Superlattices, metal electrodes, absorber layers, anti-reflection protection layers, leads, thermally conductive pastes and heat sinks. The single crystal substrate is a 20° chamfered semi-insulating SiC (0001) substrate with a room temperature resistivity of 2.0E+7Ω·cm and a thickness of 0.4mm. [p-GaN / n-GaN] N The superlattice was alternately epitaxially grown on a 20° chamfered semi-insulating SiC (0001) substrate by MOCVD method, and the trapezoidal mesa was cut off with the p-GaN surface and etched along the [p-GaN / n-GaN] N A pair of Ti / Al / Pt / Au composite electrodes are arranged on both sides of the c-axis inclination direction of the superlattice and SiC (0001) substrate to form an ohmic contact, which is led out by Cu leads and connecte...

Example Embodiment

[0033] Example 3

[0034] A GaN-based photothermal detection thin film element is used for 365nm monochromatic pulse laser detection. The structure of the thin film element includes: a single crystal substrate, [p-GaN / n-GaN] N Superlattices, metal electrodes, absorbing layers, anti-reflection protective layers, leads, thermally conductive adhesives, heat sinks. The single crystal substrate is 45° chamfered insulating Al 2 O 3 (0001) substrate, the room temperature resistivity is 1.0E+8Ω·cm, and the thickness is 0.8mm. [p-GaN / n-GaN] N Alternate epitaxial growth of superlattices by MOCVD on 45° chamfered insulating Al 2 O 3 On the (0001) substrate, the p-GaN surface is cut off and the trapezoidal mesa is etched, along the [p-GaN / n-GaN] N Superlattices and Al 2 O 3 (0001) A pair of Ag electrodes are arranged on both sides of the c-axis inclination direction of the substrate to form an ohmic contact, which is led out by the Ag lead and connected to the signal input end. T...

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Abstract

The invention relates to a GaN-based photothermal detection thin film element. The thin film element comprises a single crystal substrate, [p-GaN/n-GaN]N superlattice, a metal electrode, a lead, an absorption layer, an antireflective protective layer, thermal conductive adhesive and a heat sink, wherein the single crystal substrate is (001) oriented and beveled along an axis c, the [p-GaN/n-GaN]Nsuperlattice alternately epitaxially grows on the single crystal susbtrate, stops at a p-GaN surface and etches a trapezoid table, the metal electrode is arranged at two sides of the [p-GaN/n-GaN]N superlattice and the single crystal substrate in an inclination direction of the axis c so as to form ohmic contact, the metal electrode is led out by the lead and is connected with a signal input end,the absorption layer covers an effective detection surface of the [p-GaN/n-GaN]N superlattice, the antireflective protective layer convers the absorption layer, and the heat sink is connected and fixed with the single crystal substrate through the thermal conductive adhesive. The thin film detection element is small, has high sensitivity and large damage threshold, responds rapidly, can be produced in large scale, and realizes both wide-spectrum detection and thermal radiation detection.

Description

technical field [0001] The invention relates to a GaN-based photothermal detection thin film element, which belongs to the field of functional thin film materials and devices. Background technique [0002] The photothermal detection thin film device based on off-diagonal element Seebeck effect, through the tilt design of the film epitaxial orientation, the off-diagonal element of the material Seebeck coefficient tensor is not zero, so that the direction of the response electric field and the temperature gradient are perpendicular to each other. The relative independence of thermal and electrical transport dimensions enables it to obtain real and sensitive photo-thermal-electrical response signals in nanoscale single-layer films, and it also includes multiple physical mechanisms such as photoconductive effect and lateral Dandelion effect. . Compared with traditional devices, this type of thin-film device has the advantages of fast response speed (ns order), no need for power...

Claims

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Application Information

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IPC IPC(8): G01J5/20
CPCG01J5/20
Inventor 宋世金朱刘狄聚青
Owner 昆明先导新材料科技有限责任公司
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