DLC/CNx/MeN/CNx nano-multilayer film and preparation method thereof
A nano-multi-layer and nano-composite technology, which is applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of poor bonding strength and decreased wear resistance, and achieve reduced internal stress, low cost, The effect that the process conditions are easy to control
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Embodiment 1
[0044] (1) Substrate pretreatment: put the high-speed steel substrate into acetone and absolute ethanol and ultrasonically clean it for 20 minutes each to remove surface oil stains, dry it after cleaning and install it on the sample stage;
[0045] (2) Experiment preparation: put the graphite target, metal target and pretreated high-speed steel substrate into the deposition chamber of the vacuum coating machine, adjust the distance between the target material and the sample stage to 60 mm, and pump the air pressure in the deposition chamber to 1.0×10 -3 After Pa, heat the high-speed steel to stabilize the temperature at 200°C;
[0046] (3) Deposition of Cr metal transition layer: Pass high-purity argon gas into the deposition chamber, control the flow rate of argon gas to stabilize the pressure in the vacuum chamber at 0.8Pa, select Cr as the metal transition layer, and adjust the power of the pure metal Cr target to 80W , plus a negative bias of 200V, deposit a pure metal Cr...
Embodiment 2
[0054] (1) substrate pretreatment: with embodiment 1;
[0055] (2) Experimental preparation: with embodiment 1;
[0056] (3) Deposition of Ti transition layer: Introduce high-purity argon into the deposition chamber, control the flow of argon to stabilize the pressure in the vacuum chamber at 0.8Pa; adjust the power of the pure metal Ti target to 80W, plus a negative bias of 200V , deposit a pure metal Ti layer on the rotating sample stage, and the deposition time is 10min;
[0057] (4) Preparation of DLC / CNx / TiN / CNx nano-multilayer film:
[0058] a) Pass high-purity argon gas into the deposition chamber, and stabilize the pressure in the chamber at 0.8Pa, deposit a DLC layer on the Ti transition layer with a graphite target sputtering power of 60W and a negative bias voltage of 100V for 36min;
[0059] c) Deposit the first gradient CNx layer on the DLC layer with a graphite target sputtering power of 55W and a negative bias voltage of 100V, and gradually introduce high-puri...
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