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Efficient FOLED and preparation method thereof

A high-efficiency, hole-injecting layer technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of poor bending durability and low luminous efficiency, and achieve the best performance.

Inactive Publication Date: 2020-02-14
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a high-efficiency FOLED and its preparation method to solve the problems of low luminous efficiency and poor bending durability of the device proposed in the above-mentioned background technology

Method used

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  • Efficient FOLED and preparation method thereof
  • Efficient FOLED and preparation method thereof
  • Efficient FOLED and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] see figure 2 , the present invention provides a technical solution: a high-efficiency FOLED, including a PET flexible substrate 1, a glass substrate 2 containing an ITO anode, and a KNO hole injection layer 3 stacked on the glass substrate 2, a hole transport layer 4, a super Thin light-emitting layer 5, electron transport layer 6, electron injection layer 7 and cathode 8, the specific steps of the high-efficiency FOLED preparation method are as follows:

[0024] First, the surface of the glass substrate 2 containing the ITO anode was treated by ultrasonic cleaning in neutral detergent / deionized (DI) water, deionized water, acetone and isopropanol for 25 minutes, and then in deionized water. A short final rinse, and finally dry the cleaned substrate with nitrogen, and then treat it with UV-ozone for 20 minutes, put the cleaned glass substrate 2 into the vacuum chamber of the organic and metal deposition system, during the evaporation process, the test chamber The pres...

Embodiment 2

[0033] A kind of efficient FOLED preparation method, its structure is similar to embodiment 1, and the method steps are as follows:

[0034] (1) The surface treatment of the ITO glass substrate 2 is the same as in Example 1.

[0035] (2) KNO preparation is the same as in Example 1.

[0036] (3) Evaporate a hole injection layer on the glass substrate 2, the material is KNO, and the thickness is 1 nm.

[0037] (4) The hole transport layer 4 is evaporated on the KNO hole injection layer 3 , the material is NPB, and the thickness is 60 nm.

[0038] (5) On the hole transport layer 4, the ultra-thin light-emitting layer 5 is evaporated, and the material is Alq3:DCJTB, 4-(dicyanomethyl)-2-tert-butyl-6-(1,1,7,7 - Tetramethyljuronidinyl-4-vinyl)-4H-pyran (DCJTB) doped at a concentration of about 3.5 wt%, with a thickness of 30 nm.

[0039] (6) Evaporating an electron transport layer 6 on the ultra-thin light-emitting layer 5, the material is TPBi, and the thickness is 10 nm.

[004...

Embodiment 3

[0043] A kind of efficient FOLED preparation method, its structure is similar to embodiment 1, and the method steps are as follows:

[0044] (1) The surface treatment of the ITO glass substrate 2 is the same as in Example 1.

[0045] (2) KNO preparation is the same as in Example 1.

[0046] (3) Evaporate a hole injection layer on the glass substrate 2, the material is KNO, and the thickness is 1 nm.

[0047] (4) The hole transport layer 4 is evaporated on the KNO hole injection layer 3 , the material is NPB, and the thickness is 60 nm.

[0048] (5) On the hole transport layer 4, the ultra-thin light-emitting layer 5 is evaporated, and the material is TCTA:Ir(PIQ) 2 (ACAC), two (1-phenyl-isoquinoline) (acetylacetonate) iridium (III ) (Ir(PIQ)2(ACAC)) with a doping concentration of about 8wt% and a thickness of 30nm.

[0049] (6) Evaporating an electron transport layer 6 on the ultra-thin light-emitting layer 5, the material is TPBi, and the thickness is 10 nm.

[0050] (7) ...

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Abstract

The invention discloses an efficient FOLED and a preparation method thereof. The efficient FOLED comprises a PET substrate, an ITO substrate, and a hole injection layer, a hole transport layer, an ultrathin light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are stacked on a buffer layer in sequence. The hole injection layer is made of K-doped NiO (KNO). The hole transport layer is made of NPB, and the thickness is 60nm. The ultrathin light-emitting layer is made of CBP: 4CzIPN, the doping concentration is about 5 wt%, and the thickness is 30nm. The electron transport layer is made of TPBi, and the thickness is 10nm. The electron injection layer is made of LiF, and the thickness is 1nm. The material of the cathode is high-purity metal Al, andthe thickness of the cathode is 100nm. The K-doped NiO powder is prepared by sintering 1273K in air for 4h. The K-doped NiO film of the efficient FOLED is smoother than an ITO film, the contact performance is better, the hole injection efficiency is improved, and the work function of the anode is enhanced. The thickness of the hole transport layer and the thickness of the electron transport layerare most suitable after balance in the aspects of brightness and bending durability at present, and the FOLED design can achieve the optimal performance.

Description

technical field [0001] The invention belongs to the technical field of organic electroluminescent devices, in particular to a high-efficiency FOLED and a preparation method thereof. Background technique [0002] Flexible organic light-emitting diodes (FOLEDs) have the advantages of high efficiency, low cost, high resolution, low energy consumption, flexible display, and large-area fabrication, and have broad application prospects in the fields of display and solid-state lighting. [0003] Among the photoelectric performance indicators of FOLEDs, luminous efficiency is one of the key technical parameters to evaluate whether it can be commercially applied. In order to reduce energy consumption and improve luminous efficiency, the driving voltage of the device should be as low as possible. Studies have shown that electrodes and organic electrodes The interface between layers plays a vital role in the efficiency of OLEDs. Currently, ITO is commonly used as the anode substrate fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/15H10K50/16H10K50/17H10K50/171H10K50/11H10K2102/311
Inventor 陈亮雒玉蓉金尚忠徐时清沈洋张淑琴黄帅方强龙何坤杨茹张振
Owner CHINA JILIANG UNIV
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