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a kind of in 2 o 3 Particle/in 2 o 3 Synthetic method of nanoribbons and products obtained therefrom

A synthesis method and nanobelt technology, which are applied in the fields of gallium/indium/thallium compounds, nanotechnology, nanotechnology, etc., can solve the problems of complex chemical kinetic reactions, achieve good morphology uniformity and repeatability, and can achieve product size. Tone, component design novel effect

Active Publication Date: 2022-03-22
UNIV OF JINAN
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  • Application Information

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Problems solved by technology

However, by rationally designing the reaction system and heat treatment system of the precursor, the electrospinning method was used to synthesize In 2 o 3 Particles / In 2 o 3 Reports on the hierarchical structure of nanoribbons are not yet common, mainly because the chemical kinetics are too complex at high temperature

Method used

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  • a kind of in <sub>2</sub> o <sub>3</sub> Particle/in <sub>2</sub> o <sub>3</sub> Synthetic method of nanoribbons and products obtained therefrom
  • a kind of in <sub>2</sub> o <sub>3</sub> Particle/in <sub>2</sub> o <sub>3</sub> Synthetic method of nanoribbons and products obtained therefrom
  • a kind of in <sub>2</sub> o <sub>3</sub> Particle/in <sub>2</sub> o <sub>3</sub> Synthetic method of nanoribbons and products obtained therefrom

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1.1 Mix 0.0058 g of ethyl cellulose, 0.0022 g of dicyandiamide, 0.4514 g of indium chloride (InCl 3 ) and 0.7026 g of PVP were dissolved in a mixed solvent consisting of 4 mL of DMF, 1 mL of ethanol and 20 μL of 1,3,5-trimethylbenzene, and stirred until transparent to obtain a precursor spinning solution;

[0026] 1.2 The precursor fiber was obtained by electrospinning the precursor spinning solution. The spinning parameters were as follows: positive voltage 18KV, negative voltage 0.5 KV, receiving distance 18 cm, and injector advance speed 0.002 mm / s;

[0027] 1.3 Place the precursor fiber in the muffle furnace, raise the temperature from room temperature to 500 °C at a rate of 2 °C / min in the air atmosphere, and keep it warm for 2 h. After the sample is cooled with the furnace, In 2 o 3 Particles / In 2 o 3 nanobelt.

[0028] The XRD result of the product is as follows Figure 1 As shown, it can be seen from the figure that all the diffraction peaks are consistent ...

Embodiment 2

[0030] 2.1 Mix 0.0168 g of dicyandiamide, 0.0201 g of ethyl cellulose, and 0.3611 g of InCl 3 and 0.5427 g of PVP were dissolved in a mixed solvent composed of 4 mL of DMF, 1 mL of ethanol and 15 μL of 1,3,5-trimethylbenzene, and stirred until transparent to obtain a precursor spinning solution;

[0031] 2.2 The precursor fiber was obtained by electrospinning the precursor spinning solution. The spinning parameters were: positive voltage 17KV, negative voltage 0.5 KV, receiving distance 17 cm, and injector advance speed 0.001 mm / s.

[0032] 2.3 Place the precursor fiber in the muffle furnace, raise the temperature from room temperature to 550 °C at a rate of 3 °C / min in the air atmosphere, and keep it for 3 h. After the sample is cooled with the furnace, In 2 o 3 Particles / In 2 o 3 nanobelt. Among them, In 2 o 3 The average diameter of the nanoribbons is 450-480 nm, the average thickness is 45-50 nm, In 2 o 3 The average size of the particles is 0.8-0.9 μm.

Embodiment 3

[0034] 3.1 Mix 0.0140 g of ethyl cellulose, 0.0038 g of dicyandiamide, and 0.6432 g of InCl 3 and 1.1098 g of PVP were dissolved in a mixed solvent composed of 4 mL of DMF, 1 mL of ethanol and 20 μL of 1,3,5-trimethylbenzene, and stirred until transparent to obtain a precursor spinning solution;

[0035] 3.2 The precursor fiber was obtained by electrospinning the precursor spinning solution. The spinning parameters were: positive voltage 17KV, negative voltage 0.5 KV, receiving distance 17 cm, and advancing speed 0.003 mm / s;

[0036] 3.3 Place the obtained precursor fiber in a muffle furnace, raise the temperature from room temperature to 550 °C at a rate of 2 °C / min in an air atmosphere, and keep it for 4 h. After the sample is cooled with the furnace, In 2 o 3 Particles / In 2 o 3 nanobelt. Among them, In 2 o 3 The average diameter of the nanoribbons is 410-440 nm, the average thickness is 38-43 nm, In 2 o 3 The average size of the particles is 0.6-0.8 μm.

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Abstract

The invention discloses an In 2 o 3 Particles / In 2 o 3 The preparation method and the obtained product of the nanoribbon multi-level structure, the steps include: adding indium salt, dicyandiamide, ethyl cellulose, and PVP to the mixed solution of ethanol, 1,3,5 trimethylbenzene and DMF and stirring until transparent, The spinning solution is obtained, and a precursor fiber is formed by electrospinning; the obtained precursor fiber is calcined in an air atmosphere to obtain a product. The precursor reaction system designed by the present invention is novel, the electrospinning process is easy to operate, the reaction system is stable and the process parameters can be adjusted, and the shape of In 2 o 3 The multi-level structure has good repeatability and dispersion, is suitable for industrial production, and will play an important role in the field of gas sensing applications.

Description

technical field [0001] The present invention relates to an In 2 o 3 Particles / In 2 o 3 The synthetic method of nanoribbon, specifically relates to a kind of surface in situ growth In 2 o 3 Granular In 2 o 3 Electrospinning synthesis method of nanoribbons and products obtained therefrom. Background technique [0002] Fe 2 o 3 、In 2 o 3 、Co 3 o 4 , SnO 2 Such metal semiconductor oxides have been made into gas-sensitive materials, which can show good gas response performance to different types of toxic, harmful, flammable and explosive gases such as sulfides, nitrogen oxides, benzene and their derivatives, and are widely used In industrial testing, food safety, environmental monitoring and other fields. Metal semiconductor oxides have the advantages of high temperature resistance, corrosion resistance, good stability and good response to gases. Therefore, research around metal-semiconductor oxides has attracted more and more attention. [0003] In 2 o 3 It is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00D01F9/10B82Y30/00B82Y40/00
CPCC01G15/00D01F9/10B82Y40/00B82Y30/00C01P2004/17C01P2004/61C01P2004/62C01P2002/72C01P2004/03
Inventor 马谦李行褚姝姝郭嘉李绘林紫琼张琪王懿杨萍
Owner UNIV OF JINAN
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