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High efficiency back surface electrode-type solar cell and manufacturing method therefor

A technology for solar cells and manufacturing methods, applied in the directions of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of increased contact resistance between p-type silicon and electrodes, and achieve low resistance loss, cheap and simple resistance loss , The effect of low wiring resistance

Active Publication Date: 2020-02-14
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, in practice, if the above-mentioned general silver paste is applied equally to p-type silicon and n-type silicon, the contact resistance between p-type silicon and the electrode will increase in many cases.

Method used

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  • High efficiency back surface electrode-type solar cell and manufacturing method therefor
  • High efficiency back surface electrode-type solar cell and manufacturing method therefor
  • High efficiency back surface electrode-type solar cell and manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] Initially, in a phosphorus-doped n-type as-cut silicon substrate with a square thickness of 150 mm, a thickness of 200 μm, and a resistivity of 1 Ω·cm, the damaged layer was removed by heating concentrated potassium hydroxide solution, and then heated in 5% potassium hydroxide at 80 ° C. Immerse in the solution for 20 minutes to form an irregular pyramid-like texture, and then wash in a hydrochloric acid / hydrogen peroxide mixed solution.

[0076] Next, the mixture of boron compound and binder is spin-coated on the back of the substrate, and boron is diffused by heat treatment at 1000°C for 30 minutes to form a p-type region, and then oxidation heat treatment is continued at 1000°C for 2 hours.

[0077] After the heat treatment, the oxide film at the position where the n-type region is formed on the rear surface of the substrate is removed linearly by irradiation with laser light having a wavelength of 532 nm.

[0078] Next, a set of two substrates with their light recei...

Embodiment 2

[0085] Operate with the same procedure as in Example 1 until a passivation film and an anti-reflection film are formed. On the obtained crystalline silicon substrate, by screen printing, mix a mixture of aluminum powder and glass frit and an organic binder to obtain The aluminum paste is coated on the p-type region and dried at 200°C for 1 minute.

[0086] Next, by screen printing, a silver paste to which no group III elements were added was applied to the dry body of the n-type region and the aluminum paste formed on the p-type region, dried at 200°C for 1 minute, and then subjected to 800°C, 3 The second heat treatment sinters the silver paste to obtain solar cells.

[0087] Finally, the output characteristics of the solar cell were measured using simulated sunlight of a xenon lamp light source type.

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Abstract

The present invention is a rear-surface-electrode-type solar cell in which a first main surface of a crystalline silicon substrate has a p-type region that has p-type electrical conductivity, and an n-type region that has n-type electrical conductivity, the rear-surface-electrode-type solar cell comprising a positive electrode that is formed on the p-type region and a negative electrode that is formed on the n-type region, wherein the solar cell is characterized in that: the positive electrode comprises a laminated electrical conductor made from a first electrical conductor that is formed on the p-type region and contains a group III element, and a second electrical conductor that is laminated on the first electrical conductor, the group III element content being less than that of the first electrical conductor; and the negative electrode comprises a second electrical conductor that is formed on the n-type region. Thereby provided is an inexpensive rear surface electrode-type solar cell that has high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a high-efficiency back electrode type solar cell and a manufacturing method thereof. Background technique [0002] As a method of improving the photoelectric conversion efficiency of crystalline silicon solar cells, so-called back electrode type solar cells in which the electrodes on the light-receiving surface are eliminated to eliminate optical loss due to electrode shadows have been extensively studied in recent years. [0003] Image 6 It is a schematic diagram showing the basic structure of a general back electrode type solar cell. In addition, the light receiving surface is shown facing downward in the same figure. Such as Image 6 As shown, in the back electrode type solar cell 601, a p-type region 603 in which a group III element such as boron or aluminum is diffused at a high concentration is formed on the non-light-receiving surface of the substrate 602, and a p-type region 603 in which a group III element such as bo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18
CPCH01L31/0224H01L31/068Y02E10/547H01L31/022425H01L31/022441Y02E10/544Y02P70/50H01L31/03046H01L31/02167H01L31/1868H01L31/0516H01L31/0682H01L31/186
Inventor 桥上洋渡部武纪大塚宽之
Owner SHIN ETSU CHEM IND CO LTD
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