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Diamond field effect transistor based on Al2O3/SiNx double-layer gate medium and preparation method of diamond field effect transistor

A field-effect transistor and diamond technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of poor dielectric quality, limiting the characteristics and stability of diamond electronic devices, and low gate electrode withstand voltage of devices. The effect of large output current, improved concentration and stability, and high saturation output current

Inactive Publication Date: 2020-02-21
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method uses low temperature grown Al 2 o 3 As a medium, the surface of the hydrogen-terminated diamond is protected, and a large current is realized, but the Al grown at a low temperature by this method 2 o 3 The poor quality of the dielectric makes the gate electrode of the device have a low withstand voltage, which limits the characteristics and stability of the diamond electronic device

Method used

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  • Diamond field effect transistor based on Al2O3/SiNx double-layer gate medium and preparation method of diamond field effect transistor
  • Diamond field effect transistor based on Al2O3/SiNx double-layer gate medium and preparation method of diamond field effect transistor
  • Diamond field effect transistor based on Al2O3/SiNx double-layer gate medium and preparation method of diamond field effect transistor

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Effect test

Embodiment 1

[0054] See figure 1 , figure 1 It is an Al-based 2 o 3 / SiN x Flowchart of the method for preparing a diamond field effect transistor with a double-layer gate dielectric. The preparation method of the present embodiment comprises:

[0055] S1: select the diamond substrate;

[0056] S2: growing a hydrogen terminal adsorption layer on the upper surface of the diamond substrate;

[0057] S3: growing a source electrode and a drain electrode on the upper surface of the hydrogen terminal adsorption layer;

[0058] S4: growing Al on the upper surface of the source electrode, the upper surface of the drain electrode, and the upper surface of the hydrogen terminal adsorption layer between the source electrode and the drain electrode 2 o 3 material, forming the first dielectric layer;

[0059] S5: growing SiN on the upper surface of the first dielectric layer x material, forming the second dielectric layer;

[0060] S6: grow a gate electrode on the upper surface of the second...

Embodiment 2

[0084] On the basis of the above-mentioned embodiments, the present embodiment takes the substrate as single crystal diamond, Al 2 o 3 / SiN x Taking a diamond field effect transistor with a double-layer gate dielectric thickness of 30 nm as an example, the preparation method of the embodiment of the present invention will be described in detail. See Figure 2a-Figure 2f as well as image 3 and Figure 4 , Figure 2a-Figure 2f It is an Al-based 2 o 3 / SiN x Schematic diagram of the preparation process of a diamond field effect transistor with a double-layer gate dielectric, image 3 is a schematic structural diagram of a first mask provided by an embodiment of the present invention; Figure 4 is a schematic structural diagram of a second mask provided by an embodiment of the present invention.

[0085] The preparation method of the present embodiment comprises:

[0086] Step 1: Select a single crystal diamond substrate 1 .

[0087] A single crystal diamond with a th...

Embodiment 3

[0104] On the basis of the above-mentioned embodiments, the present embodiment takes the substrate as polycrystalline diamond, Al 2 o 3 / SiN x Taking a diamond field effect transistor with a total thickness of a double-layer gate dielectric of 50 nm as an example, the preparation method of the embodiment of the present invention will be described in detail.

[0105] refer again Figure 2a to Figure 2f , the preparation method of the present embodiment comprises:

[0106] Step 1: Select a polycrystalline diamond substrate 1 .

[0107] Polycrystalline diamond with a thickness of 1 mm was selected as the substrate.

[0108] Step 2: forming a hydrogen terminal adsorption layer 2 on the upper surface of the diamond substrate 1 .

[0109] Specifically, the single crystal diamond 1 substrate is placed in the reaction chamber of MPCVD, and hydrogen gas with a flow rate of 800 sccm is introduced to form a hydrogen plasma; the pressure in the reaction chamber is 800 mbar, the react...

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Abstract

The invention relates to a diamond field effect transistor based on an Al2O3 / SiNx double-layer gate medium and a preparation method of the diamond field effect transistor. The method comprises steps of selecting a diamond substrate; growing a hydrogen terminal adsorption layer on an upper surface of the diamond substrate; growing a source electrode and a drain electrode on an upper surface of thehydrogen terminal adsorption layer; growing an Al2O3 material on an upper surface of the source electrode, an upper surface of the drain electrode and the upper surface of the hydrogen terminal adsorption layer between the source electrode and the drain electrode to form a first dielectric layer; growing a SiNx material on an upper surface of the first dielectric layer to form a second dielectriclayer; and growing a gate electrode on an upper surface of the second dielectric layer. The method is advantaged in that an Al2O3 / SiNx double-layer structure is adopted as a gate medium, a layer of SiNx medium is deposited above a thin layer of Al2O3 medium, so gate capacitance can be reduced, the frequency characteristic of the device can be improved, the passivation effect can be achieved, and stability of the device can be remarkably enhanced.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to an Al-based 2 o 3 / SiNx double-layer gate dielectric diamond field effect transistor and its preparation method. Background technique [0002] Diamond is a wide bandgap semiconductor material with a large band gap (5.47eV), high thermal conductivity (>20W / (cm K)), high breakdown electric field and high carrier mobility (holes are 3800cm 2 / (V s), the electron is 4500cm 2 / (V s)) and other excellent physical properties, these properties determine that diamond devices can work in high temperature, high pressure, and high radiation environments, and have great application potential in high pressure, high power, and extreme environments. [0003] The mainstream structure of diamond electronic devices is field-effect transistors. In order to overcome the limitations of immature diamond doping technology in the application of diamond electronic devices, it is pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/51H01L29/423
CPCH01L29/42364H01L29/512H01L29/517H01L29/518H01L29/66568H01L29/78
Inventor 袁冠生任泽阳张金风陈万娇苏凯张进成郝跃
Owner XIDIAN UNIV
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